AT-42000

Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz Typical fT This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, “Chip Use”. Chip Outline Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. 4-149 5965-8909E AT-42000 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 20 12 80 600 200 -65 to 200 Thermal Resistance [2,4]: θjc = 70°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25°C. 3. Derate at 14.3 mW/°C for TMounting Surface > 158°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number AT-42000-GP4 Devices Per Tray 100 Electrical Specifications, TA = 25°C Symbol |S21E|2 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions[1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz — µA µA pF 30 Min. Typ. Max. 11.5 5.5 21.0 20.5 15.0 10.0 1.9 3.0 14.0 10.5 9.0 150 270 0.2 2.0 0.23 Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer . 2. For this test, the emitter is grounded. 4-150 AT-42000 Typical Performance, TA = 25°C 24 P1 dB (dBm) 2.0 GHz 24 P1 dB (dBm) 10 V 6V 20 1.0 GHz 20 16 12 P1dB 20 4.0 GHz P1dB 2.0 GHz 16 |S21E|2 GAIN (dB) 4V 16 12 2.0 GHz 12 G1 dB (dB) G1 dB (dB) G1dB 16 4.0 GHz 10 V 6V 4V G1dB 8 8 14 12 10 0 10 20 30 IC (mA) 40 4 4.0 GHz 4 0 10 20 30 IC (mA) 40 50 50 0 0 10 20 30 IC (mA) 40 50 Figure 1. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. Figure 3. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 13 12 |S21E|2 GAIN (dB) 40 35 10 V 24 21 GA MSG 30 GAIN (dB) 18 GAIN (dB) 11 10 9 8 7 0 10 20 30 IC (mA) 40 6V 4V 25 20 15 10 5 0 MAG |S21E|2 15 12 9 6 3 NFO 4 3 2 1 1.0 2.0 0 3.0 4.0 5.0 NFO (dB) 50 0.1 0.3 0.5 1.0 3.0 6.0 0 0.5 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Insertion Power Gain vs. Collector Current and Voltage. f = 2.0 GHz. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 6. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-151 AT-42000 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .70 -50 28.0 25.19 155 0.5 .67 -136 20.9 11.04 108 1.0 .66 -166 15.7 6.08 90 1.5 .66 -173 12.1 4.02 86 2.0 .66 179 9.8 3.09 82 2.5 .67 170 7.8 2.46 74 3.0 .67 165 6.3 2.08 68 3.5 .70 157 5.1 1.80 61 4.0 .70 151 3.9 1.56 57 4.5 .71 145 2.9 1.40 51 5.0 .73 138 1.9 1.24 41 5.5 .74 132 1.2 1.15 36 6.0 .76 129 0.2 1.02 32 dB -37.7 -30.5 -28.9 -28.2 -27.5 -26.0 -24.7 -23.4 -21.8 -20.7 -19.3 -17.2 -16.3 S12 Mag. .013 .030 .036 .039 .042 .050 .058 .068 .081 .092 .109 .138 .154 S22 Ang. 71 43 47 52 57 66 72 77 82 86 87 88 87 Mag. .92 .57 .50 .48 .47 .47 .47 .47 .48 .50 .51 .51 .53 Ang. -14 -27 -24 -23 -23 -23 -26 -28 -30 -34 -38 -50 -56 AT-42000 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .49 -96 33.0 44.61 143 0.5 .62 -163 22.8 13.87 98 1.0 .63 179 17.2 7.25 86 1.5 .63 171 13.5 4.74 78 2.0 .65 163 11.2 3.62 72 2.5 .65 159 9.3 2.90 67 3.0 .68 154 7.8 2.44 60 3.5 .67 148 6.5 2.12 57 4.0 .69 144 5.3 1.83 51 4.5 .70 139 4.4 1.65 47 5.0 .70 137 3.3 1.46 43 5.5 .72 131 2.7 1.36 38 6.0 .74 128 1.7 1.22 34 A model for this device is available in the DEVICE MODELS section. dB -40.9 -34.4 -30.5 -27.7 -25.4 -23.6 -22.1 -20.6 -19.7 -18.3 -17.5 -16.5 -15.7 S12 Mag. .009 .019 .030 .041 .054 .066 .079 .093 .104 .121 .133 .149 .164 S22 Ang. 65 58 70 76 79 82 82 84 86 86 85 86 85 Mag. .79 .42 .38 .38 .38 .38 .38 .39 .40 .41 .42 .41 .44 Ang. -24 -26 -22 -23 -25 -27 -29 -32 -34 -40 -44 -48 -55 AT-42000 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.5 1.9 3.0 Γopt Mag .04 .05 .09 .23 .47 Ang 13 69 127 171 -154 RN/50 0.13 0.13 0.12 0.11 0.14 4-152 AT-42000 Chip Dimensions 30 µm DIA 1.18 mil Base Pad 90 µm 3.54 mil 305 µm 12 mil Emitter Pad 305 µm 12 mil Note: Die thickness is 5 to 6 mil. 4-153