ATF-551M4-TR2

Agilent ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • Very low noise figure and high linearity • Single Supply Enhancement Mode Technology[1] optimized for 3V operation Description Agilent Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E-pHEMT GAAs FET housed in a thin miniature leadless package. The combination of small device size, super low noise (under 1 dB Fmin from 2 to 6 GHz), high linearity and low power makes the ATF-551M4 ideal for LNA or hybrid module designs in wireless receiver in the 450 MHz to 10 GHz frequency band. Applications include Cellular/ PCS/ WCDMA handsets and data modem cards, fixed wireless infrastructure in the 2.4, 3.5 GHz and UNII frequency bands, as well as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2 Wireless LAN PC-cards. MiniPak 1.4 mm x 1.2 mm Package • Excellent uniformity in product specifications • 400 micron gate width • Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm • Tape-and-reel packaging option available Pin Connections and Package Marking Source Pin 3 Drain Pin 4 Vx Specifications • 2 GHz; 2.7V, 10 mA (typ.) • 24.1 dBm output 3rd order intercept • 14.6 dBm output power at 1 dB gain compression • 0.5 dB noise figure • 17.5 dB associated gain Vx Gate Pin 2 Source Pin 1 Note: Top View. Package marking provides orientation, product identification and date code. “V” = Device Type Code “x” = Date code character. A different character is assigned for each month and year. Applications • Low Noise Amplifier for: – Cellular/PCS/WCDMA handsets and modem cards – 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure – 2.4 GHz 802.11b Wireless LAN – 5 GHz 802.11a and HIPERLAN Wireless LAN • General purpose discrete E-pHEMT for other ultra low noise applications Note: 1. Agilent’s enhancement mode E-pHEMT devices are the first commercially available single-supply GaAs transistors that do not need a negative gate bias voltage for operation. They can help simplify the design and reduce the cost of receivers and transmitters in many applications in the 450 MHz to 10 GHz frequency range. ATF-551M4 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG θjc Parameter Drain-Source Voltage [2] Gate-Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Gate Current [5] Total Power Dissipation [3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [4] Units V V V mA mA mW dBm °C °C °C/W Absolute Maximum 5 -5 to 1 -5 to 1 100 1 270 +10 150 -65 to 150 240 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25°C. Derate 6 mW/°C for TL > 40°C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. Device can safely handle +10 dBm RF Input Power provided IGS is limited to 1 mA. IGS at P1dB drive RF level is bias circuit dependent. See applications section for additional information. 70 60 50 IDS (mA) 0.7V 40 30 20 10 0 0 1 2 3 4 VDS (V) 5 6 0.6V 0.5V 0.4V 0.3V 7 Figure 1. Typical I-V Curves. (VGS = 0.1 V per step) Product Consistency Distribution Charts [6] 180 150 120 -3 Std 90 60 150 Cpk = 1.64 Stdev = 0.19 120 Cpk = 2.85 Stdev = 0.25 160 Cpk = 2.46 Stdev = 0.06 120 +3 Std 90 -3 Std 80 +3 Std 60 30 0 30 40 0 15 16 17 GAIN (dBm) 18 19 22 23 24 OIP3 25 26 0 0.29 0.49 0.69 NF 0.89 1.09 Figure 2. Capability Plot for Gain @ 2.7 V, 10 mA. LSL = 15.5, Nominal = 17.5, USL = 18.5 Figure 3. Capability Plot for OIP3 @ 2.7 V, 10 mA. LSL = 22.0, Nominal = 24.1 Figure 4. Capability Plot for NF @ 2.7 V, 10 mA. Nominal = 0.5, USL = 0.9 Note: 6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 ATF-551M4 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol Vgs Vth Idss Gm Igss NF Gain OIP3 P1dB Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Gate Leakage Current Noise Figure [1] f = 2 GHz f = 2 GHz f = 2 GHz f = 2 GHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 2 mA Vds = 2.7V, Vgs = 0V Vds = 2.7V, gm = ∆Idss/∆Vgs; ∆Vgs = 0.75 – 0.7 = 0.05V Vgd = Vgs = -2.7V Vds = 2.7V, Ids = 10 mA Vds = 3V, Ids = 20 mA Vds = 2.7V, Ids = 10 mA Vds = 3V, Ids = 20 mA Vds = 2.7V, Ids = 10 mA Vds = 3V, Ids = 20 mA Vds = 2.7V, Ids = 10 mA Vds = 3V, Ids = 20 mA Units V V µA mmho µA dB dB dB dB dBm dBm dBm dBm Min. 0.3 0.18 — 110 — — — 15.5 — 22 — — — Typ. 0.47 0.37 0.1 220 — 0.5 0.5 17.5 18.0 24.1 30.0 14.6 16.0 Max. 0.65 0.53 3 285 95 0.9 — 18.5 — — — — — Gain [1] Output 3rd Order Intercept Point [1] 1dB Compressed Output Power [1] Notes: 1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from 4 wafers. Input 50Ω Input Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.3 Γ_ang = 11° (0.3 dB loss) DUT Output Matching Circuit Γ_mag = 0.3 Γ_ang = 9° (0.9 dB loss) 50Ω Output Transmission Line Including Gate Bias T (0.3 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been deembedded from actual measurements. ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated) Symbol Fmin Parameter and Test Condition Minimum Noise Figure [2] f = 900 GHz f = 2 GHz f = 3.9 GHz f = 5.8 GHz f = 900 GHz f = 2 GHz f = 3.9 GHz f = 5.8 GHz f = 900 GHz f = 3.9 GHz f = 5.8 GHz f = 900 GHz f = 3.9 GHz f = 5.8 GHz Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Vds = 2.7V, Ids = 10 mA Units dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm Min. — — — — — — — — — — — — — — Typ. 0.27 0.41 0.61 0.88 21.8 17.9 14.2 12.0 22.1 24.3 24.5 14.3 14.5 14.3 Max. — — — — — — — — — — — — — — Ga Associated Gain [2] OIP3 Output 3rd Order Intercept Point [3] 1dB Compressed Output Power [3] P1dB Notes: 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 3 ATF-551M4 Typical Performance Curves 26 25 24 GAIN (dB) Fmin (dB) 23 22 21 20 19 18 0 5 10 15 20 25 30 35 Ids (mA) 2V 2.7V 3V 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0 5 10 15 20 25 30 35 Ids (mA) OIP3 (dBm) 2V 2.7V 3V 32 30 28 26 24 22 20 18 16 0 5 10 15 20 25 30 35 Ids (mA) 2V 2.7V 3V Figure 6. Gain vs. Ids and Vds at 900 MHz[1]. Figure 7. Fmin vs. Ids and Vds at 900 MHz[2]. Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1]. 7 6 5 P1dB (dBm) 2V 2.7V 3V 18 17 16 15 14 13 12 11 10 35 9 0 5 10 15 20 25 2V 2.7V 3V IIP3 (dBm) 4 3 2 1 0 -1 -2 0 5 10 15 20 25 30 30 35 Ids (mA) Idq (mA) Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1]. Figure 10. P1dB vs. Idq and Vds at 900 MHz[1]. Notes: 1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 4 ATF-551M4 Typical Performance Curves, continued 20 0.6 0.5 0.4 GAIN (dB) 18 Fmin (dB) 0.3 0.2 16 2V 2.7V 3V 36 19 32 OIP3 (dBm) 2V 2.7V 3V 28 17 24 0.1 0 20 2V 2.7V 3V 15 0 5 10 15 20 25 30 35 Ids (mA) 16 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 Ids (mA) Ids (mA) Figure 11. Gain vs. Ids and Vds at 2 GHz[1]. Figure 12. Fmin vs. Ids and Vds at 2 GHz[2]. Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1]. 18 16 14 17 16 15 IIP3 (dBm) 12 P1dB (dB) 10 8 6 4 2 0 0 5 10 15 20 25 2V 2.7V 3V 14 13 12 11 10 2V 2.7V 3V 30 35 0 5 10 15 20 25 30 35 Ids (mA) Idq (mA) Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1]. Figure 15. P1dB vs. Idq and Vds at 2 GHz[1]. Notes: 1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 5 ATF-551M4 Typical Performance Curves, continued 30 1.4 1.2 25 1.0 OIP3 (dBm) 2V 10 mA 2.7V 10 mA 26 25 24 23 22 21 20 19 18 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) 2V 10 mA 2.7V 10 mA GAIN (dB) 20 Fmin (dB) 2V 10 mA 2.7V 10 mA 0.8 0.6 0.4 15 10 0.2 0 0 1 2 3 4 5 6 FREQUENCY (GHz) 5 Figure 16. Gain vs. Bias over Frequency[1]. Figure 17. Fmin vs. Bias over Frequency[2]. Figure 18. OIP3 vs. Bias over Frequency[1]. 16 14 12 10 6 4 2 0 -2 -4 -6 0 1 2 3 4 2V 10 mA 2.7V 10 mA 16 15 14 13 12 11 10 P1dB (dBm) IIP3 (dBm) 8 2V 10 mA 2.7V 10 mA 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Figure 19. IIP3 vs. Bias over Frequency[1]. Figure 20. P1dB vs. Bias over Frequency[1]. Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 6 ATF-551M4 Typical Performance Curves, continued 30 -40°C 25°C 85°C 1.6 1.4 1.2 -40°C 25°C 85°C 25 24 23 22 21 20 19 -40°C 25°C 85°C 25 GAIN (dB) 20 Fmin (dB) 1.0 0.8 0.6 0.4 15 10 0.2 5 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 FREQUENCY (GHz) OIP3 (dBm) 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 21. Gain vs. Temperature and Frequency with Bias at 2.7V, 10 mA[1]. 20 15 10 5 0 -5 -10 -40°C 25°C 85°C Figure 22. Fmin vs. Temperature and Frequency with Bias at 2.7V, 10 mA[2]. 16 15 14 13 12 11 10 -40°C 25°C 85°C Figure 23. OIP3 vs. Temperature and Frequency with Bias at 2.7V, 10 mA[1]. 0 1 2 3 4 5 6 P1dB (dBm) IIP3 (dBm) 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and Frequency with Bias at 2.7V, 10 mA[1]. Figure 25. P1dB vs. Temperature and Frequency with Bias at 2.7V, 10 mA[1]. Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached. 7 ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.954 0.906 0.896 0.833 0.790 0.781 0.739 0.710 0.683 0.679 0.680 0.681 0.683 0.690 0.687 0.691 0.696 0.713 0.747 0.759 0.808 0.828 0.870 Ang. -6.0 -29.1 -50.7 -55.7 -79.5 -96.5 -100.4 -118.5 -134.4 -160.0 -179.8 166.5 154.0 143.7 132.7 119.7 106.5 92.6 81.8 67.4 55.5 45.4 37.3 30.9 dB 20.41 19.95 19.35 19.18 18.15 17.22 17.00 15.84 14.74 12.75 11.03 9.65 8.43 7.43 6.53 5.72 4.98 4.28 3.53 2.82 1.97 1.00 -0.01 -1.04 S21 Mag. 10.479 9.946 9.280 9.103 8.080 7.260 7.078 6.197 5.459 4.341 3.559 3.036 2.638 2.353 2.122 1.932 1.775 1.636 1.501 1.384 1.255 1.122 0.999 0.887 S12 Ang. 175.9 158.2 144.2 141.0 125.6 114.9 112.5 101.1 91.2 74.5 60.3 48.5 37.2 26.4 15.7 4.5 -6.4 -17.7 -28.6 -40.4 -51.8 -62.4 -72.7 -82.6 S22 Ang. 86.3 71.6 60.8 58.3 46.8 39.0 37.3 29.8 23.7 14.8 8.6 5.0 2.1 -0.3 -2.6 -5.4 -8.4 -12.3 -16.2 -21.8 -27.4 -33.3 -39.2 -45.2 Mag. 0.007 0.031 0.052 0.056 0.075 0.085 0.087 0.095 0.099 0.104 0.105 0.107 0.107 0.110 0.113 0.117 0.122 0.129 0.135 0.143 0.149 0.153 0.157 0.159 Mag. 0.803 0.758 0.710 0.692 0.611 0.547 0.532 0.463 0.404 0.318 0.263 0.220 0.199 0.185 0.181 0.185 0.196 0.209 0.206 0.211 0.237 0.269 0.322 0.383 Ang. -3.3 -15.6 -27.4 -30.2 -42.3 -50.4 -52.3 -60.6 -67.6 -79.6 -91.2 -99.5 -111.0 -123.4 -137.7 -151.1 -163.5 -174.4 171.4 151.2 131.8 113.3 95.4 80.1 MSG/MAG dB 31.75 25.06 22.52 22.11 20.32 19.32 19.10 18.14 17.41 16.21 15.30 14.53 13.92 13.30 11.27 9.97 9.14 8.44 7.80 7.62 6.73 6.90 6.20 7.47 Typical Noise Parameters, VDS = 2V, IDS = 10 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.24 0.24 0.28 0.45 0.39 0.47 0.55 0.61 0.74 0.89 0.90 1.03 1.13 1.27 1.53 Γopt Mag. 0.62 0.56 0.52 0.47 0.47 0.42 0.35 0.32 0.33 0.36 0.37 0.38 0.44 0.48 0.46 Γopt Ang. -4.3 8.8 13.5 38.6 42.9 52.8 74.0 105.4 144.0 164.3 166.1 -170.9 -157.2 -142.4 -126.0 Rn/50 0.14 0.13 0.12 0.11 0.11 0.11 0.09 0.08 0.06 0.05 0.05 0.06 0.07 0.09 0.17 Ga dB 23.50 21.66 21.61 18.04 17.88 16.76 15.66 14.10 12.74 11.83 11.63 10.71 9.99 9.36 8.46 40 30 MSG 20 MAG MSG 10 |S21| 2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 26. MSG/MAG and |S21|2 vs. Frequency at 2V, 10 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 8 ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.947 0.892 0.880 0.812 0.768 0.758 0.718 0.692 0.671 0.670 0.671 0.674 0.676 0.684 0.682 0.686 0.691 0.708 0.744 0.756 0.805 0.825 0.870 Ang. -6.6 -31.6 -54.7 -60.1 -84.9 -102.1 -106.1 -124.1 -139.7 -164.5 176.6 163.5 151.5 141.6 130.9 118.0 105.1 91.4 80.9 66.5 54.9 45.0 37.0 30.7 dB 21.93 21.41 20.67 20.46 19.26 18.23 17.98 16.73 15.55 13.47 11.70 10.30 9.06 8.06 7.14 6.33 5.59 4.88 4.13 3.42 2.59 1.59 0.61 -0.41 S21 Mag. 12.489 11.757 10.804 10.547 9.186 8.153 7.923 6.859 5.991 4.716 3.845 3.273 2.838 2.528 2.276 2.072 1.903 1.753 1.609 1.483 1.347 1.201 1.073 0.954 S12 Ang. 175.5 156.7 142.0 138.6 123.0 112.3 109.9 98.9 89.3 73.3 59.7 48.3 37.4 27.0 16.5 5.6 -5.0 -16.1 -26.9 -38.5 -49.7 -60.2 -70.4 -80.1 S22 Ang. 86.2 70.9 59.7 57.1 46.0 38.7 37.2 30.5 25.3 18.0 13.1 10.5 8.2 6.1 3.7 0.6 -3.1 -7.6 -12.3 -18.6 -24.9 -31.2 -37.5 -43.8 Mag. 0.006 0.029 0.048 0.052 0.067 0.076 0.077 0.084 0.088 0.092 0.095 0.098 0.101 0.105 0.111 0.117 0.124 0.132 0.140 0.148 0.155 0.158 0.161 0.163 Mag. 0.765 0.715 0.659 0.641 0.555 0.489 0.474 0.407 0.352 0.272 0.222 0.181 0.164 0.152 0.150 0.156 0.170 0.183 0.181 0.188 0.217 0.253 0.310 0.373 Ang. -3.7 -17.0 -29.6 -32.5 -45.0 -53.1 -55.0 -63.2 -70.2 -82.3 -94.5 -103.2 -115.4 -128.5 -143.3 -156.9 -169.0 -179.3 165.9 145.0 125.0 106.8 89.4 74.9 MSG/MAG dB 33.18 26.08 23.52 23.07 21.37 20.31 20.12 19.12 18.33 17.10 16.07 15.24 14.49 12.66 11.51 10.35 9.57 8.87 8.27 8.14 7.23 7.38 6.61 7.67 Typical Noise Parameters, VDS = 2V, IDS = 15 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.21 0.21 0.27 0.42 0.37 0.44 0.52 0.57 0.71 0.85 0.86 0.97 1.08 1.22 1.44 Γopt Mag. 0.61 0.55 0.50 0.46 0.43 0.39 0.32 0.28 0.30 0.35 0.35 0.38 0.43 0.47 0.46 Γopt Ang. -6.1 7.0 11.4 38.1 42.7 52.9 74.4 108.3 149.5 170.0 171.7 -165.9 -152.1 -138.1 -122.5 Rn/50 0.12 0.12 0.11 0.10 0.10 0.10 0.08 0.07 0.06 0.05 0.05 0.06 0.07 0.10 0.17 Ga dB 24.12 22.18 22.12 18.61 18.52 17.34 16.21 14.65 13.27 12.38 12.19 11.24 10.49 9.84 8.96 40 30 MSG 20 MAG MSG 10 |S21|2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 27. MSG/MAG and |S21|2 vs. Frequency at 2V, 15 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 9 ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.994 0.942 0.882 0.869 0.798 0.753 0.744 0.706 0.681 0.663 0.664 0.666 0.670 0.673 0.681 0.678 0.682 0.688 0.706 0.743 0.753 0.804 0.824 0.869 Ang. -6.9 -33.3 -57.3 -62.8 -88.1 -105.5 -109.5 -127.4 -142.7 -167.0 174.6 161.9 150.1 140.4 129.8 117.1 104.3 90.6 80.3 65.9 54.4 44.7 36.7 30.6 dB 22.85 22.27 21.44 21.21 19.90 18.79 18.53 17.22 16.01 13.88 12.09 10.68 9.43 8.42 7.51 6.68 5.94 5.23 4.48 3.76 2.92 1.93 0.95 -0.05 S21 Mag. 13.876 12.985 11.806 11.491 9.881 8.704 8.443 7.262 6.314 4.943 4.021 3.418 2.962 2.637 2.373 2.158 1.982 1.826 1.675 1.542 1.400 1.249 1.116 0.994 S12 Ang. 175.3 155.7 140.5 137.1 121.3 110.7 108.4 97.5 88.2 72.5 59.3 48.1 37.3 27.1 16.8 6.0 -4.6 -15.6 -26.3 -38.0 -48.9 -59.3 -69.4 -78.9 S22 Ang. 85.6 70.4 59.0 56.5 45.7 38.9 37.4 31.3 26.7 20.3 16.2 14.1 12.0 10.0 7.4 3.7 -0.2 -5.2 -10.3 -17.0 -23.6 -30.1 -36.5 -43.0 Mag. 0.006 0.027 0.045 0.048 0.062 0.070 0.071 0.077 0.081 0.085 0.089 0.093 0.097 0.103 0.109 0.117 0.125 0.133 0.142 0.150 0.157 0.160 0.163 0.165 Mag. 0.740 0.687 0.627 0.608 0.520 0.455 0.441 0.376 0.323 0.248 0.201 0.162 0.144 0.133 0.131 0.139 0.154 0.168 0.169 0.182 0.212 0.250 0.306 0.367 Ang. -3.9 -17.8 -30.9 -33.8 -46.4 -54.4 -56.3 -64.3 -71.0 -82.9 -95.2 -103.7 -116.4 -130.0 -145.9 -160.3 -172.7 176.9 161.6 139.6 121.2 103.8 87.0 73.0 MSG/MAG dB 33.64 26.82 24.19 23.79 22.02 20.95 20.75 19.75 18.92 17.65 16.55 15.65 14.85 12.78 11.65 10.56 9.80 9.11 8.56 8.46 7.48 7.76 6.93 7.80 Typical Noise Parameters, VDS = 2V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.19 0.20 0.25 0.41 0.36 0.43 0.51 0.58 0.70 0.85 0.86 0.94 1.07 1.20 1.43 Γopt Mag. 0.59 0.54 0.48 0.43 0.41 0.37 0.29 0.26 0.29 0.34 0.35 0.37 0.42 0.48 0.46 Γopt Ang. -7.0 6.3 10.1 38.7 43.1 53.4 76.3 112.7 154.0 173.6 175.9 -162.3 -148.2 -135.2 -119.5 Rn/50 0.11 0.11 0.10 0.09 0.09 0.09 0.08 0.07 0.05 0.05 0.05 0.06 0.08 0.10 0.17 Ga dB 23.50 21.66 21.61 18.04 17.88 16.76 15.66 14.10 12.74 11.83 11.63 10.71 9.99 9.36 8.46 40 30 MSG 20 MAG MSG 10 |S21|2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 28. MSG/MAG and |S21|2 vs. Frequency at 2V, 20 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 10 ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.955 0.907 0.896 0.833 0.789 0.779 0.737 0.707 0.679 0.674 0.675 0.676 0.679 0.686 0.684 0.688 0.693 0.710 0.743 0.760 0.805 0.830 0.872 Ang. -5.9 -28.7 -50.0 -55.0 -78.6 -95.5 -99.4 -117.4 -133.4 -159.1 -178.9 167.3 154.9 144.5 133.5 120.8 107.5 93.7 82.7 68.6 56.5 46.2 38.1 31.5 dB 20.55 20.11 19.52 19.36 18.34 17.43 17.21 16.07 14.98 13.01 11.30 9.93 8.72 7.73 6.84 6.03 5.30 4.59 3.86 3.19 2.37 1.42 0.43 -0.58 S21 Mag. 10.656 10.129 9.466 9.292 8.265 7.439 7.255 6.361 5.610 4.471 3.673 3.136 2.728 2.435 2.198 2.002 1.841 1.696 1.559 1.443 1.314 1.177 1.051 0.935 S12 Ang. 175.9 158.4 144.6 141.4 126.1 115.4 113.0 101.7 91.8 75.0 60.8 49.1 37.7 27.0 16.2 5.1 -5.9 -17.2 -28.2 -39.8 -51.5 -62.2 -72.8 -83.1 S22 Ang. 86.3 72.0 61.3 58.8 47.6 40.0 38.4 31.0 25.1 16.6 10.9 8.1 5.9 4.3 2.9 0.7 -1.7 -5.2 -8.9 -14.3 -20.2 -26.2 -32.5 -39.1 Mag. 0.006 0.028 0.046 0.050 0.067 0.076 0.078 0.085 0.089 0.093 0.094 0.095 0.096 0.099 0.102 0.107 0.113 0.121 0.129 0.139 0.147 0.153 0.158 0.163 Mag. 0.825 0.782 0.735 0.717 0.639 0.577 0.562 0.495 0.439 0.357 0.303 0.264 0.244 0.230 0.222 0.222 0.230 0.239 0.232 0.222 0.232 0.251 0.293 0.353 Ang. -3.0 -14.0 -24.5 -27.0 -37.6 -44.6 -46.2 -53.1 -58.8 -68.3 -77.6 -83.7 -93.5 -104.1 -116.6 -129.0 -140.8 -151.9 -164.6 176.6 155.6 134.3 112.0 92.7 MSG/MAG dB 32.49 25.58 23.13 22.69 20.91 19.91 19.69 18.74 18.00 16.82 15.92 15.19 14.54 12.94 11.58 10.44 9.69 9.02 8.47 8.42 7.69 8.26 8.07 7.59 Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.26 0.27 0.30 0.46 0.41 0.47 0.55 0.61 0.74 0.88 0.90 1.00 1.12 1.25 1.46 Γopt Mag. 0.64 0.57 0.54 0.49 0.48 0.44 0.36 0.32 0.32 0.35 0.35 0.37 0.41 0.46 0.46 Γopt Ang. -4.4 7.5 11.1 36.6 40.4 50.3 69.5 101.3 139.5 161.5 163.9 -173.6 -158.2 -143.0 -127.2 Rn/50 0.14 0.13 0.13 0.11 0.12 0.11 0.10 0.08 0.06 0.05 0.05 0.06 0.07 0.09 0.15 Ga dB 23.79 21.80 21.60 18.06 17.92 16.79 15.70 14.24 12.86 12.01 11.82 10.93 10.24 9.66 8.85 40 30 MSG 20 MAG MSG 10 |S21|2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 29. MSG/MAG and |S21|2 vs. Frequency at 2.7V, 10 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 11 ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 15 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.949 0.894 0.882 0.814 0.768 0.758 0.718 0.691 0.668 0.667 0.668 0.671 0.673 0.682 0.677 0.684 0.690 0.707 0.744 0.750 0.806 0.824 0.872 Ang. -6.5 -31.2 -54.0 -59.4 -84.0 -101.1 -105.1 -123.1 -138.7 -163.5 177.5 164.3 152.2 142.3 131.6 118.5 105.8 91.7 81.2 66.4 55.1 45.2 37.1 31.0 dB 21.98 21.47 20.75 20.55 19.37 18.34 18.10 16.86 15.70 13.64 11.88 10.49 9.26 8.27 7.37 6.56 5.83 5.12 4.38 3.68 2.85 1.88 0.92 -0.08 S21 Mag. 12.559 11.839 10.905 10.650 9.298 8.265 8.034 6.966 6.095 4.806 3.928 3.345 2.904 2.591 2.335 2.128 1.956 1.804 1.656 1.528 1.389 1.242 1.112 0.991 S12 Ang. 175.6 156.9 142.3 138.9 123.4 112.7 110.3 99.3 89.7 73.6 59.9 48.5 37.5 27.0 16.4 5.4 -5.3 -16.7 -27.5 -39.4 -50.6 -61.2 -71.5 -81.5 S22 Ang. 86.4 71.0 60.1 57.5 46.6 39.5 38.0 31.4 26.3 19.4 15.0 13.1 11.4 10.0 8.4 5.6 2.6 -1.7 -6.1 -12.3 -18.7 -25.1 -31.6 -38.2 Mag. 0.006 0.026 0.043 0.047 0.061 0.068 0.070 0.076 0.079 0.083 0.085 0.088 0.091 0.095 0.101 0.107 0.115 0.124 0.133 0.143 0.151 0.156 0.162 0.166 Mag. 0.793 0.745 0.691 0.673 0.589 0.526 0.511 0.447 0.393 0.318 0.268 0.230 0.212 0.198 0.190 0.190 0.198 0.210 0.205 0.200 0.212 0.236 0.282 0.337 Ang. -3.2 -15.2 -26.4 -28.9 -39.7 -46.6 -48.1 -54.6 -59.9 -68.8 -77.7 -83.3 -93.0 -103.4 -116.2 -129.6 -142.6 -154.2 -167.8 172.5 150.9 129.7 107.9 89.7 MSG/MAG dB 33.21 26.58 24.04 23.55 21.83 20.85 20.60 19.62 18.87 17.63 16.65 15.80 15.04 12.89 11.88 10.70 10.06 9.46 8.93 9.10 7.85 9.01 8.37 7.76 Typical Noise Parameters, VDS = 2.7V, IDS = 15 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.18 0.18 0.24 0.38 0.33 0.42 0.5 0.55 0.66 0.83 0.84 0.95 1.06 1.18 1.43 Γopt Mag. 0.61 0.56 0.5 0.45 0.43 0.39 0.31 0.28 0.29 0.33 0.34 0.36 0.41 0.46 0.44 Γopt Ang. -6.0 6.8 10.7 36.9 41.9 50.9 73.0 107.0 146.6 168.7 170.7 -166.9 -152.3 -138.1 -122.5 Rn/50 0.12 0.12 0.11 0.1 0.1 0.1 0.08 0.07 0.06 0.05 0.05 0.06 0.07 0.1 0.16 Ga dB 24.49 22.38 22.32 18.78 18.65 17.47 16.37 14.83 13.4 12.54 12.36 11.44 10.69 10.12 9.21 40 30 MSG 20 MAG MSG 10 |S21| 2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 30. MSG/MAG and |S21|2 vs. Frequency at 2.7V, 15 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 12 ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.943 0.883 0.87 0.798 0.752 0.743 0.704 0.68 0.66 0.662 0.664 0.667 0.67 0.679 0.677 0.683 0.688 0.705 0.741 0.75 0.803 0.823 0.872 Ang. -6.8 -33.0 -56.9 -62.4 -87.6 -104.9 -108.8 -126.7 -142.1 -166.3 175.2 162.6 150.9 141.2 130.8 118.1 105.4 91.4 80.9 66.5 55.0 45.1 37.2 31.0 dB 22.92 22.35 21.53 21.30 20.00 18.91 18.65 17.35 16.14 14.02 12.25 10.84 9.61 8.61 7.71 6.90 6.17 5.46 4.72 4.03 3.19 2.22 1.26 0.27 S21 Mag. 13.988 13.103 11.932 11.616 10.004 8.822 8.557 7.367 6.411 5.026 4.095 3.483 3.022 2.695 2.429 2.213 2.034 1.876 1.722 1.59 1.444 1.291 1.156 1.032 S12 Ang. 175.4 155.9 140.7 137.3 121.6 111.0 108.6 97.8 88.4 72.8 59.5 48.4 37.6 27.3 16.9 6.0 -4.6 -15.8 -26.5 -38.3 -49.5 -60.1 -70.3 -80.2 S22 Ang. 86.4 70.6 59.4 56.9 46.2 39.6 38.2 32.3 27.8 22.0 18.6 17.4 16.1 14.8 13.0 9.9 6.4 1.8 -3.2 -9.8 -16.5 -23.2 -29.8 -36.6 Mag. 0.005 0.024 0.04 0.043 0.056 0.063 0.064 0.069 0.072 0.076 0.079 0.083 0.087 0.093 0.099 0.107 0.116 0.126 0.136 0.146 0.154 0.159 0.165 0.168 Mag. 0.772 0.72 0.662 0.643 0.557 0.494 0.48 0.417 0.367 0.297 0.251 0.216 0.199 0.185 0.177 0.178 0.186 0.198 0.193 0.188 0.2 0.224 0.269 0.325 Ang. -3.4 -15.7 -27.1 -29.6 -40.2 -46.7 -48.1 -54.2 -59.0 -67.2 -75.7 -80.7 -90.4 -100.6 -113.5 -127.2 -140.4 -152.2 -165.9 173.7 151.1 129.5 107.3 88.8 MSG/MAG dB 34.47 27.37 24.75 24.32 22.52 21.46 21.26 20.28 19.50 18.20 17.15 16.23 14.69 13.08 12.08 11.08 10.44 9.85 9.37 9.78 8.35 9.10 8.45 7.88 Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.18 0.18 0.23 0.39 0.36 0.43 0.51 0.56 0.68 0.83 0.85 0.95 1.06 1.19 1.41 Γopt Mag. 0.61 0.55 0.49 0.43 0.42 0.37 0.29 0.26 0.28 0.33 0.33 0.37 0.41 0.47 0.46 Γopt Ang. -6.7 5.9 9.9 37.8 41.6 51.7 73.6 110.7 152.8 172.9 175.6 -162.4 -148.8 -135.5 -119.2 Rn/50 0.12 0.11 0.10 0.09 0.09 0.09 0.08 0.07 0.05 0.05 0.05 0.06 0.08 0.10 0.17 Ga dB 24.89 22.72 22.68 19.18 18.98 17.83 16.69 15.19 13.79 12.91 12.73 11.80 11.06 10.47 9.59 40 30 MSG 20 MAG MSG 10 |S21| 2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 31. MSG/MAG and |S21|2 vs. Frequency at 2.7V, 20 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 13 ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 10 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.996 0.957 0.909 0.899 0.836 0.792 0.782 0.740 0.709 0.680 0.675 0.675 0.676 0.678 0.686 0.682 0.688 0.694 0.711 0.746 0.753 0.807 0.826 0.874 Ang. -5.9 -28.4 -49.6 -54.6 -78.1 -94.9 -98.8 -116.8 -132.8 -158.5 -178.4 167.8 155.1 144.9 133.8 120.5 107.5 93.3 82.4 67.5 55.9 45.8 37.6 31.3 dB 20.49 20.05 19.48 19.32 18.32 17.41 17.20 16.07 14.99 13.03 11.33 9.96 8.75 7.77 6.88 6.09 5.37 4.67 3.92 3.24 2.41 1.46 0.48 -0.53 S21 Mag. 10.578 10.059 9.420 9.246 8.241 7.424 7.241 6.360 5.616 4.481 3.684 3.146 2.738 2.447 2.209 2.015 1.855 1.711 1.571 1.452 1.320 1.183 1.057 0.941 S12 Ang. 176.0 158.5 144.8 141.6 126.3 115.7 113.2 101.9 91.9 75.1 60.9 49.1 37.6 26.8 16.0 4.7 -6.3 -17.8 -28.8 -40.8 -52.4 -63.1 -73.7 -84.1 S22 Ang. 86.1 72.0 61.5 59.1 47.9 40.3 38.6 31.3 25.3 16.9 11.3 8.7 6.6 5.4 4.1 2.1 0.0 -3.4 -6.9 -12.6 -18.5 -24.5 -30.8 -37.5 Mag. 0.006 0.027 0.045 0.049 0.065 0.074 0.075 0.082 0.086 0.090 0.091 0.092 0.093 0.095 0.099 0.104 0.110 0.118 0.127 0.137 0.146 0.152 0.159 0.164 Mag. 0.835 0.792 0.747 0.730 0.653 0.593 0.578 0.513 0.458 0.378 0.325 0.287 0.267 0.252 0.242 0.241 0.247 0.256 0.250 0.240 0.246 0.260 0.297 0.349 Ang. -2.8 -13.4 -23.5 -25.9 -36.1 -42.7 -44.2 -50.7 -56.0 -64.9 -73.5 -79.1 -88.4 -98.6 -110.5 -122.9 -135.1 -146.5 -159.0 -176.5 163.0 142.0 119.0 98.9 MSG/MAG dB 32.46 25.71 23.21 22.76 21.03 20.01 19.85 18.90 18.15 16.97 16.07 15.34 14.69 12.90 11.73 10.56 9.88 9.26 8.76 8.90 7.74 8.91 8.23 7.59 Typical Noise Parameters, VDS = 3V, IDS = 10 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.23 0.24 0.26 0.43 0.38 0.43 0.51 0.59 0.70 0.85 0.86 0.98 1.09 1.23 1.45 Γopt Mag. 0.65 0.58 0.54 0.50 0.48 0.44 0.36 0.31 0.32 0.35 0.35 0.36 0.41 0.45 0.44 Γopt Ang. -4.3 7.4 10.7 36.2 40.4 49.8 69.2 99.4 139.3 160.3 162.3 -173.7 -158.6 -143.7 -126.8 Rn/50 0.14 0.13 0.13 0.11 0.12 0.11 0.10 0.08 0.06 0.05 0.05 0.06 0.07 0.09 0.15 Ga dB 23.81 21.82 21.62 18.05 17.96 16.84 15.76 14.23 12.94 12.04 11.85 10.99 10.29 9.71 8.88 40 30 MSG 20 MAG MSG 10 |S21| 2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 32. MSG/MAG and |S21|2 vs. Frequency at 3V, 10 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 14 ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.949 0.894 0.882 0.813 0.768 0.758 0.717 0.690 0.668 0.666 0.668 0.670 0.672 0.681 0.678 0.684 0.690 0.707 0.744 0.751 0.807 0.824 0.874 Ang. -6.5 -31.2 -54.1 -59.4 -84.0 -101.2 -105.1 -123.1 -138.7 -163.5 177.5 164.4 152.3 142.4 131.7 118.6 105.8 91.8 81.3 66.6 55.2 45.3 37.3 31.1 dB 22.02 21.51 20.79 20.59 19.41 18.38 18.14 16.90 15.74 13.68 11.93 10.53 9.31 8.32 7.43 6.62 5.89 5.19 4.44 3.75 2.93 1.97 1.01 0.02 S21 Mag. 12.623 11.900 10.958 10.701 9.341 8.301 8.068 6.996 6.120 4.829 3.947 3.363 2.921 2.607 2.351 2.142 1.970 1.817 1.667 1.540 1.401 1.254 1.123 1.002 S12 Ang. 175.6 156.9 142.3 138.9 123.3 112.7 110.3 99.2 89.7 73.6 59.9 48.5 37.5 27.0 16.4 5.3 -5.5 -16.8 -27.6 -39.5 -50.7 -61.4 -71.9 -82.0 S22 Ang. 86.0 71.0 60.1 57.6 46.7 39.7 38.1 31.6 26.7 20.0 15.8 14.2 12.9 11.8 10.4 7.8 4.9 0.7 -3.7 -10.0 -16.4 -22.8 -29.5 -36.2 Mag. 0.005 0.025 0.041 0.045 0.059 0.066 0.067 0.073 0.076 0.080 0.082 0.084 0.087 0.092 0.098 0.104 0.113 0.122 0.132 0.142 0.151 0.157 0.163 0.167 Mag. 0.802 0.754 0.700 0.682 0.599 0.537 0.522 0.459 0.407 0.334 0.286 0.250 0.232 0.218 0.209 0.209 0.215 0.226 0.221 0.211 0.218 0.236 0.277 0.330 Ang. -3.1 -14.6 -25.4 -27.8 -38.1 -44.5 -45.9 -52.0 -56.9 -65.0 -73.3 -78.4 -87.6 -97.7 -110.0 -122.9 -135.4 -147.1 -160.3 -179.5 159.7 137.8 114.5 95.0 MSG/MAG dB 34.02 26.78 24.27 23.76 22.00 21.00 20.81 19.82 19.06 17.81 16.82 16.02 14.96 12.99 12.01 10.90 10.28 9.70 9.23 9.62 8.26 9.02 8.38 7.78 Typical Noise Parameters, VDS = 3V, IDS = 15 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.18 0.19 0.23 0.39 0.35 0.42 0.49 0.56 0.66 0.83 0.84 0.94 1.05 1.19 1.40 Γopt Mag. 0.63 0.56 0.51 0.46 0.44 0.39 0.31 0.27 0.29 0.33 0.33 0.35 0.40 0.46 0.44 Γopt Ang. -6.3 6.8 10.0 36.5 40.8 50.1 72.5 104.4 146.9 167.4 169.0 -166.9 -152.7 -138.6 -121.9 Rn/50 0.12 0.12 0.11 0.10 0.10 0.10 0.08 0.07 0.06 0.05 0.05 0.06 0.07 0.09 0.16 Ga dB 24.41 22.45 22.29 18.75 18.61 17.46 16.42 14.80 13.48 12.58 12.38 11.49 10.77 10.23 9.32 40 30 MSG 20 MAG MSG 10 |S21| 2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 33. MSG/MAG and |S21|2 vs. Frequency at 3V, 15 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 15 ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.995 0.943 0.883 0.870 0.798 0.752 0.743 0.704 0.679 0.660 0.662 0.664 0.667 0.670 0.679 0.677 0.683 0.689 0.705 0.742 0.751 0.806 0.826 0.874 Ang. -6.8 -33.0 -56.9 -62.4 -87.6 -104.9 -108.9 -126.7 -142.1 -166.3 175.3 162.6 150.9 141.3 130.9 118.1 105.4 91.4 80.9 66.4 55.0 45.1 37.2 31.1 dB 22.91 22.35 21.53 21.30 20.00 18.91 18.64 17.35 16.14 14.03 12.25 10.85 9.62 8.63 7.73 6.92 6.19 5.49 4.75 4.05 3.23 2.27 1.32 0.33 S21 Mag. 13.987 13.101 11.932 11.614 10.004 8.820 8.555 7.368 6.412 5.028 4.099 3.488 3.027 2.701 2.435 2.219 2.040 1.881 1.727 1.594 1.451 1.298 1.164 1.039 S12 Ang. 175.4 155.8 140.7 137.2 121.5 111.0 108.6 97.7 88.4 72.7 59.4 48.3 37.5 27.2 16.8 5.9 -4.8 -16.0 -26.8 -38.6 -49.8 -60.4 -70.8 -80.8 S22 Ang. 86.1 70.5 59.5 56.9 46.3 39.7 38.3 32.4 28.1 22.5 19.2 18.3 17.2 16.3 14.6 11.7 8.4 3.8 -1.0 -7.7 -14.4 -21.1 -27.9 -34.9 Mag. 0.005 0.024 0.039 0.042 0.054 0.061 0.062 0.067 0.070 0.074 0.076 0.080 0.084 0.090 0.096 0.104 0.114 0.124 0.134 0.145 0.153 0.159 0.165 0.170 Mag. 0.781 0.730 0.672 0.654 0.569 0.506 0.493 0.431 0.383 0.314 0.270 0.237 0.220 0.207 0.198 0.198 0.205 0.216 0.210 0.199 0.207 0.225 0.265 0.320 Ang. -3.3 -15.2 -26.1 -28.5 -38.5 -44.6 -46.0 -51.6 -56.0 -63.5 -71.5 -76.2 -85.2 -95.2 -107.6 -120.6 -133.4 -145.2 -158.4 -178.0 160.3 138.1 114.0 94.1 MSG/MAG dB 34.47 27.37 24.86 24.42 22.68 21.60 21.40 20.41 19.62 18.32 17.32 16.39 14.66 13.18 12.20 11.21 10.64 10.10 9.62 10.41 8.80 9.12 8.48 7.86 Typical Noise Parameters, VDS = 3V, IDS = 20 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.17 0.18 0.24 0.39 0.36 0.42 0.50 0.57 0.68 0.83 0.85 0.93 1.05 1.19 1.39 Γopt Mag. 0.62 0.55 0.50 0.43 0.41 0.37 0.29 0.25 0.28 0.32 0.33 0.36 0.41 0.46 0.45 Γopt Ang. -6.2 6.0 9.5 37.5 41.2 50.9 73.6 109.4 151.6 172.5 175.6 -162.7 -149.1 -135.5 -119.4 Rn/50 0.12 0.11 0.10 0.10 0.09 0.09 0.08 0.07 0.06 0.05 0.05 0.06 0.08 0.10 0.17 Ga dB 24.92 22.79 22.59 19.22 19.00 17.83 16.72 15.18 13.80 12.93 12.77 11.84 11.09 10.53 9.64 40 30 MSG 20 MAG MSG |S21| 2 10 MSG MAG 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 34. MSG/MAG and |S21|2 vs. Frequency at 3V, 20 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 16 ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.994 0.936 0.870 0.856 0.781 0.736 0.726 0.690 0.668 0.653 0.656 0.659 0.663 0.666 0.676 0.674 0.680 0.688 0.705 0.743 0.751 0.806 0.826 0.875 Ang. -7.4 -35.3 -60.4 -66.1 -92.0 -109.4 -113.3 -131.0 -146.1 -169.6 172.7 160.5 149.0 139.6 129.3 116.6 104.1 90.3 80.1 65.8 54.5 44.9 37.0 31.0 dB 23.90 23.25 22.32 22.05 20.61 19.44 19.15 17.79 16.54 14.38 12.58 11.17 9.93 8.94 8.03 7.22 6.48 5.77 5.03 4.34 3.53 2.56 1.64 0.67 S21 Mag. 15.662 14.544 13.058 12.665 10.732 9.374 9.072 7.753 6.713 5.234 4.258 3.618 3.138 2.798 2.522 2.296 2.109 1.944 1.784 1.648 1.502 1.343 1.208 1.080 S12 Ang. 175.0 154.5 138.7 135.2 119.4 108.9 106.6 96.0 86.9 71.7 58.7 47.9 37.2 27.1 16.8 5.9 -4.6 -15.8 -26.4 -38.0 -49.2 -59.8 -70.1 -80.2 S22 Ang. 86.1 69.8 58.7 56.2 46.0 40.1 38.8 33.7 30.3 26.1 23.8 23.6 22.9 21.9 20.1 16.9 13.1 8.0 3.0 -4.1 -11.1 -18.1 -25.2 -32.4 Mag. 0.005 0.022 0.035 0.038 0.048 0.054 0.055 0.059 0.062 0.066 0.069 0.074 0.079 0.086 0.094 0.103 0.113 0.124 0.135 0.147 0.156 0.162 0.168 0.174 Mag. 0.760 0.705 0.644 0.624 0.539 0.480 0.467 0.410 0.367 0.307 0.268 0.238 0.224 0.211 0.203 0.202 0.208 0.219 0.213 0.200 0.203 0.218 0.254 0.306 Ang. -3.4 -15.4 -26.2 -28.5 -37.7 -43.1 -44.2 -49.0 -52.7 -59.2 -66.7 -70.9 -79.8 -89.5 -101.5 -114.5 -127.3 -139.4 -152.3 -170.8 166.8 143.9 118.4 97.4 MSG/MAG dB 34.96 28.20 25.72 25.23 23.49 22.40 22.17 21.19 20.35 18.99 17.90 16.89 14.61 13.35 12.55 11.58 11.01 10.62 10.38 10.50 9.84 9.19 8.57 7.93 Typical Noise Parameters, VDS = 3V, IDS = 30 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 MSG/MAG and |S21|2 (dB) Fmin dB 0.16 0.18 0.24 0.39 0.36 0.45 0.52 0.59 0.71 0.86 0.89 0.99 1.12 1.26 1.50 Γopt Mag. 0.60 0.55 0.47 0.39 0.38 0.33 0.26 0.23 0.28 0.33 0.33 0.37 0.42 0.48 0.46 Γopt Ang. -6.2 6.4 10.1 39.1 42.7 54.2 79.0 119.0 162.1 -179.3 -176.7 -156.1 -143.5 -130.8 -115.1 Rn/50 0.11 0.11 0.10 0.09 0.09 0.09 0.08 0.06 0.05 0.05 0.05 0.07 0.09 0.12 0.20 Ga dB 25.60 23.17 23.19 19.73 19.48 18.36 17.20 15.66 14.28 13.39 13.20 12.27 11.50 10.96 10.01 40 30 MSG 20 MAG MSG 10 |S21|2 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 35. MSG/MAG and |S21|2 vs. Frequency at 3V, 30 mA. Notes: 1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of the gate pad. The output reference plane is at the end of the drain pad. 17 S and Noise Parameter Measurements The position of the reference planes used for the measurement of both S and Noise Parameter measurements is shown in Figure 36. The reference plane can be described as being at the center of both the gate and drain pads. S and noise parameters are measured with a 50 ohm microstrip test fixture made with a 0.010" thickness aluminum substrate. Both source pads are connected directly to ground via a 0.010" thickness metal rib which provides a very low inductance path to ground for both source pads. The inductance associated with the addition of printed circuit board plated through holes and source bypass capacitors must be added to the computer circuit simulation to properly model the effect of grounding the source leads in a typical amplifier design. Reference Plane source impedance, typically 50Ω, to an impedance represented by the reflection coefficient Γo. The designer must design a matching network that will present Γo to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Γo. If the reflection coefficient of the matching network is other than Γo, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |Γs – Γo | 2 ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when air wound coils (Q>100)are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the air wound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. SMT Assembly The package can be soldered using either lead-bearing or leadfree alloys (higher peak temperatures). Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g. IR or vapor phase reflow, wave soldering, etc) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the Minipak 1412 package, will reach solder reflow temperatures faster than those with a greater mass. The recommended leaded solder time-temperature profile is shown in Figure 37. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone Zo (|1 + Γo| 2) (1 - |Γs| 2) Where Rn/Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. Typically for FETs , the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand Source Pin 3 Drain Pin 4 Vx Gate Pin 2 Source Pin 1 Microstrip Transmission Lines Figure 36. Position of the Reference Planes. Noise Parameter Applications Information The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the 18 briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of board or damage to components due to thermal shock. The maximum temperature in the reflow zone (Tmax) should not exceed 235°C for leaded solder. These parameters are typical for a surface mount assembly process for the ATF-551M4. As a general guideline, the circuit board and components should only be exposed to the minimum temperatures and times the necessary to achieve a uniform reflow of solder. 250 The recommended lead-free reflow profile is shown in Figure 38. Electrostatic Sensitivity FETs and RFICs are electrostatic discharge (ESD) sensitive devices. Agilent devices are manufactured using a very robust and reliable PHEMT process, however, permanent damage may occur to these devices if they are subjected to high-energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equipment) can discharge without detection and may result in failure or degradation in performance and reliability. Electronic devices may be subjected to ESD damage in any of the following areas: • • • • Storage & handling Inspection Assembly & testing In-circuit use The ATF-551M4 is an ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, and assembling these devices to avoid damage. Any user-accessible points in wireless equipment (e.g. antenna or battery terminals) provide an opportunity for ESD damage. For circuit applications in which the ATF-551M4 is used as an input or output stage with close coupling to an external antenna, the device should be protected from high voltage spikes due to human contact with the antenna. A good practice, illustrated in Figure 39, is to place a shunt inductor or RF choke at the antenna connection to protect the receiver and transmitter circuits. It is often advantageous to integrate the RF choke into the design of the diplexer or T/R switch control circuitry. TMAX 200 TEMPERATURE (°C) 150 Reflow Zone 100 Preheat Zone 50 0 0 60 120 180 240 300 TIME (seconds) Cool Down Zone Figure 37. Leaded Solder Reflow Profile. 350 300 Peak Temperature Min. 240°C Max. 255°C TEMPERATURE (°C) 250 221 200 150 100 50 0 0 Preheat 130 – 170°C Min. 60s Max. 150s Reflow Time Min. 60s Max. 90s Figure 39. In-circuit ESD Protection. 30 60 90 120 150 180 210 240 270 300 330 360 TIME (seconds) Figure 38. Lead-free Solder Reflow Profile. 19 ATF-551M4 Applications Information Introduction Agilent Technologies’s ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 10 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-551M4 enhancement mode PHEMT requires a nominal 0.47V potential between the gate and source for a nominal drain current of 10 mA. Matching Networks The techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications. Consult the Agilent Technologies web site for application notes covering specific designs and applications. High pass impedance matching networks consisting of L1/C1 and L4/C4 provide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection. Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 also provide a termination for low frequency mixing products. These mixing products are as a result of two or more in-band signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are terminated by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 uF in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results. INPUT Zo L1 L2 R4 C2 L3 C5 R3 R5 R1 C3 R2 C6 C1 Q1 C4 Zo OUTPUT apply a positive voltage on the gate to set the desired amount of quiescent drain current Id. Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs = 0V. Only when Vgs is increased above Vth, the device threshold voltage, will drain current start to flow. At a Vds of 2.7V and a nominal Vgs of 0.47V, the drain current Id will be approximately 10 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals. Passive Biasing Passive biasing of the ATF-551M4 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of R3 to help keep drain current constant. In the case of a typical depletion mode FET, the voltage divider which is normally connected to a negative voltage source is connected to the gate through resistor R4. Additional resistance in the form of R5 (approximately 10KΩ) is added to provide current limiting for the gate of enhancement mode devices such as the ATF-551M4. This is especially important when the device is driven to P1dB or Psat. Resistor R3 is calculated based on desired Vds , Ids and available power supply voltage. L4 Vdd Figure 1. Typical ATF-551M4 LNA with Passive Biasing. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely 20 R3 = VDD – Vds Ids + IBB p (1) INPUT Zo C1 Q1 L1 C4 Zo OUTPUT Example Circuit VDD = 3 V Vds = 2.7 V Ids = 10 mA R4 = 10 Ω VBE = 0.7 V L4 L2 L3 C5 R4 C3 C2 VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current. IBB is the current flowing through the R1/R2 resistor voltage divider network. The value of resistors R1 and R2 are calculated with the following formulas. R1 = Vgs IBB p R5 R6 C7 Q2 C6 Vdd R3 R2 R7 R1 Figure 2. Typical ATF-551M4 LNA with Active Biasing. (2) R2 = (Vds – Vgs) R1 Vgs p (3) Example Circuit VDD = 3V Vds = 2.7V Ids = 10 mA Vgs = 0.47V Choose IBB to be at least 10X the maximum expected gate leakage current. IBB was conservatively chosen to be 0.5 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 940Ω R2 = 4460Ω R3 = 28.6Ω Active Biasing Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. An active bias scheme is shown in Figure 2. 21 R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows. VE = Vds + (Ids • R4) R3 = VDD – VE Ids (1) (2) p Equation (1) calculates the required voltage at the emitter o the PNP transistor based o desired Vds and Ids throug resistor R4 to be 2.8V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3=18.2Ω. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds. Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=4200Ω and R2 =1800Ω. R7 is chosen to be 1 kΩ. This resistor keeps a small amount of current flowing through Q2 to help maintain bias stability. R6 is chosen to be 10 KΩ. This value of resistance is high enough to limit Q1 gate current in the presence of high RF drive levels as experienced when Q1 is driven to the P1dB gain compression point. C7 provides a low frequency bypass to keep noise from Q2 effecting the operation of Q1. C7 is typically 0.1 µF. Maximum Suggested Gate Current The maximum suggested gate current for the ATF-551M4 is 1 mA. Incorporating resistor R5 in the passive bias network or resistor R6 in the active bias network safely limits gate current to 500 µA at P1dB drive levels. In order to minimize component count in the passive biased amplifier circuit, the 3 resistor bias circuit consisting of R1, R2, and R5 can be simplified if desired. R5 can be removed if R1 is replaced with a 5.6KΩ resistor VB = VE – VBE VB = R1 V R1 + R2 DD p (3) (4) (5) VDD = IBB (R1 + R2) Rearranging equation (4) provides the following formula R2 = R1 (VDD – VB) VB (4A) p and rearranging equation (5) provides the follow formula R1 = IBB VDD V – VB 1 + DD VB (5A) 9 ( ) p and if R2 is replaced with a 27KΩ resistor. This combination should limit gate current to a safe level. PCB Layout A suggested PCB pad print for the miniature, Minipak 1412 package used by the ATF-551M4 is shown in Figure 3. 1.1 0.043 0.4 0.016 0.3 0.012 0.5 0.020 0.3 0.012 0.4 0.016 0.5 0.020 This pad print provides allowance for package placement by automated assembly equipment without adding excessive parasitics that could impair the high frequency performance of the ATF-551M4. The layout is shown with a footprint of the ATF-551M4 superimposed on the PCB pads for reference. For Further Information The information presented here is an introduction to the use of the ATF-551M4 enhancement mode PHEMT. More detailed application circuit information is available from Agilent Technologies. Consult the web page or your local Agilent Technologies sales representative. Figure 3. PCB Pad Print for Minipak 1412. Package (mm [inches ]). ATF-551M4 Die Model Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=0.6193 pF Beta=0.444 Cgd=0.1435 pF Lambda=72e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.5 Ohm Tnom=16.85 Rd=2.025 Ohm Idstc= Rg=1.7 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.675 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.094 nH Betatce= Ls= Rgs=0.5 Ohm Cds=0.100 pF Rc=390 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= ATF-551M4 Minipak Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.28 pF TLINP TL3 Z=Z2 Ohm L=23.6 mil K=K A=0.000 F=1 GHz TanD=0.001 GATE Port G Num=1 TLINP TL1 Z=Z2/2 Ohm L=22 mil K=K A=0.000 F=1 GHz TanD=0.001 L L1 L=0.234 nH R=0.001 GaAsFET FET1 Mode1=MESFETM1 Mode=Nonlinear TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L6 L=0.147 nH R=0.001 C C2 C=0.046 pF L L7 L=0.234 nH R=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.2 mil K=K A=0.000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=27.5 mil K=K A=0.000 F=1 GHz TanD=0.001 SOURCE Port S2 Num=4 DRAIN Port D Num=3 SOURCE Port S1 Num=2 TLINP TL9 Z=Z2 Ohm L=11 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.281 nH R=0.001 MSub MSUB MSub2 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil 22 Ordering Information Part Number ATF-551M4-TR1 ATF-551M4-TR2 ATF-551M4-BLK No. of Devices 3000 10,000 100 Container 7” Reel 13” Reel antistatic bag MiniPak Package Outline Drawing 1.44 (0.058) 1.40 (0.056) Solder Pad Dimensions 4 3 1.12 (0.045) 1.08 (0.043) 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) 0.00 Vx Top view 1.20 (0.048) 1.16 (0.046) 2 1 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.70 (0.028) 0.58 (0.023) 0.92 (0.037) 0.88 (0.035) 0.42 (0.017) 1.32 (0.053) 0.38 (0.015) 1.28 (0.051) Bottom view -0.07 (-0.003) -0.03 (-0.001) Side view Dimensions are in millimeteres (inches) 23 Device Orientation for Outline 4T, MiniPak 1412 REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm Note: Vx represents Package Marking Code. Device orientation is indicated by package marking. Vx Vx Vx Vx Tape Dimensions P P0 D P2 E F W C A0 B0 t1 (CARRIER TAPE THICKNESS) D1 Tt (COVER TAPE THICKNESS) 5° MAX. K0 5° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 1.40 ± 0.05 1.53 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 8.00 + 0.30 - 0.10 0.254 ± 0.02 5.40 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 0.315 + 0.012 - 0.004 0.010 ± 0.0008 0.213 ± 0.004 0.0024 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE For product information and a complete list of Agilent contacts and distributors, please go to our web site. www.agilent.com/semiconductors E-mail: SemiconductorSupport@agilent.com Data subject to change. Copyright © 2004 Agilent Technologies, Inc. Obsoletes 5988-4455EN July 16, 2004 5988-9006EN