ABA-32563-TR1G

Agilent ABA-32563 2.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Features • Operating Frequency DC ~ 2.5 GHz • 19 dB Gain • VSWR < 2.0 throughout operating frequency • 8.4 dBm Output P1dB Description Agilent’s ABA-32563 is an economical, easy-to-use, internally 50Ω matched, silicon monolithic broadband amplifier that offers excellent gain and broadband response from DC to 2.5 GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package. At 2 GHz, the ABA-32563 offers a small-signal gain of 19 dB, output P1dB of 8.4 dBm and 19.5 dBm output third order intercept point. It is suitable for use as wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communication systems. ABA-32563 is fabricated using Agilent’s HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package SOT-363/SC70 • 19.5 dBm Output IP3 • 3.5 dB Noise Figure • Unconditionally Stable • Single 3V Supply (Id = 37 mA) • Lead-free Applications • Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner Applications Pin Connections and Package Marking GND 1 Output & Vcc 2Kx GND 2 Input GND 3 Vcc Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. Note: Top View. Package marking provides orientation and identification. “x” is the date code. Simplified Schematic Vcc RF Output & Vcc RF Input Ground 2 Ground 3 Ground 1 ABA-32563 Absolute Maximum Ratings [1] Symbol Vcc Pin Pdiss Tj TSTG Parameter Device Voltage, RF output to ground (T = 25°C) CW RF Input Power (Vcc = 3V) Total Power Dissipation [3] Junction Temperature Storage Temperature Units V dBm W °C °C Absolute Max. 6 15 0.6 150 -65 to 150 Thermal Resistance[2] (Vcc = 3V) θj-c = 124.3°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tc, is 25°C. Derate 8.1 mW/°C for Tc > 120.8°C. Electrical Specifications Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise. Symbol Gp[1] ∆Gp NF[1] P1dB[1] OIP3[1] VSWRin[1] VSWRout Icc[1] Td[1] [1] Parameter and Test Condition Power Gain (|S21|2 ) Power Gain Flatness, Noise Figure Output Power at 1dB Gain Compression Output Third Order Intercept Point Input VSWR Output VSWR Device Current Group Delay f = 0.1 ~ 1.5 GHz f = 0.1 ~ 2.5 GHz Units dB dB dB dBm dBm Min. 17.5 Typ. 19.0 1.0 3.0 3.5 8.4 19.5