AT-38086-TR1

4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed (pulse width = 577 µsec, duty cycle = 12.5%)/CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout @ 836.5 MHz, Typ. • 60% Pulsed Collector Efficiency @ 900 MHz, Typ. • 11 dB Pulsed Power Gain @ 900 MHz, Typ. • -35 dBc IMD3 @ Pout of 17 dBm per tone, 900 MHz, Typ. 85 mil Plastic Surface Mount Package Outline 86 Description Hewlett Packard’s AT-38086 is a low cost, NPN silicon bipolar junction transistor housed in a surface mount plastic package. This device is designed for use as a pre-driver or driver device in applications for cellular and wireless communications markets. At 4.8 volts, the AT-38086 features +28 dBm pulsed output power, Class AB operation, and +23.5 dBm CW. Superior efficiency and gain makes the AT-38086 an excellent choice for battery powered systems. The AT-38086 is fabricated with Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices. Pin Configuration 4 EMITTER 1 BASE 2 EMITTER 3 COLLECTOR Applications • Driver Amplifier for GSM and AMPS/ETACS/ 900 MHz NMT Cellular Phones • 900 MHz ISM and Special Mobile Radio 4-89 5965-5959E AT-38086 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC IC PT PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current [2] Collector Current [3] Peak Power Dissipation [2, 4] CW Power Dissipation [3, 5] Junction Temperature Storage Temperature Units V V V mA mA W mW °C °C Absolute Maximum[1] 1.4 16.0 9.5 250 160 3.7 460 150 -65 to 150 Thermal Resistance [6]: θjc = 140°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%. 3. CW operation. 4. Derate at 57.1 mW/°C for TC > 85 °C. TC is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 5. Derate at 7.1 mW/°C for TC > 85 °C. TC is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 6. Using the liquid crystal technique, VCE = 4.5 V, Ic = 50 mA, Tj =150°C, 1-2 µm “hot-spot” resolution. Electrical Specifications, TC = 25°C Symbol Parameters and Test Conditions Freq. = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, Pulse width = 577 µsec, duty cycle = 12.5%, unless otherwise specified Pout ηC Output Power, Pulsed Operation[1] Collector Efficiency, Pulsed Operation[1] Mismatch Tolerance No Damage, Pulsed[1] Pout IMD3 Output Power, CW Operation[2] Test Circuit A, Pin = +17 dBm Test Circuit A, Pin = +17 dBm Test Circuit A, Pout = +28 dBm, any phase, 2 sec duration F = 836.5 MHz, ICQ = 15 mA Test Circuit B, Pin = +10 dBm dBm dBc +22.0 +23.5 -35 7:1 dBm % +26.5 50 +28.0 60 7:1 Units Min. Typ. Max. 3rd Order Intermodulation Distortion, F1 = 899 MHz, F2 = 901 MHz 2-Tone Test, Pout each tone = +17 dBm, CW [2,3] ICQ = 15 mA, Test Circuit B Mismatch Tolerance, No Damage, CW[2] F = 836.5 MHz, ICQ = 15 mA Test Circuit B, Pout = +23.5 dBm any phase, 2 sec duration IE = 0.2 mA, open collector IC = 1.0 mA, open emitter IC = 3.0 mA, open base VCE = 3 V, IC = 160 mA VCEO = 5 V BVEBO BVCBO BVCEO hFE ICEO Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Forward Current Transfer Ratio Collector Leakage Current V V V — µA 1.4 16.0 9.5 40 150 330 15 Notes: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM). 2. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit B (AMPS). 4-90 3. Test circuit B re-tuned at 900 MHz. AT-38086 Typical Performance, TC = 25°C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, pulsed operation, pulse width = 577 µsec, duty cycle = 12.5%, Test Circuit A (GSM), unless otherwise specified 32 30 OUTPUT POWER (dBm) COLLECTOR EFFICIENCY (%) COLLECTOR EFFICIENCY (%) Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 100 90 80 70 32 30 OUTPUT POWER (dBm) Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 90 80 70 60 50 40 30 20 10 0 2 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 28 26 24 22 20 18 16 14 12 2 4 6 Pout 28 26 24 22 20 18 16 14 12 2 4 6 8 10 12 14 16 18 20 22 24 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V 60 50 ηc 40 30 20 10 3.6 V 4.8 V 6.0 V 4 6 8 10 12 14 16 18 20 22 24 INPUT POWER (dBm) 0 8 10 12 14 16 18 20 22 24 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. Figure 2. Output Power vs. Input Power Over Bias Voltage. Pin = +17 dBm Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 32 30 28 26 24 22 20 10 OUTPUT POWER (dBm) OUTPUT POWER (dBm) 28.6 28.4 28.2 28.0 27.8 27.6 27.4 27.2 Pout 71 COLLECTOR EFFICIENCY (%) Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 29.0 28.8 Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 75 0 -2 RETURN LOSS (dB) Γ source = 0.75 ∠ -177 Γ load = 0.48 ∠ +161 -4 -6 -8 -10 -12 Input R.L. -14 -16 800 850 900 950 1000 Output R.L. 67 ηc 63 TC = +85°C TC = +25°C TC = –40°C 12 14 16 18 20 22 24 59 27.0 880 890 900 910 55 920 INPUT POWER (dBm) FREQUENCY (MHz) FREQUENCY (MHz) Figure 4. Output Power vs. Input Power Over Temperature. Figure 5. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 900 MHz, then Swept over Frequency. Figure 6. Input and Output Return Loss vs. Frequency. 4-91 AT-38086 Typical Performance, TC = 25°C Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B (AMPS), unless otherwise specified 28 26 COLLECTOR EFFICIENCY (%) 80 70 60 27 COLLECTOR EFFICIENCY (%) Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 Pout 90 29 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 90 80 70 60 50 40 30 20 10 2 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 OUTPUT POWER (dBm) 24 22 20 18 16 14 2 4 OUTPUT POWER (dBm) 25 23 21 19 17 15 2 4 6 8 10 12 14 16 17 INPUT POWER (dBm) 3.6 V 4.8 V 6.0 V ηc 50 40 30 20 16 17 3.6 V 4.8 V 6.0 V 4 6 8 10 12 14 16 17 6 8 10 12 14 INPUT POWER (dBm) INPUT POWER (dBm) Figure 7. Output Power and Collector Efficiency vs. Input Power. Figure 8. Output Power vs. Input Power Over Bias Voltage. Figure 9. Collector Efficiency vs. Input Power Over Bias Voltage. 28 26 Γ source = 0.86 ∠ -180 Γ load = 0.46 ∠ +128 RETURN LOSS (dB) Γ source = 0.86 ∠ -180 -2 Γ load = 0.46 ∠ +128 -4 -6 -8 -10 Input R.L. -12 -14 750 Output R.L. 0 0 -5 -10 Γ source = 0.87 ∠ -178 Γ load = 0.48 ∠ +126 OUTPUT POWER (dBm) 24 22 20 18 16 14 2 4 6 8 TC = +85°C TC = +25°C TC = –40°C 10 12 14 16 17 -15 IMD (dBc) -20 -25 -30 -35 -40 -45 IMD5 IMD3 800 836.5 850 900 950 -50 5 7 9 11 13 15 17 19 21 22 OUTPUT POWER/TONE (dBm) INPUT POWER (dBm) FREQUENCY (MHz) Figure 10. Output Power vs. Input Power Over Temperature. Figure 11. Input and Output Return Loss vs. Frequency. Figure 12. IMD3, IMD5 vs. Output Power Per Tone. Note: Test circuit B (AMPS) used and re-tuned at 900 MHz. 4-92 AT-38086 Typical Large Signal Impedances (GSM) Freq. = 900 MHz, VCE = 4.8 V, ICQ = 20 mA, Pulsed Operation, Pout = +28.0 dBm Γ source Γ load Freq. MHz Mag. Ang. Mag. Ang. 880 0.743 -175.6 0.474 162.0 890 0.741 -176.4 0.476 161.5 900 0.747 -177.3 0.478 161.2 910 0.751 -178.1 0.481 160.0 915 0.752 -178.6 0.482 159.6 920 0.754 -179.1 0.483 158.9 3.5 3.3 3.1 2.9 Ccb (pF) 2.7 2.5 2.3 2.1 1.9 1.7 1.5 0 1 2 3 4 5 6 7 8 9 Vcb (V) AT-38086 Typical Large Signal Impedances (AMPS) Freq. = 836.5 MHz, VCE = 4.8 V, ICQ = 15 mA, CW Operation, Pout = +23.5 dBm Γ source Γ load Freq. MHz Mag. Ang. Mag. Ang. 824 0.856 -178.9 0.455 129.1 836.5 0.864 -179.9 0.459 128.2 849 0.870 -179.1 0.464 127.3 Figure 13. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model CPad C CPad B CPad Packaged Model Cbc L1 B Lb B E1 E2 C L3 C Die Area = 0.67 CPad = 0.36 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 Cbe E1 Label NR TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB RE RC Value 0.9886 1E-9 1.11 3.598E-15 3 1.02 pF 0.4276 0.2508 0.001 0.999 0.98 pF 0.811 0.596 5.435 1.30 0.01 E2 Le Cce L2 E Label Cbe Cbc Cce L1 L2 L3 Lb Le Value 0.032 pF 0.036 pF 0.122 pF 0.46 nH 0.46 nH 0.46 nH 0.47 nH 0.14 nH 4-93 AT-38086 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω VCE = 3.6 V, Ic = 50 mA, Tc = 25°C Freq. S11 GHz Mag. Ang. dB 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0.71 0.73 0.75 0.76 0.76 0.77 0.77 0.78 0.78 0.79 0.80 0.80 0.81 0.81 0.82 0.72 0.73 0.75 0.75 0.76 0.76 0.76 0.77 0.78 0.78 0.79 0.80 0.80 0.81 0.82 0.73 0.74 0.74 0.75 0.75 0.76 0.76 0.77 0.77 0.78 0.79 0.79 0.80 0.81 0.81 -85 -124 -160 -176 175 171 169 164 160 156 152 148 145 142 139 -82 -121 -158 -176 176 172 169 164 160 156 152 149 145 142 139 -79 -119 -157 -175 176 172 170 165 160 156 152 149 146 142 139 S21 Mag. 38.52 25.72 11.66 5.95 3.98 3.32 2.99 2.39 1.99 1.71 1.49 1.33 1.19 1.08 0.99 39.02 26.32 12.00 6.14 4.10 3.42 3.08 2.46 2.05 1.76 1.54 1.37 1.23 1.12 1.02 39.07 26.60 12.21 6.25 4.18 3.48 3.13 2.51 2.09 1.79 1.56 1.39 1.25 1.13 1.03 Ang. 138 118 84 76 72 69 63 57 51 46 41 37 32 28 25 139 119 97 85 76 72 69 63 57 51 46 41 37 32 28 140 120 98 85 76 72 69 63 57 51 46 41 37 32 28 dB -31.7 -29.1 -27.3 -25.5 -23.6 -22.6 -22.0 -20.5 -19.3 -18.3 -17.3 -16.4 -15.7 -15.0 -14.4 -31.7 -29.1 -27.3 -25.5 -23.7 -22.7 -22.0 -20.6 -19.4 -18.3 -17.4 -16.5 -15.8 -15.0 -14.4 -32.0 -29.1 -27.3 -25.5 -23.7 -22.7 -22.2 -20.7 -19.5 -18.4 -17.5 -16.6 -15.8 -15.1 -14.5 S12 Mag. 0.026 0.035 0.043 0.053 0.066 0.074 0.079 0.094 0.108 0.122 0.137 0.151 0.164 0.178 0.191 0.026 0.035 0.043 0.053 0.065 0.073 0.079 0.093 0.107 0.121 0.135 0.150 0.163 0.177 0.190 0.025 0.035 0.043 0.053 0.065 0.073 0.078 0.092 0.106 0.120 0.134 0.148 0.162 0.175 0.188 S22 Ang. 54 39 35 43 50 52 54 56 57 57 57 57 56 55 54 54 40 35 43 49 52 53 56 57 58 57 57 56 55 55 55 40 35 42 49 52 53 56 57 57 58 57 56 56 55 Mag. 0.75 0.56 0.39 0.36 0.36 0.36 0.37 0.38 0.40 0.41 0.43 0.45 0.47 0.49 0.51 0.76 0.56 0.38 0.35 0.35 0.35 0.36 0.37 0.38 0.40 0.42 0.44 0.46 0.48 0.50 0.76 0.56 0.38 0.34 0.34 0.34 0.34 0.36 0.37 0.39 0.41 0.43 0.45 0.47 0.49 Ang. -57 -90 -133 -155 -165 -168 -170 -174 -176 -179 179 176 174 172 169 -55 -87 -130 -154 -163 -167 -169 -172 -175 -178 180 177 175 173 170 -54 -85 -128 -152 -162 -166 -167 -171 -174 -177 -179 178 176 174 171 31.7 28.2 21.3 15.5 12.0 10.4 9.5 7.6 6.0 4.7 3.5 2.5 1.5 0.7 -0.1 31.8 28.4 21.6 15.8 12.3 10.7 9.8 7.8 6.2 4.9 3.8 2.7 1.8 1.0 0.2 31.8 28.5 21.7 15.9 12.4 10.8 9.9 8.0 6.4 5.1 3.9 2.9 1.9 1.1 0.3 VCE = 4.8 V, Ic = 50 mA, Tc = 25°C VCE = 6.0 V, Ic = 50 mA, Tc = 25°C 4-94 Typical Performance 35 30 25 MSG 35 MSG 30 25 30 25 MAG MSG 35 GAIN (dB) GAIN (dB) 20 15 10 5 GAIN (dB) 20 15 10 5 0 |S21|2 MAG 20 15 10 5 |S21|2 MAG |S21|2 -5 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 FREQUENCY (GHz) 0 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 FREQUENCY (GHz) 0 0.05 0.25 0.75 1.00 1.50 2.00 2.50 3.00 FREQUENCY (GHz) Figure 14. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6V, Ic = 50 mA. Figure 15. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8V, Ic = 50 mA. Figure 16. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 6.0V, Ic = 50 mA. Part Number Ordering Information Part Number AT-38086-TR1 AT-38086-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag Package Dimensions Outline 86 0.51 ± 0.13 (0.020 ± 0.005) 4 45° 1 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.203 ± 0.051 (0.006 ± 0.002) 1.52 ± 0.25 (0.060 ± 0.010) 0.66 ± 0.013 (0.026 ± 0.005) 0.30 MIN (0.012 MIN) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-95 Test Circuit A: Test Circuit Board Layout @ 900 MHz for Pulsed Operation (GSM) VBB VBB R2 T1 R1 C2 C3 L1 R3 C5 L2 R5 C6 C8 C9 9/96 VCC VCC C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 pF 100.0 nF 8.2 pF 100.0 nF 100.0 pF 3.6 pF 1.5 µF 10.0 µF 100.0 pF 10.0 Ω 619.0 Ω 10.0 Ω 40.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 38.1 (1.5) R4 C1 C4 C7 C10 INPUT PA1 DEMO 76.2 (3.0) B–MFG0139 OUTPUT Pulse Test VCE = 4.8 V ICQ = 20 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz for Pulsed Operation (GSM) VBB Pulse Test VCE = 4.8 V ICQ = 20 mA Freq. = 900 MHz VCC 10 Ω B DC C E Transistor 619 Ω 100 nF 10 Ω 100 pF 80 Ω λ/4 @ 900 MHz 10 Ω 100 pF 80 Ω λ/4 @ 900 MHz 50 Ω = 19.00 (.748) 3.6 pF 100 pF RF OUT 100 nF 1.5 µF 10 µF 18 µH 18 µH 100 pF RF IN 8.2 pF 50 Ω 40 Ω = 6.53 (.257) 4-96 Test Circuit B: Test Circuit Board Layout @ 836.5 MHz for CW Operation (AMPS) VBB VBB R2 R1 T1 R3 C4 C5 C2 L1 R5 C6 L2 C7 C8 9/96 VCC VCC C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 100.0 pF 100.0 nF 11.0 pF 100.0 pF 100.0 pF 100.0 nF 1.5 µF 10.0 µF 4.7 pF 100.0 pF 10.0 Ω 619.0 Ω 10.0 Ω 40.0 Ω 10.0 Ω MBT 2222A 18.0 µH 18.0 µH 38.1 (1.5) R4 C1 C3 C9 C10 INPUT PA1 DEMO 76.2 (3.0) B–MFG0139 OUTPUT CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 836.5 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit B: Test Circuit Schematic Diagram @ 836.5 MHz for CW Operation (AMPS) VBB CW Test VCE = 4.8 V ICQ = 15 mA Freq. = 836.5 MHz VCC 10 Ω B DC C E Transistor 619 Ω 100 nF 10 Ω 100 pF 80 Ω λ/4 @ 836.5 MHz 10 Ω 100 pF 80 Ω 100 nF 1.5 µF 10 µF 18 µH 18 µH λ/4 @ 836.5 MHz 50 Ω = 32.66 (1.286) 4.7 pF 100 pF RF OUT 100 pF RF IN 11.0 pF 50 Ω 40 Ω = 9.02 (.355) 4-97 Tape Dimensions and Product Orientation for Outline 86 REEL 1 12 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE NOTE: 1 INDICATES PIN 1 ORIENTATION P0 t COVER TAPE A KC B D0 P2 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 MM E F W USER FEED DIRECTION T P1 D1 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION SYMBOL A B K P1 D1 D0 P0 E W t C T F P2 SIZE (mm) 5.77 ± 0.10 6.10 ± 0.10 1.70 ± 0.10 8.00 ± 0.10 1.50 min. SIZE (INCHES) 0.227 ± 0.004 0.240 ± 0.004 0.067 ± 0.004 0.314 ± 0.004 0.059 min. PERFORATION 1.50 + 0.10/-0.05 0.059 + 0.004/-0.002 0.157 ± 0.004 4.00 ± 0.10 0.069 ± 0.004 1.75 ± 0.10 12.00 ± 0.20 0.30 ± 0.05 9.30 ± 0.10 0.065 ± 0.010 5.50 ± 0.05 2.00 ± 0.05 0.472 ± 0.008 0.012 ± 0.002 0.366 ± 0.004 0.0026 ± 0.0004 0.217 ± 0.002 0.079 ± 0.002 CARRIER TAPE WIDTH THICKNESS COVER TAPE DISTANCE BETWEEN CENTERLINE WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) 4-98