AT-42036

Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42036 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42036 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. • Low noise figure: 1.9 dB typical NFO at 2.0 GHz • High gain-bandwidth product: 8.0 GHz typical fT • Cost effective ceramic microstrip package 36 micro-X Package AT-42036 Absolute Maximum Ratings [1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature [4] Units V V V mA mW °C °C Absolute Maximum 1.5 20 12 80 600 150 -65 to 150 Thermal Resistance[2,5]: θ jc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5.7 mW/°C for TC > 95°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications TA = 25°C Symbol |S21E|2 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions [1] Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Frequency f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz — µA µA pF Min. 10.0 Typ. 11.0 5.0 21.0 20.5 14.0 9.5 2.0 3.0 13.5 10.0 8.0 Max. 30 150 270 0.2 2.0 0.28 Note: 1. For this test, the emitter is grounded. 2 AT-42036 Typical Performance, TA = 25°C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 10 V 6V 4V 20 16 12 P1dB 16 |S21E|2 GAIN (dB) 20 P1dB 4.0 GHz 12 2.0 GHz 16 2.0 GHz 8 G1 dB (dB) 4.0 GHz 12 G1dB 16 G1 dB (dB) 4 8 14 12 10 0 G1dB 4.0 GHz 10 V 6V 4V 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 10 20 30 IC (mA) 40 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 24 21 18 GA Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 MSG GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 15 GAIN (dB) 12 9 6 NFO 4 3 2 1 1.0 2.0 3.0 0 4.0 5.0 NFO (dB) 3 0 0.5 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 3 AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 S11 Mag. .72 .59 .56 .56 .58 .59 .61 .63 .63 .63 .64 .67 .72 S11 Ang. -46 -137 -171 169 155 147 137 128 117 106 93 79 70 S21 dB 28.3 20.9 15.4 12.1 9.7 8.0 6.5 5.2 4.0 3.1 2.3 1.5 0.6 S21 Mag. 26.09 11.13 5.91 4.03 3.06 2.50 2.10 1.82 1.60 1.43 1.30 1.19 1.07 S21 Ang. 152 102 80 67 55 48 38 27 17 7 -3 -13 -23 S12 dB -37.0 -31.0 -28.2 -26.6 -24.2 -22.6 -20.8 -19.6 -18.0 -16.5 -15.4 -14.3 -13.4 S12 Mag. .014 .028 .039 .047 .062 .074 .092 .105 .126 .149 .169 .193 .215 S12 Ang. 73 44 47 52 55 61 65 62 57 53 48 41 35 S22 Mag. .92 .58 .51 .50 .48 .47 .46 .47 .49 .51 .52 .51 .46 S22 Ang. -14 -27 -29 -33 -38 -42 -51 -63 -72 -80 -87 -94 -105 AT-42036 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA Freq. GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 S11 Mag. .50 .52 .53 .53 .55 .57 .59 .60 .60 .60 .61 .64 .69 S11 Ang. -88 -164 174 160 148 142 134 125 116 104 92 79 70 S21 dB 33.2 22.4 16.6 13.1 10.8 9.0 7.5 6.3 5.2 4.2 3.4 2.6 1.7 S21 Mag. 45.64 13.24 6.75 4.55 3.45 2.81 2.37 2.06 1.81 1.62 1.47 1.35 1.21 S21 Ang. 135 92 76 64 53 47 37 27 17 7 -2 -13 -23 S12 dB -42.0 -32.8 -28.2 -25.6 -23.2 -21.6 -20.0 -18.4 -17.0 -16.0 -14.9 -14.1 -13.2 S12 Mag. .008 .023 .039 .053 .069 .084 .101 .120 .141 .158 .179 .198 .219 S12 Ang. 68 57 63 66 65 67 64 61 57 50 45 37 30 S22 Mag. .77 .45 .42 .41 .41 .39 .38 .39 .41 .43 .44 .43 .38 S22 Ang. -22 -25 -26 -30 -36 -40 -49 -61 -71 -78 -84 -91 -102 A model for this device is available in the DEVICE MODELS section. AT-42036 Noise Parameters, VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.0 1.1 1.3 2.0 3.0 Γopt Mag .04 .04 .07 .20 .51 Γopt Ang 10 66 150 -178 -110 RN /50 0.13 0.12 0.12 0.12 0.36 4 Part Number Ordering Information Part Number AT-42036-TR1 AT-42036-BLK Devices per Reel 1000 10 Reel Size 7” STRIP 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 2.11 (0.083) DIA. Device Orientation TOP VIEW 1 420 12 mm 420 420 420 GATE 1 3 0.508 (0.020) SOURCE 1.45 ± 0.25 (0.057 ± 0.010) 2 1 INDICATES PIN 1 ORIENTATION. 2.54 (0.100) 0.15 ± 0.05 (0.006 ± 0.002) 0.56 (0.022) 4.57 ± 0.25 0.180 ± 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 Tape Dimensions P0 t COVER TAPE A KC B F D0 P2 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 MM E W USER FEED DIRECTION T P1 D1 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION SYMBOL A B K P1 D1 D0 P0 E W t C T F P2 SIZE (mm) 5.77 ± 0.10 6.10 ± 0.10 1.70 ± 0.10 8.00 ± 0.10 1.50 min. SIZE (INCHES) 0.227 ± 0.004 0.240 ± 0.004 0.067 ± 0.004 0.314 ± 0.004 0.059 min. PERFORATION 1.50 + 0.10/-0.05 0.059 + 0.004/-0.002 4.00 ± 0.10 0.157 ± 0.004 1.75 ± 0.10 0.069 ± 0.004 12.00 ± 0.20 0.30 ± 0.05 9.30 ± 0.10 0.065 ± 0.010 5.50 ± 0.05 2.00 ± 0.05 0.472 ± 0.008 0.012 ± 0.002 0.366 ± 0.004 0.0026 ± 0.0004 0.217 ± 0.002 0.079 ± 0.002 CARRIER TAPE WIDTH THICKNESS COVER TAPE DISTANCE BETWEEN CENTERLINE WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) 5 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5980-1854E October 31, 2001 5988-4735EN