ATF54143

Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications Description Agilent Technologies’s ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range. Surface Mount Package SOT-343 • 800 micron gate width • Low cost surface mount small plastic package SOT-343 (4 lead SC-70) • Tape-and-Reel packaging option available Specifications 2 GHz; 3 V, 60 mA (Typ.) • 36.2 dBm output 3rd order intercept • 20.4 dBm output power at 1 dB gain compression • 0.5 dB noise figure GATE Pin Connections and Package Marking 4Fx DRAIN SOURCE SOURCE • 16.6 dB associated gain Applications • Low noise amplifier for cellular/ PCS base stations • LNA for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Note: Top View. Package marking provides orientation and identification “4F” = Device Code “x” = Date code character identifies month of manufacture. ATF-54143 Absolute Maximum Ratings [1] Symbol VDS VGS VGD IDS Pdiss Pin max. IGS TCH TSTG θjc 120 0.7V Parameter Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [3] RF Input Power Gate Source Current Channel Temperature Storage Temperature Thermal Resistance [4] Units V V V mA mW dBm mA °C °C °C/W Absolute Maximum 5 -5 to 1 5 120 360 10[5] 2 [5] 150 -65 to 150 162 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25°C. Derate 6 mW/°C for TL > 92°C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. The device can handle +10 dBm RF Input Power provided IGS is limited to 2 mA. IGS at P1dB drive level is bias circuit dependent. See application section for additional information. 100 0.6V 80 IDS (mA) 60 0.5V 40 20 0 0 1 2 3 4 VDS (V) 5 6 7 0.4V 0.3V Figure 1. Typical I-V Curves. (VGS = 0.1 V per step) Product Consistency Distribution Charts [6, 7] 160 Cpk = 0.77 Stdev = 1.41 200 Cpk = 1.35 Stdev = 0.4 160 160 Cpk = 1.67 Stdev = 0.073 120 120 120 80 -3 Std -3 Std 80 +3 Std 80 +3 Std 40 40 40 0 30 32 34 36 OIP3 (dBm) 38 40 42 0 14 15 16 17 GAIN (dB) 18 19 0 0.25 0.45 0.65 NF (dB) 0.85 1.05 Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA. LSL = 33.0, Nominal = 36.575 Figure 3. Gain @ 2 GHz, 3 V, 60 mA. USL = 18.5, LSL = 15, Nominal = 16.6 Figure 4. NF @ 2 GHz, 3 V, 60 mA. USL = 0.9, Nominal = 0.49 Notes: 6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circut losses have been de-embeaded from actual measurements. 2 ATF-54143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol Vgs Vth Idss Gm Igss NF Ga OIP3 P1dB Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Gate Leakage Current Noise Figure [1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 4 mA Vds = 3V, Vgs = 0V Vds = 3V, gm = ∆Idss/∆Vgs; ∆Vgs = 0.75 - 0.7 = 0.05V Vgd = Vgs = -3V Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Units V V µA mmho µA dB dB dB dB dBm dBm dBm dBm Min. 0.4 0.18 — 230 — — — 15 — 33 — — — Typ.[2] 0.59 0.38 1 410 — 0.5 0.3 16.6 23.4 36.2 35.5 20.4 18.4 Max. 0.75 0.52 5 560 200 0.9 — 18.5 — — — — — Associated Gain [1] Output 3rd Order Intercept Point [1] 1dB Compressed Output Power [1] Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values measured from a sample size of 450 parts from 9 wafers. Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.30 Γ_ang = 150° (0.3 dB loss) DUT Output Matching Circuit Γ_mag = 0.035 Γ_ang = -71° (0.4 dB loss) 50 Ohm Transmission Line Including Drain Bias T (0.3 dB loss) Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. 3 ATF-54143 Typical Performance Curves 0.7 0.6 0.5 0.4 19 18 17 0.5 0.6 GAIN (dB) 3V 4V Fmin (dB) Fmin (dB) 16 15 14 13 12 3V 4V 0.3 0.2 0.4 3V 4V 0.3 0.1 0 0 20 40 Id (mA) 60 80 0.2 0 20 40 Id (mA) 60 80 100 100 0 20 40 60 80 100 Ids (mA) Figure 6. Fmin vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. 25 24 23 Figure 7. Fmin vs. Ids and Vds Tuned for Max OIP3 and Min NF at 900 MHz. 42 37 32 Figure 8. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. 40 35 OIP3 (dBm) OIP3 (dBm) GAIN (dB) 22 21 20 19 18 0 20 40 60 80 100 Ids (mA) 3V 4V 30 27 22 17 12 0 20 40 60 80 100 Ids (mA) 3V 4V 25 3V 4V 20 15 0 20 40 60 80 100 Ids (mA) Figure 9. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz. 24 22 20 18 16 14 12 0 20 40 60 80 100 Idq (mA)[1] 3V 4V Figure 10. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz. 23 22 21 Figure 11. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz. 35 30 25 25°C -40°C 85°C P1dB (dBm) P1dB (dBm) GAIN (dB) 3V 4V 20 19 18 17 16 15 0 20 40 60 80 100 Idq (mA)[1] 20 15 10 5 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 12. P1dB vs. Idq and Vds Tuned for Max OIP3 and Fmin at 2 GHz. Figure 13. P1dB vs. Idq and Vds Tuned for Max OIP3 and Fmin at 900 MHz. Figure 14. Gain vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA. Notes: 1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase substantially as P1dB is approached. 2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 4 ATF-54143 Typical Performance Curves, continued 2 25°C -40°C 85°C 45 40 35 21 20.5 20 1.5 P1dB (dBm) 25°C -40°C 85°C OIP3 (dBm) Fmin (dB) 19.5 19 18.5 18 17.5 17 25°C -40°C 85°C 30 25 20 15 1.0 0.5 0 0 1 2 3 4 5 6 FREQUENCY (GHz) 10 0 1 2 3 4 5 6 FREQUENCY (GHz) 0 1 2 3 4 5 6 FREQUENCY (GHz) Figure 15. Fmin[2] vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA. 1.4 1.2 1.0 Figure 16. OIP3 vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA. Figure 17. P1dB vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA. Fmin (dB) 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 60 mA 40 mA 80 mA Figure 18. Fmin[1] vs. Frequency and Ids at 3V. ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, VDS = 3 V, IDS = 60 mA Freq (GHz) 0.9 2.0 3.9 5.8 Γ Out_Mag.[1] (Mag) 0.017 0.026 0.013 0.025 Γ Out_Ang.[1] (Degrees) 115 -85 173 102 OIP3 (dBm) 35.54 36.23 37.54 35.75 P1dB (dBm) 18.4 20.38 20.28 18.09 Note: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. Note: 1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. 5 ATF-54143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.99 0.83 0.72 0.70 0.65 0.63 0.62 0.61 0.61 0.63 0.66 0.69 0.71 0.72 0.76 0.83 0.85 0.88 0.89 0.87 0.88 0.87 0.87 0.92 Ang. -17.6 -76.9 -114 -120.6 -146.5 -162.1 -165.6 178.5 164.2 138.4 116.5 97.9 80.8 62.6 45.2 28.2 13.9 -0.5 -15.1 -31.6 -46.1 -54.8 -62.8 -73.6 dB 27.99 25.47 22.52 21.86 19.09 17.38 17.00 15.33 13.91 11.59 9.65 8.01 6.64 5.38 4.20 2.84 1.42 0.23 -0.86 -2.18 -3.85 -5.61 -7.09 -8.34 S21 Mag. 25.09 18.77 13.37 12.39 9.01 7.40 7.08 5.84 4.96 3.80 3.04 2.51 2.15 1.86 1.62 1.39 1.18 1.03 0.91 0.78 0.64 0.52 0.44 0.38 S12 Ang. 168.5 130.1 108 103.9 87.4 76.6 74.2 62.6 51.5 31 11.6 -6.7 -24.5 -42.5 -60.8 -79.8 -96.9 -112.4 -129.7 -148 -164.8 -178.4 170.1 156.1 S22 Ang. 80.2 52.4 40.4 38.7 33.3 30.4 29.8 26.6 22.9 14 4.2 -6.1 -17.6 -29.3 -40.6 -56.1 -69.3 -81.6 -95.7 -110.3 -124 -134.6 -144.1 -157.4 Mag. 0.009 0.036 0.047 0.049 0.057 0.063 0.065 0.072 0.080 0.094 0.106 0.118 0.128 0.134 0.145 0.150 0.149 0.150 0.149 0.143 0.132 0.121 0.116 0.109 Mag. 0.59 0.44 0.33 0.31 0.24 0.20 0.19 0.15 0.12 0.10 0.14 0.17 0.20 0.22 0.27 0.37 0.45 0.51 0.54 0.61 0.65 0.70 0.73 0.76 Ang. -12.8 -54.6 -78.7 -83.2 -99.5 -108.6 -110.9 -122.6 -137.5 176.5 138.4 117.6 98.6 73.4 52.8 38.3 25.8 12.7 -4.1 -20.1 -34.9 -45.6 -55.9 -68.7 MSG/MAG dB 34.45 27.17 24.54 24.03 21.99 20.70 20.37 19.09 17.92 16.06 14.57 13.28 12.25 11.42 10.48 9.66 8.98 8.35 7.84 7.36 6.87 6.37 5.81 5.46 Typical Noise Parameters, VDS = 3 V, IDS = 40 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.17 0.22 0.24 0.42 0.45 0.51 0.59 0.69 0.90 1.14 1.17 1.24 1.57 1.64 1.8 Γopt Mag. 0.34 0.32 0.32 0.29 0.29 0.30 0.32 0.34 0.45 0.50 0.52 0.58 0.60 0.69 0.80 Γopt Ang. 34.80 53.00 60.50 108.10 111.10 136.00 169.90 -151.60 -119.50 -101.60 -99.60 -79.50 -57.90 -39.70 -22.20 Rn/50 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.09 0.16 0.18 0.33 0.56 0.87 1.34 Ga dB MSG/MAG and S21 (dB) 40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20 S21 MSG 27.83 23.57 22.93 18.35 17.91 16.39 15.40 13.26 11.89 10.95 10.64 9.61 8.36 7.77 7.68 Figure 19. MSG/MAG and |S21|2 vs. Frequency at 3V, 40 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 6 ATF-54143 Typical Scattering Parameters, VDS = 3 V, IDS = 60 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.99 0.81 0.71 0.69 0.64 0.62 0.62 0.60 0.60 0.62 0.66 0.69 0.70 0.72 0.76 0.83 0.85 0.88 0.89 0.88 0.88 0.88 0.88 0.92 Ang. -18.9 -80.8 -117.9 -124.4 -149.8 -164.9 -168.3 176.2 162.3 137.1 115.5 97.2 80.2 62.2 45.0 28.4 13.9 -0.2 -14.6 -30.6 -45.0 -54.5 -62.5 -73.4 dB 28.84 26.04 22.93 22.24 19.40 17.66 17.28 15.58 14.15 11.81 9.87 8.22 6.85 5.58 4.40 3.06 1.60 0.43 -0.65 -1.98 -3.62 -5.37 -6.83 -8.01 S21 Mag. 27.66 20.05 14.01 12.94 9.34 7.64 7.31 6.01 5.10 3.90 3.11 2.58 2.20 1.90 1.66 1.42 1.20 1.05 0.93 0.80 0.66 0.54 0.46 0.40 S12 Ang. 167.6 128.0 106.2 102.2 86.1 75.6 73.3 61.8 51.0 30.8 11.7 -6.4 -24.0 -41.8 -59.9 -78.7 -95.8 -111.1 -128.0 -146.1 -162.7 -176.6 171.9 157.9 S22 Ang. 80.0 52.4 41.8 40.4 36.1 33.8 33.3 30.1 26.5 17.1 6.8 -3.9 -15.8 -28.0 -39.6 -55.1 -68.6 -80.9 -94.9 -109.3 -122.9 -133.7 -143.2 -156.3 Mag. 0.01 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.08 0.09 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.12 0.11 Mag. 0.54 0.40 0.29 0.27 0.21 0.17 0.17 0.13 0.11 0.10 0.14 0.18 0.20 0.23 0.29 0.38 0.46 0.51 0.55 0.61 0.66 0.70 0.73 0.76 Ang. -14.0 -58.8 -83.8 -88.5 -105.2 -114.7 -117.0 -129.7 -146.5 165.2 131.5 112.4 94.3 70.1 50.6 36.8 24.4 11.3 -5.2 -20.8 -35.0 -45.8 -56.1 -68.4 MSG/MAG dB 34.88 27.84 25.13 24.59 22.46 21.05 20.71 19.34 18.15 16.17 14.64 13.36 12.29 11.45 10.53 9.71 9.04 8.43 7.94 7.43 6.98 6.49 5.95 5.66 Typical Noise Parameters, VDS = 3 V, IDS = 60 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.15 0.20 0.22 0.42 0.45 0.52 0.59 0.70 0.93 1.16 1.19 1.26 1.63 1.69 1.73 Γopt Mag. 0.34 0.32 0.32 0.27 0.27 0.26 0.29 0.36 0.47 0.52 0.55 0.60 0.62 0.70 0.79 Γopt Ang. 42.3 62.8 67.6 116.3 120.1 145.8 178.0 -145.4 -116.0 -98.9 -96.5 -77.1 -56.1 -38.5 -21.5 Rn/50 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.10 0.18 0.20 0.37 0.62 0.95 1.45 Ga dB MSG/MAG and S21 (dB) 40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20 S21 MSG 28.50 24.18 23.47 18.67 18.29 16.65 15.56 13.53 12.13 11.10 10.95 9.73 8.56 7.97 7.76 Figure 20. MSG/MAG and |S21|2 vs. Frequency at 3V, 60 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 7 ATF-54143 Typical Scattering Parameters, VDS = 3 V, IDS = 80 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.98 0.80 0.72 0.70 0.66 0.65 0.64 0.64 0.63 0.66 0.69 0.72 0.73 0.74 0.78 0.84 0.86 0.88 0.89 0.87 0.87 0.86 0.86 0.91 Ang. -20.4 -85.9 -123.4 -129.9 -154.6 -169.5 -172.8 172.1 158.5 133.8 112.5 94.3 77.4 59.4 42.1 25.6 11.4 -2.6 -17.0 -33.3 -47.3 -55.6 -63.4 -74.2 dB 28.32 25.32 22.10 21.40 18.55 16.81 16.42 14.69 13.24 10.81 8.74 7.03 5.63 4.26 2.98 1.51 0.00 -1.15 -2.18 -3.48 -5.02 -6.65 -7.92 -8.92 S21 Mag. 26.05 18.45 12.73 11.75 8.46 6.92 6.62 5.42 4.59 3.47 2.74 2.25 1.91 1.63 1.41 1.19 1.00 0.88 0.78 0.67 0.56 0.47 0.40 0.36 S12 Ang. 167.1 126.8 105.2 101.3 85.4 74.9 72.6 61.1 50.1 29.9 11.1 -6.5 -23.5 -41.1 -58.7 -76.4 -92.0 -105.9 -121.7 -138.7 -153.9 -165.9 -175.9 171.2 S22 Ang. 79.4 53.3 43.9 42.7 38.6 35.7 35.0 30.6 25.5 13.4 1.2 -11.3 -24.5 -38.1 -51.1 -66.8 -79.8 -91.7 -105.6 -119.5 -132.3 -141.7 -150.4 -163.0 Mag. 0.01 0.04 0.05 0.05 0.06 0.07 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.17 0.16 0.16 0.16 0.15 0.14 0.13 0.12 0.11 0.10 Mag. 0.26 0.29 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.33 0.39 0.42 0.44 0.47 0.52 0.59 0.64 0.68 0.70 0.73 0.76 0.78 0.79 0.81 Ang. -27.6 -104.9 -138.8 -144.3 -165.0 -177.6 179.4 164.4 150.2 126.1 107.8 91.8 75.5 55.5 37.8 24.0 11.8 -0.8 -16.7 -31.7 -44.9 -54.9 -64.2 -76.2 MSG/MAG dB 34.16 27.10 24.15 23.63 21.35 19.89 19.52 18.05 16.80 14.76 13.20 11.96 10.97 10.14 9.32 8.60 8.04 7.52 7.12 6.77 6.42 5.99 5.55 5.37 Typical Noise Parameters, VDS = 3 V, IDS = 80 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.19 0.24 0.25 0.43 0.42 0.51 0.61 0.70 0.94 1.20 1.26 1.34 1.74 1.82 1.94 Γopt Mag. 0.23 0.24 0.25 0.28 0.29 0.30 0.35 0.41 0.52 0.56 0.58 0.62 0.63 0.71 0.79 Γopt Ang. 66.9 84.3 87.3 134.8 138.8 159.5 -173 -141.6 -113.5 -97.1 -94.8 -75.8 -55.5 -37.7 -20.8 Rn/50 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.06 0.13 0.23 0.26 0.46 0.76 1.17 1.74 Ga dB MSG/MAG and S21 (dB) 40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20 S21 MSG 27.93 24.13 23.30 18.55 18.15 16.44 15.13 12.97 11.42 10.48 10.11 8.86 7.59 6.97 6.65 Figure 21. MSG/MAG and |S21|2 vs. Frequency at 3V, 80 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-54143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.99 0.81 0.71 0.69 0.64 0.62 0.61 0.60 0.60 0.62 0.65 0.68 0.70 0.72 0.76 0.83 0.86 0.88 0.90 0.87 0.88 0.88 0.87 0.92 Ang. -18.6 -80.2 -117.3 -123.8 -149.2 -164.5 -167.8 176.6 162.6 137.4 115.9 97.6 80.6 62.6 45.4 28.5 14.1 -0.4 -14.9 -31.4 -46.0 -54.8 -62.8 -73.7 dB 28.88 26.11 23.01 22.33 19.49 17.75 17.36 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93 S21 Mag. 27.80 20.22 14.15 13.07 9.43 7.72 7.38 6.07 5.15 3.94 3.16 2.62 2.24 1.94 1.70 1.46 1.24 1.08 0.96 0.82 0.68 0.55 0.46 0.40 S12 Ang. 167.8 128.3 106.4 102.4 86.2 75.7 73.3 61.9 51.1 30.9 11.7 -6.6 -24.3 -42.3 -60.5 -79.6 -97.0 -112.8 -130.2 -148.8 -166.0 179.8 168.4 154.3 S22 Ang. 80.1 52.4 41.7 40.2 36.1 34.0 33.5 30.7 27.3 18.7 9.0 -1.4 -12.9 -24.7 -36.1 -51.8 -65.4 -78.0 -92.2 -107.3 -121.2 -132.2 -142.3 -155.6 Mag. 0.01 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.11 Mag. 0.58 0.42 0.31 0.29 0.22 0.18 0.18 0.14 0.11 0.07 0.09 0.12 0.15 0.17 0.23 0.32 0.41 0.47 0.51 0.58 0.63 0.69 0.72 0.75 Ang. -12.6 -52.3 -73.3 -76.9 -89.4 -95.5 -97.0 -104.0 -113.4 -154.7 152.5 127.9 106.9 78.9 56.8 42.1 29.4 16.0 -1.1 -17.6 -32.6 -43.7 -54.2 -67.2 MSG/MAG dB 35.41 28.14 25.38 24.83 22.75 21.32 21.04 19.64 18.48 16.46 14.96 13.61 12.57 11.67 10.72 9.88 9.17 8.53 7.99 7.46 6.97 6.41 5.85 5.54 Typical Noise Parameters, VDS = 4 V, IDS = 60 mA Freq GHz 0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 Fmin dB 0.17 0.25 0.27 0.45 0.49 0.56 0.63 0.73 0.96 1.20 1.23 1.33 1.66 1.71 1.85 Γopt Mag. 0.33 0.31 0.31 0.27 0.27 0.26 0.28 0.35 0.47 0.52 0.54 0.60 0.63 0.71 0.82 Γopt Ang. 34.30 60.30 68.10 115.00 119.80 143.50 176.80 -145.90 -116.20 -98.80 -96.90 -77.40 -56.20 -38.60 -21.30 Rn/50 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.11 0.19 0.21 0.38 0.64 0.99 1.51 Ga dB MSG/MAG and S21 (dB) 40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20 S21 MSG 28.02 24.12 23.43 18.72 18.35 16.71 15.58 13.62 12.25 11.23 11.02 9.94 8.81 8.22 8.12 Figure 22. MSG/MAG and |S21|2 vs. Frequency at 4V, 60 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-54143 Applications Information Introduction Agilent Technologies’s ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-54143 enhancement mode PHEMT requires about a 0.6V potential between the gate and source for a nominal drain current of 60 mA. Matching Networks The techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications (Consult the Agilent Technologies website for application notes covering specific applications). High pass impedance matching networks consisting of L1/C1 and L4/C4 provide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection at lower frequencies. 10 INPUT Zo C1 Q1 L1 L2 R4 C2 L3 C5 R3 R5 R1 C3 R2 C6 C4 Zo OUTPUT L4 Vdd Figure 1. Typical ATF-54143 LNA with Passive Biasing. Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 also provide a termination for low frequency mixing products. These mixing products are as a result of two or more inband signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are bypassed by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 µF in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current Id. Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0 V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs = 0V. Only when Vgs is increased above Vto, the device threshold voltage, will drain current start to flow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain current Id will be approximately 60 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals. Passive Biasing Passive biasing of the ATF-54143 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of R3 to help keep drain current constant. Resistor R5 (approximately 10kΩ) provides current limiting for the gate of enhancement mode devices such as the ATF-54143. This is especially important when the device is driven to P1dB or PSAT. Resistor R3 is calculated based on desired Vds, Ids and available power supply voltage. R3 = VDD – Vds Ids + IBB p (1) VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current. IBB is the current flowing through the R1/R2 resistor voltage divider network. The values of resistors R1 and R2 are calculated with the following formulas R1 = Vgs IBB p INPUT Zo C1 Q1 L1 L2 L3 C5 R4 C3 R6 C7 Q2 R7 R1 R2 C6 C4 Zo OUTPUT and rearranging equation (5) provides the following formula R1 = IBB VDD V – VB 1 + DD VB (5A) L4 C2 9 (2) R5 ( ) p R2 = (Vds – Vgs) R1 Vgs p (3) Vdd R3 Example Circuit VDD = 5 V Vds = 3 V Ids = 60 mA R4 = 10Ω VBE = 0.7 V Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through resistor R4 to be 3.6V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3 = 23.3 Ω. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds. Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=1450Ω and R2 =1050Ω. R7 is chosen to be 1kΩ. This resistor keeps a small amount of current flowing through Q2 to help maintain bias stability. R6 is chosen to be 10kΩ. This value of resistance is necessary to limit Q1 gate current in the presence of high RF drive level (especially when Q1 is driven to P1dB gain compression point). Example Circuit VDD = 5 V Vds = 3 V Ids = 60 mA Vgs = 0.59V Choose IBB to be at least 10X the normal expected gate leakage current. IBB was chosen to be 2 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 295Ω R2 = 1205Ω R3 = 32.3Ω Active Biasing Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor. Figure 2. Typical ATF-54143 LNA with Active Biasing. An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit’s operation are as follows. VE = Vds + (Ids • R4) R3 = VDD – VE Ids (1) (2) p VB = VE – VBE VB = R1 V R1 + R2 DD p (3) (4) (5) VDD = IBB (R1 + R2) Rearranging equation (4) provides the following formula R2 = R1 (VDD – VB) VB (4A) p 11 ATF-54143 Die Model Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Rg=1.0 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.3375 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.18 nH Betatce= Ls= Rgs=0.25 Ohm Cds=0.27 pF Rc=250 Ohm Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.8 Vbr= Vjr= Is= Ir= Imax= Xti= Eg= N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams= ATF-54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001 GATE Port G Num=1 TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH R=0.001 TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.175 nH R=0.001 TLINP TLINP TL7 TL8 Z=Z2/2 Ohm Z=Z1 Ohm L=5.0 mil L=15.0 mil K=K K=1 C A=0.0000 A=0.0000 C2 F=1 GHz F=1 GHz C=0.159 pF TanD=0.001 TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001 SOURCE Port S2 Num=4 DRAIN Port D Num=3 SOURCE Port S1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.4 nH R=0.001 MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil L L7 L=0.746 nH R=0.001 12 Designing with S and Noise Parameters and the Non-Linear Model The non-linear model describing the ATF-54143 includes both the die and associated package model. The package model includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020 inch thickness printed circuit board vias. When comparing simulation results between the measured S param- eters and the simulated nonlinear model, be sure to include the effect of the printed circuit board to get an accurate comparison. This is shown schematically in Figure 3. For Further Information The information presented here is an introduction to the use of the ATF-54143 enhancement mode PHEMT. More detailed application circuit information is available from Agilent Technologies. Consult the web page or your local Agilent Technologies sales representative. VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil DRAIN SOURCE VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil ATF-54143 SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil GATE VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters. 13 Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the reflection coefficient Go. The designer must design a matching network that will present Go to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Go. If the reflection coefficient of the matching network is other than Go, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |Γs – Γo | 2 Zo (|1 + Γo| 2) (1 - |Γs| 2) Where Rn /Zo is the normalized noise resistance, Γo is the optimum reflection coefficient required to produce Fmin and Γs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Γo as compared to narrower gate width devices. Typically for FETs, the higher Γo usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085. 14 Ordering Information Part Number ATF-54143-TR1 ATF-54143-TR2 ATF-54143-BLK No. of Devices 3000 10000 100 Container 7” Reel 13”Reel antistatic bag Package Dimensions Outline 43 SOT-343 (SC70 4-lead) 1.30 (0.051) BSC 1.30 (.051) REF 2.60 (.102) E E1 1.30 (.051) 0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF 0.85 (.033) A b TYP A1 L θ DIMENSIONS C TYP SYMBOL A A1 b C D E e h E1 L θ MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0 DIMENSIONS ARE IN MILLIMETERS (INCHES) 15 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm 71 71 71 71 Tape Dimensions For Outline 4T P P0 D P2 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 8° MAX. K0 5° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 8.00 ± 0.30 0.255 ± 0.013 5.4 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 0.315 ± 0.012 0.010 ± 0.0005 0.205 ± 0.004 0.0025 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5988-0450EN May 31, 2001 5988-2722EN