H05N60

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel Power Field Effect Transistor H05N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H05N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H05N60E (TO-220AB) PD H05N60F (TO-220FP) Derate above 25°C H05N60E (TO-220AB) H05N60F (TO-220FP) Tj, Tstg EAS TL Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 0.56 0.2 -55 to 150 250 260 °C mJ °C W/°C 75 35 W Value 5 20 ±30 Units A A V H05N60E, H05N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. TO-220AB TO-220FP 62.5 Value Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5 Units 1.3 4 °C/W °C/W ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=2.5A)* Forward Transconductance (VDS=15V, ID=2.5A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) (VDS=480V, ID=5A, VGS=10V)* (VDD=300V, ID=5A, RG=9.1Ω, VGS=10V)* VGS=0V, VDS=25V, f=1MHz Min. 600 2 1.5 Typ. 600 150 15 30 15 40 15 10 6 4 4.5 7.5 Max. 1 50 100 -100 4 2.3 nH nH nC ns pF Unit V uA uA nA nA V Ω mhos *: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Source-Drain Diode Symbol VSD ton trr Forward On Voltage(1) Forward Turn-On Time Reverse Recovery Time Characteristic IS=5A, VGS=0V, TJ=25 C IS=5A, VGS=0V, dIS/dt=100A/us o Min. - Typ. ** 302 Max. 1.6 - Units V ns ns **: Negligible, Dominated by circuit inductance H05N60E, H05N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 10 9 VGS=10V VGS=8V VGS=6V 6 5 VGS=5V 4 3 800 1000 Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5 Capacitance Characteristics ID, Drain-Source Current (A) . … 8 7 Capacitance (pF) Ciss 600 Crss 400 Coss 2 1 0 0 2 4 6 8 10 VGS=4V 0 0.1 1 10 100 200 V DS, Drain-Source Voltage (V) VDS, Deain-Source Voltage (V) On Resistance Variation with Temperature 2.500 2.400 Drain Current Variation with Gate Voltage and Temperature 6 VDS=10 V Tc=25 C o RDS(ON) Normalized Drain-Source On-Resistance VGS=10V 2.200 2.100 2.000 ID, Drain-Source Current (A) . … 2.300 5 4 ID=3A 1.900 1.800 1.700 1.600 1.500 0 25 50 75 100 3 2 1 0 TC, Case Temperature ( C) o 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V GS, Gate-Source Voltage (V) Typical On-Resistance & Drain Current 2.5 10 Maximum Safe Operating Area 1ms RDS(ON) Drain-Source On-Resistance ... 2.4 2.3 VGS=10V ID, Drain Current (A) 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 0 1 2 3 4 5 6 7 8 9 10 11 12 VGS=15V 100ms 10ms 1 0.1 10 100 1000 ID, Drain Current (A) V DS, Drain-Source Voltage (V) H05N60E, H05N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5 E 0 5N6 0 Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α1 D α4 EO C Pb Free Mark Pb-Free: " . " (Note) Normal: None H F 0 5N6 0 Date Code Control Code α2 α3 α5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F 2 K 1 M L DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H05N60E, H05N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly