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AT-31011-TR1

AT-31011-TR1

  • 厂商:

    HP

  • 封装:

  • 描述:

    AT-31011-TR1 - Low Current, High Performance NPN Silicon Bipolar Transistor - Agilent(Hewlett-Packar...

  • 数据手册
  • 价格&库存
AT-31011-TR1 数据手册
Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-143 SMT Plastic Package • Tape-And-Reel Packaging Option Available[1] Description Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz Outline Drawing EMITTER COLLECTOR battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-ScientificMedical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. 310 BASE EMITTER SOT-143 (AT-31011) COLLECTOR 310 BASE EMITTER SOT-23 (AT-31033) Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices” 4-33 5965-8919E AT-31011, AT-31033 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation[2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 11 5.5 16 150 150 -65 to 150 Thermal Resistance[2]: θjc = 550°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/ °C for TC > 67.5°C. Electrical Specifications, TA = 25°C AT-31011 Symbol NF GA hFE ICBO IEBO Parameters and Test Conditions Noise Figure VCE = 2.7 V, IC = 1 mA Associated Gain VCE = 2.7 V, IC = 1 mA Forward Current Transfer Ratio Collector Cutoff Current Emitter Cutoff Current f = 0.9 GHz f = 0.9 GHz VCE = 2.7 V IC = 1 mA VCB = 3 V VEB = 1 V Units dB dB µA µA 11[1] 70 0.05 0.1 Min Typ 0.9[1] 13[1] 300 0.2 1.5 Max 1.2[1] 9[2] 70 0.05 0.1 Min AT-31033 Typ Max 0.9[2] 1.2[2] 11[2] 300 0.2 1.5 Notes: 1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB. 2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.4 dB; output loss = 0.4 dB. VBB W = 10 L = 1860 1000 pF W = 10 L = 1000 W = 30 L = 100 VCC W = 10 L = 1860 25 Ω 1000 pF W = 10 L = 1025 W = 30 L = 100 TEST CIRCUIT BOARD MATL = 0.062" FR-4 (ε = 4.8) DIMENSIONS IN MILS TEST CIRCUIT A: W = 20 L = 100 TEST CIRCUIT B: W = 20 L = 200 x 2 NOT TO SCALE Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310 Geometries. 4-34 Characterization Information, TA = 25° C AT-31011 AT-31033 Symbol P1dB G1dB IP3 |S21|E2 CCB Parameters and Test Conditions Power at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 10 mA Gain at 1 dB Gain Compression (opt tuning) VCE = 2.7 V, IC = 10 mA Output Third Order Intercept Point, VCE = 2.7 V, IC = 10 mA (opt tuning) Gain in 50 Ω System; VCE = 2.7 V, IC = 1 mA Collector-Base Capacitance f = 0.9 GHz f = 0.9 GHz f = 0.9 GHz f = 0.9 GHz VCB = 3V, f = 1 MHz Units dBm dB dBm dB pF Typ 9 15 20 10 0.04 Typ 9 13 20 9 0.04 2.5 AMPLIFIER NF 2 NOISE FIGURE (dB) 25 25 20 10 mA 20 10 mA Ga (dB) 1 NF MIN. 1 mA 10 mA 1 mA 10 Ga (dB) 1.5 15 15 10 1 mA 0.5 5 5 0 0 0.5 1 1.5 2 2.5 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. AT-31011 and AT-31033 Minimum Noise Figure and Amplifier NF[1] vs. Frequency and Current at VCE = 2.7 V. 10 10 mA 8 Figure 3. AT-31011 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. Figure 4. AT-31033 Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. 20 16 16 G 1dB (dB) 12 P 1dB (dBm) 6 12 G 1dB (dB) 5 mA 8 4 2 mA 2 2 mA 5 mA 10 mA 0 0.5 1.0 1.5 2.0 2.5 8 2 mA 5 mA 10 mA 0 0.5 1.0 1.5 2.0 2.5 4 2 mA 5 mA 10 mA 0 0 0.5 1.0 1.5 2.0 2.5 4 0 0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. AT-31011 and AT-31033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 2.7 V. Figure 6. AT-31011 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. Figure 7. AT-31033 1 dB Compressed Gain vs. Frequency and Current at VCE = 2.7 V. Note: 1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including circuit losses. 4-35 AT-31011, AT-31033 Typical Performance 15 20 20 12 10 mA P 1dB (dBm) 16 16 G 1dB (dB) 2 mA 5 mA 10 mA 0 0.5 1.0 1.5 2.0 2.5 9 5 mA G 1dB (dB) 12 12 6 2 mA 3 2 mA 5 mA 10 mA 0 0.5 1.0 1.5 2.0 2.5 8 8 2 mA 5 mA 10 mA 0 0.5 1.0 1.5 2.0 2.5 4 4 0 0 0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 8. AT-31011 and AT-31033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 5 V. Figure 9. AT-31011 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. Figure 10. AT-31033 1 dB Compressed Gain vs. Frequency and Current at VCE = 5 V. 4 20 20 5 mA 2 P 1dB (dBm) 16 5 mA G 1dB (dB) 16 5 mA G 1dB (dB) 12 2 mA 8 12 0 2 mA -2 8 2 mA 4 4 -4 0 0.5 1.0 1.5 2.0 2.5 0 0 0.5 1.0 1.5 2.0 2.5 0 0 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 11. AT-31011 and AT-31033 Power at 1 dB Gain Compression vs. Frequency and Current at VCE = 1 V. Figure 12. AT-31011 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. Figure 13. AT-31033 1 dB Compressed Gain vs. Frequency and Current at VCE = 1 V. 25 2.5 25 2.5 0 IM3 (dBc) IM5 (dBc) IM7 (dBc) 20 Ga Ga (dBm) 2.0 NOISE FIGURE (dB) 20 2.0 Ga (dBm) IM3 (dBc) 15 1.5 15 Ga 10 NF 5 1.5 NOISE FIGURE (dB) -20 -40 10 NF 5 1.0 1.0 0.5 -60 0.5 -80 -9 0 -50 0 50 0 100 0 -50 0 50 0 100 -6 -3 0 3 6 TEMPERATURE (°C) TEMPERATURE (°C) POWER PER TONE (dBm) Figure 14. AT-31011 Noise Figure and Associated Gain at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) Figure 15. AT-31033 Noise Figure and Associated Gain at VCE = 2.7 V, IC = 1 mA vs. Temperature in Test Circuit, Figure 1. (Circuit Losses De-embedded) Figure 16. AT-31011 and AT-31033 Intermodulation Products vs. Output Power at VCE = 2.7 V, I C = 10 mA, 900 MHz with Optimal Tuning. 4-36 AT-31011 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.95 0.92 0.81 0.79 0.66 0.60 0.57 0.51 0.45 0.45 0.49 S11 Ang -8 -34 -60 -66 -94 -110 -119 -139 -167 153 120 dB 11.12 10.58 9.74 9.33 8.02 7.18 6.76 5.56 4.22 2.30 0.73 S21 Mag 3.60 3.38 3.07 2.93 2.52 2.28 2.18 1.90 1.63 1.30 1.09 Ang 174 150 130 125 104 93 87 74 57 36 17 dB -37.91 -24.67 -20.67 -20.03 -18.34 -17.95 -17.73 -17.69 -17.95 -18.33 -17.33 S12 Mag 0.01 0.06 0.09 0.10 0.12 0.13 0.13 0.13 0.13 0.12 0.14 30 Ang 85 68 53 50 36 30 27 22 19 22 32 Mag 0.999 0.94 0.89 0.88 0.80 0.76 0.74 0.71 0.67 0.64 0.62 S22 Ang -3 -15 -25 -27 -36 -40 -42 -46 -51 -62 -72 AT-31011 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.90 0.85 0.68 0.55 GAIN (dB) ΓOPT Ang 13 29 67 98 Rn 0.85 0.73 0.46 0.28 20 MSG 10 MAG S21 Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 17. AT-31011 Gains vs. Frequency at VCE = 1 V, IC = 1 mA. AT-31033 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.94 0.87 0.70 0.66 0.46 0.36 0.31 0.22 0.16 0.23 0.33 S11 Ang -7 -34 -58 -64 -90 -106 -117 -143 166 101 67 dB 11.16 10.37 9.17 8.69 7.11 6.16 5.66 4.48 3.19 1.39 0.05 S21 Mag 3.61 3.30 2.87 2.72 2.27 2.03 1.92 1.67 1.44 1.17 1.01 Ang 173 144 121 115 92 81 74 62 46 25 9 dB -35.95 -22.84 -19.06 -18.49 -16.94 -16.40 -16.06 -15.50 -14.34 -11.85 -9.11 S12 Mag 0.02 0.07 0.11 0.12 0.14 0.15 0.16 0.17 0.19 0.26 0.35 30 Ang 85 68 56 53 45 43 42 42 44 46 41 Mag 0.999 0.92 0.85 0.83 0.74 0.70 0.68 0.66 0.63 0.60 0.56 S22 Ang -3 -17 -27 -29 -37 -40 -42 -45 -50 -62 -77 AT-31033 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.90 0.82 0.57 0.41 ΓOPT Ang 12 28 68 100 0.70 0.60 0.38 0.22 Rn 20 GAIN (dB) MSG 10 MAG S21 0 0 1 2 3 4 MSG 5 Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. FREQUENCY (GHz) 4-37 Figure 18. AT-31033 Gains vs. Frequency at VCE = 1 V, IC = 1 mA. AT-31011 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.96 0.93 0.83 0.81 0.68 0.62 0.58 0.52 0.45 0.43 0.46 S11 Ang -7 -32 -56 -61 -89 -104 -113 -133 -160 158 123 dB 11.11 10.66 9.90 9.53 8.32 7.52 7.15 5.98 4.65 2.75 1.16 S21 Mag 3.59 3.41 3.13 2.99 2.61 2.38 2.28 1.99 1.71 1.37 1.14 Ang 174 152 132 128 107 96 90 77 61 39 20 dB -39.92 -26.43 -22.32 -21.66 -19.90 -19.46 -19.24 -19.15 -19.37 -19.60 -18.16 S12 Mag 0.01 0.05 0.08 0.08 0.10 0.11 0.11 0.11 0.11 0.10 0.12 30 Ang 86 69 55 53 40 34 31 27 25 29 41 Mag 0.999 0.95 0.91 0.90 0.84 0.80 0.78 0.75 0.72 0.69 0.68 S22 Ang -2 -13 -22 -24 -32 -36 -38 -42 -46 -56 -66 AT-31011 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.92 0.85 0.68 0.55 Rn Ang 13 29 67 98 0.85 0.73 0.46 0.28 GAIN (dB) ΓOPT 20 MSG 10 S21 MAG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 19. AT-31011 Gains vs. Frequency at VCE = 2.7 V, IC = 1 mA. AT-31033 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.94 0.89 0.72 0.69 0.48 0.38 0.33 0.23 0.14 0.19 0.30 S11 Ang -7 -32 -54 -59 -83 -97 -107 -130 -178 103 67 dB 11.07 10.35 9.27 8.80 7.32 6.39 5.91 4.73 3.43 1.62 0.25 S21 Mag 3.58 3.29 2.91 2.76 2.32 2.09 1.97 1.72 1.48 1.21 1.03 Ang 173 146 123 118 95 84 77 65 49 28 12 dB -37.44 -24.11 -20.27 -19.65 -18.01 -17.43 -17.07 -16.46 -15.25 -12.62 -9.72 S12 Mag 0.01 0.06 0.10 0.10 0.13 0.13 0.14 0.15 0.17 0.23 0.33 30 Ang 86 70 58 56 48 46 45 46 48 51 47 Mag 0.999 0.94 0.87 0.86 0.78 0.74 0.72 0.70 0.67 0.65 0.63 S22 Ang -3 -15 -25 -26 -33 -36 -38 -41 -46 -57 -71 AT-31033 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.90 0.82 0.57 0.41 ΓOPT Ang 12 28 68 100 0.70 0.60 0.38 0.22 Rn 20 GAIN (dB) MSG 10 MAG S21 0 0 1 2 3 4 MSG 5 Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. FREQUENCY (GHz) 4-38 Figure 20. AT-31033 Gains vs. Frequency at VCE = 2 .7 V, IC = 1 mA. AT-31011 Typical Scattering Parameters, VCE = 2.7 V, IC = 10 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.74 0.46 0.32 0.30 0.25 0.25 0.24 0.25 0.27 0.31 0.37 S11 Ang -23 -85 -121 -128 -161 -177 174 157 138 113 94 dB 27.42 22.65 18.73 17.91 14.77 13.29 12.42 10.97 9.11 6.86 5.19 S21 Mag 23.49 13.57 8.64 7.86 5.48 4.62 4.18 3.54 2.86 2.20 1.82 Ang 161 116 97 93 79 72 68 60 49 33 17 dB -41.00 -30.64 -27.55 -27.05 -24.48 -23.26 -22.51 -21.12 -19.31 -16.88 -14.75 S12 Mag 0.01 0.03 0.04 0.04 0.06 0.07 0.07 0.09 0.11 0.14 0.18 30 Ang 77 59 59 59 61 61 61 59 58 54 48 Mag 0.95 0.68 0.59 0.58 0.55 0.54 0.53 0.53 0.52 0.51 0.50 S22 Ang -9 -24 -27 -27 -30 -32 -33 -36 -40 -50 -59 AT-31011 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 10 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 1.3 1.4 1.7 2.0 Mag 0.45 0.37 0.25 0.18 MSG ΓOPT Ang 11 33 86 129 GAIN (dB) Rn 0.55 0.46 0.29 0.18 20 MAG 10 S21 MSG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 21. AT-31011 Gains vs. Frequency at VCE = 2.7 V, IC = 10 mA. AT-31033 Typical Scattering Parameters, VCE = 2.7 V, IC = 10 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.72 0.33 0.19 0.17 0.11 0.10 0.10 0.10 0.12 0.15 0.20 S11 Ang -21 -49 -47 -46 -28 -14 -6 9 23 34 36 dB 26.80 19.93 15.51 14.66 11.44 9.99 9.15 7.78 6.16 4.30 3.01 S21 Mag 21.87 9.92 5.96 5.41 3.73 3.16 2.87 2.45 2.03 1.64 1.41 Ang 154 106 88 85 72 66 62 54 43 27 12 dB -38.46 -27.31 -22.90 -22.03 -18.74 -17.26 -16.40 -14.88 -12.99 -10.49 -8.53 S12 Mag 0.01 0.04 0.07 0.08 0.12 0.14 0.15 0.18 0.22 0.30 0.37 30 MSG MAG Ang 80 73 72 72 69 67 65 62 57 48 38 Mag 0.92 0.66 0.61 0.60 0.59 0.58 0.58 0.57 0.55 0.52 0.48 S22 Ang -10 -20 -22 -23 -27 -30 -32 -35 -41 -53 -65 AT-31033 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 2.7 V, IC = 10 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 1.3 1.4 1.7 2.0 Mag 0.42 0.31 0.16 0.08 ΓOPT Ang 10 30 80 118 0.38 0.34 0.23 0.17 Rn 20 GAIN (dB) MSG MAG 10 S21 MSG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) 4-39 Figure 22. AT-31033 Gains vs. Frequency at VCE = 2.7 V, IC = 10 mA. AT-31011 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.96 0.94 0.83 0.81 0.68 0.62 0.58 0.52 0.44 0.42 0.45 S11 Ang -7 -31 -54 -60 -86 -101 -110 -129 -157 161 125 dB 11.10 10.67 9.93 9.57 8.41 7.62 7.27 6.10 4.78 2.90 1.33 S21 Mag 3.59 3.41 3.14 3.01 2.63 2.40 2.31 2.02 1.73 1.40 1.17 Ang 174 153 133 129 108 97 91 78 62 40 21 dB -40.35 -26.95 -22.80 -22.18 -20.33 -19.85 -19.64 -19.50 -19.68 -19.86 -18.35 S12 Mag 0.01 0.04 0.07 0.08 0.10 0.10 0.10 0.11 0.10 0.10 0.12 30 Ang 84 69 56 53 41 35 32 28 26 31 43 Mag 0.999 0.96 0.92 0.91 0.85 0.81 0.79 0.76 0.73 0.70 0.70 S22 Ang -2 -13 -22 -23 -31 -35 -37 -41 -45 -55 -65 AT-31011 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.92 0.85 0.68 0.55 GAIN (dB) ΓOPT Ang 13 29 67 98 Rn 0.85 0.73 0.46 0.28 20 MSG 10 S21 MAG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 23. AT-31011 Gains vs. Frequency at VCE = 5 V, IC = 1 mA. AT-31033 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.95 0.89 0.73 0.70 0.49 0.39 0.34 0.23 0.13 0.17 0.28 S11 Ang -7 -31 -52 -57 -80 -93 -102 -122 -166 107 68 dB 10.93 10.24 9.20 8.75 7.30 6.41 5.93 4.77 3.49 1.71 0.32 S21 Mag 3.52 3.25 2.88 2.74 2.32 2.09 1.98 1.73 1.49 1.22 1.04 Ang 173 147 124 119 96 85 78 66 50 29 12 dB -37.78 -24.43 -20.49 -19.91 -18.15 -17.54 -17.19 -16.55 -15.35 -12.83 -9.96 S12 Mag 0.01 0.06 0.09 0.10 0.12 0.13 0.14 0.15 0.17 0.23 0.32 30 Ang 85 70 59 57 49 47 46 46 49 51 48 Mag 0.999 0.94 0.88 0.87 0.79 0.75 0.73 0.71 0.68 0.66 0.64 S22 Ang -3 -15 -24 -26 -32 -36 -37 -40 -45 -56 -69 AT-31033 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 0.5 0.6 1.1 1.6 Mag 0.90 0.82 0.57 0.41 ΓOPT Ang 12 28 68 100 0.70 0.60 0.38 0.22 Rn 20 GAIN (dB) MSG 10 MAG S21 0 0 1 2 3 4 MSG 5 Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. FREQUENCY (GHz) 4-40 Figure 24. AT-31033 Gains vs. Frequency at VCE = 5 V, IC = 1 mA. AT-31011 Typical Scattering Parameters, VCE = 5 V, IC = 10 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.77 0.48 0.32 0.30 0.23 0.22 0.21 0.21 0.23 0.27 0.33 S11 Ang -21 -77 -112 -119 -151 -168 -178 163 142 116 96 dB 27.41 22.97 19.14 18.34 15.23 13.75 12.91 11.46 9.60 7.36 5.70 S21 Mag 23.46 14.07 9.06 8.26 5.78 4.87 4.42 3.74 3.02 2.33 1.93 Ang 162 118 98 95 80 73 69 61 50 34 19 dB -41.49 -30.66 -27.77 -27.11 -24.56 -23.37 -22.62 -21.25 -19.45 -17.08 -14.97 S12 Mag 0.01 0.03 0.04 0.04 0.06 0.07 0.07 0.09 0.11 0.14 0.18 30 Ang 80 61 59 60 60 60 60 59 58 54 48 Mag 0.95 0.70 0.61 0.59 0.56 0.55 0.55 0.54 0.53 0.52 0.51 S22 Ang -8 -24 -27 -27 -29 -31 -32 -36 -39 -48 -58 AT-31011 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 10 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 1.3 1.4 1.7 2.0 Mag 0.45 0.37 0.25 0.18 MSG GAIN (dB) ΓOPT Ang 11 33 86 129 Rn 0.55 0.46 0.29 0.18 20 MAG S21 10 MSG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) Figure 25. AT-31011 Gains vs. Frequency at VCE = 5 V, IC = 10 mA. AT-31033 Typical Scattering Parameters, VCE = 5 V, IC = 10 mA, Common Emitter, ZO = 50 Ω Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 Mag 0.75 0.37 0.23 0.21 0.15 0.14 0.13 0.13 0.13 0.14 0.18 S11 Ang -19 -45 -42 -42 -30 -21 -17 -7 3 19 28 dB 26.79 20.17 15.79 14.94 11.75 10.30 9.47 8.08 6.47 4.61 3.33 S21 Mag 21.84 10.20 6.16 5.58 3.87 3.27 2.97 2.54 2.11 1.7 1.47 Ang 155 107 90 86 73 67 63 55 45 29 14 dB -38.82 -27.39 -23.00 -22.11 -18.86 -17.37 -16.51 -15.00 -13.14 -10.67 -8.73 S12 Mag 0.01 0.04 0.07 0.08 0.11 0.14 0.15 0.18 0.22 0.29 0.37 30 Ang 79 73 72 72 69 66 65 62 57 48 38 Mag 0.92 0.67 0.62 0.61 0.60 0.59 0.58 0.57 0.56 0.53 0.49 S22 Ang -10 -20 -22 -23 -27 -29 -31 -35 -41 -52 -64 AT-31033 Typical Noise Parameters, Common Emitter, ZO = 50 Ω, 5 V, IC = 10 mA Freq GHz 0.5[2] 0.9 1.8 2.4 Fmin[1] dB 1.3 1.4 1.7 2.0 Mag 0.42 0.31 0.16 0.08 GAIN (dB) ΓOPT Ang 10 30 80 118 20 MSG Rn 0.38 0.34 0.23 0.17 MAG 10 S21 MSG Notes: 1. Matching constraints may make Fmin values associated with high |ΓOPT| values unacheivable in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured. 0 0 1 2 3 4 5 FREQUENCY (GHz) 4-41 Figure 26. AT-31033 Gains vs. Frequency at VCE = 5 V, IC = 10 mA. Ordering Information Part Number AT-31011-BLK AT-31011-TR1 AT-31033-BLK AT-31033-TR1 Increment 100 3000 100 3000 Comments Bulk 7" Reel Bulk 7" Reel Package Dimensions SOT-23 Plastic Package 1.02 (0.040) 0.89 (0.035) 0.54 (0.021) 0.37 (0.015) C PACKAGE MARKING CODE B 0.60 (0.024) 0.45 (0.018) 1.40 (0.055) 1.20 (0.047) E 2.65 (0.104) 2.10 (0.083) XXX 2.04 (0.080) 1.78 (0.070) TOP VIEW 3.06 (0.120) 2.80 (0.110) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) SIDE VIEW 0.152 (0.006) 0.066 (0.003) 0.69 (0.027) 0.45 (0.018) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) SOT-143 Plastic Package 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE E C XXX B E 0.54 (0.021) 0.37 (0.015) 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 0.15 (0.006) 0.09 (0.003) 1.02 (0.041) 0.85 (0.033) 0.10 (0.004) 0.013 (0.0005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.018) 4-42
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