ATF-13100

2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also “Chip Use” in the APPLICATIONS section. Chip Outline D S G S Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18 GHz frequency range. Electrical Specifications, TA = 25°C Symbol NFO Parameters and Test Conditions[1] Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz Units dB dB dB dB dB dB Min. Typ. Max. 0.8 1.1 1.5 12.0 9.5 8.0 17.5 8.5 30 40 -3.0 55 50 -1.5 90 -0.8 1.2 GA Gain @ NFO; VDS = 2.5 V, IDS = 20 mA 9.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 40 mA 1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA Transconductance: VDS = 2.5 V, VGS = 0 V Saturated Drain Current; VDS = 2.5 V, VGS = 0 V Pinchoff Voltage: VDS = 2.5 V, IDS = 1 mA f = 12.0 GHz dBm f = 12.0 GHz dB mmho mA V Note: 1. RF performance is determined by assembling and testing 10 samples per wafer . 5-33 5965-8694E ATF-13100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] + 5 -4 -6 IDSS 225 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 4 mW/°C for TMOUNTING SURFACE > 119°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: θjc = 250°C/W; TCH = 150°C 1 µm Spot Size[4] Part Number Ordering Information Part Number ATF-13100-GP3 Devices Per Tray 50 ATF-13100 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Freq. GHz 4.0 6.0 8.0 12.0 16.0 NFO dB 0.4 0.7 0.8 1.1 1.5 Γopt Mag 0.60 0.32 0.25 0.23 0.32 Ang 30 68 102 -165 -112 RN/50 0.32 0.21 0.15 0.09 0.21 ATF-13100 Typical Performance, TA = 25°C 2.0 20 12 10 15 GA (dB) GA GA 1.5 NFO (dB) 8 1.0 10 4.0 NFO (dB) 6 0.5 NFO 3.0 NFO 5 2.0 1.0 0 2.0 4.0 0 6.0 8.0 10.0 12.0 16.0 0 5 10 15 20 25 30 35 FREQUENCY (GHz) IDS (mA) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C. Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2.5V, f = 12.0 GHz. 5-34 GA (dB) Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 2.5 V, IDS = 20 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. .96 .92 .85 .79 .73 .68 .63 .62 .59 .59 .57 .60 .64 .67 .73 .77 .80 Ang. -27 -41 -58 -76 -95 -113 -132 -151 -167 173 155 136 116 98 83 72 63 dB 13.4 13.4 13.1 12.9 12.4 12.0 11.4 10.9 10.3 9.7 9.0 8.6 7.9 7.1 5.8 4.6 3.5 S21 Mag. 4.68 4.65 4.54 4.40 4.19 3.97 3.71 3.51 3.27 3.07 2.83 2.69 2.47 2.26 1.96 1.70 1.50 Ang. 153 140 126 113 100 87 75 63 53 40 30 19 7 -6 -16 -26 -35 dB -26.9 -23.6 -21.4 -19.8 -18.7 -18.0 -17.5 -17.1 -16.8 -16.5 -16.5 -16.4 -16.4 -16.4 -16.9 -17.0 -17.4 S12 Mag. .045 .066 .085 .102 .116 .126 .134 .140 .144 .149 .150 .151 .151 .152 .143 .141 .135 S22 Ang. 75 67 59 50 42 34 25 18 11 2 -9 -16 -25 -34 -40 -45 -48 Mag. .55 .52 .49 .44 .38 .30 .24 .18 .13 .08 .02 .08 .15 .23 .31 .36 .40 Ang. -16 -24 -33 -41 -48 -54 -64 -75 -84 -104 160 106 103 100 90 82 72 A model for this device is available in the DEVICE MODELS section. ATF-13100 Chip Dimensions 356 µm 14 mil 50 µm 1.97 mil 44 µm 1.73 mil D 118 µm 4.65 mil 254 µm 10 mil S G S 92 µm 3.62 mil 50 µm 1.97 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. 5-35