H01N60SJ

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Tab 1 2 3 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 1 2 3 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D Features • 1A, 600V, RDS(on)=12Ω@VGS=10V • Low Gate Charge 15nC(Typ.) • Low Crss 4pF(Typ.) • Fast Switching • Improved dv/dt Capability H01N60S Series Symbol: G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt VGS PD Tj, Tstg TL Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100 C) Drain Current (Pulsed) Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 *1 o Parameter H01N60SI / H01N60SJ 600 1 0.6 4 ±30 50 1 2.8 4.5 ±20 2.5 28 0.22 -55 to +150 300 Units V A A A V mJ A mJ V/nS V W W W/°C °C °C Gate-to-Source Voltage (Continue) Total Power Dissipation (TA=25 C) Total Power Dissipation (TC=25 C) Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds o o *1: Repetitive Rating : Pulse width limited by maximum junction temperature *2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25oC H01N60SI, H01N60SJ HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value 4.5 110 Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 2/5 Units °C/W °C/W ELectrical Characteristics (TJ=25°C, unless otherwise specified) Symbol • Off Characteristics VDSS ∆BVDSS/∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced to 25oC) Zero Gate Voltage Drain Current (VDS=600V, VGS=0V) Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C) Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V) Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V) 600 0.6 1 50 100 -100 V V/oC uA uA nA nA Characteristic Min. Typ. Max. Unit • On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3 Forward Transconductance (VDS=40V, ID=0.5A) *3 2 - 0.75 4 12 - V Ω S • Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz 210 19 4 250 25 8 pF • Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=480V, ID=1.1A VGS=10V *3 VDD=300V, ID=1.1A RG=25Ω *3 - 15 4 3 30 60 45 75 20 nC ns • Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage (VGS=0V, IS=1A) Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3 *3 - 190 0.53 1 4 1.4 - A A V ns nC Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H01N60SI, H01N60SJ HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 3/5 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 01N60S Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source N H a5 L a2 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark J 01N60S Control Code Date Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm H01N60SI, H01N60SJ HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension A Tab Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 4/5 M F a1 Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None C G Date Code I 01N60S Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H1 K K1 L M a1 a2 Min. 6.35 4.80 1.30 5.40 6.75 0.50 0.40 0.90 2.20 0.40 - Max. 6.80 5.50 1.70 6.25 8.00 0.90 0.90 1.50 2.40 0.65 *2.30 L K K1 H1 a1 *: Typical, Unit: mm a2 a2 3-Lead TO-251 Plastic Package HSMC Package Code: I A B C D a1 E G Marking: M F y1 a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None I 01N60S Control Code I H y1 y1 Date Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K K1 H1 a2 y2 a2 y2 a1 DIM A B C D E F G H H1 I J K K1 M a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.20 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 *1.80 *9.30 *16.10 *0.80 0.96 *0.76 2.40 0.60 2.50 5o 3o 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H01N60SI, H01N60SJ HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly