HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5
H07N60 Series
N-Channel Power Field Effect Transistor
H07N60 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
1 2 3
3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source
1 2 3
D G S
Features
H07N60 Series Symbol:
• Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H07N60E (TO-220AB) H07N60F (TO-220FP) Derate above 25OC H07N60E (TO-220AB) H07N60F (TO-220FP) Operating Temperature Range Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 C (VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
O o
Value 7 28 ±30 110 40 0.58 0.33 -55 to 150 -55 to 150 250 260
Units A A V W W W/°C W/oC
O O
PD
Tj Tstg EAS TL
C C
mJ °C
Note: 1. VDD=50V, ID=10A 2. Pulse Width and frequency is limited by Tj(max) and thermal response
H07N60E, H07N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. TO-220AB TO-220FP 62 Value
Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 2/5
Units 1.7 3.3
O
C/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125 C) Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=3.5A)* Forward Transconductance (VDS=15V, ID=3.5A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the drain lead 0.25” from package to source bond pad) (VDS=480V, ID=7A, VGS=10V)* (VDD=300V, ID=7A, RG=9.1Ω, VGS=10V)* VGS=0V, VDS=25V, f=1MHz
O
Min. 600 2 2 -
Typ. 3 1 1300 180 35 14 19 40 26 45 8.1 14.1 4.5 7.5
Max. 1 50 100 -100 4 1.2 50 -
Unit V uA uA nA nA V Ω S pF
ns
nC
nH nH
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol VSD ton trr Forward On Voltage(1) Forward Turn-On Time Reverse Recovery Time Characteristic IS=7A, VGS=0V, TJ=25oC IS=7A, dIS/dt=100A/us Min. Typ. ** 296 Max. 1.3 Units V ns ns
**: Negligible, Dominated by circuit inductance
H07N60E, H07N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
1.6
Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 3/5
Typical On-Resistance & Drain Current
Drain-Source On-Resistance-RDS(ON)
VGS=10V
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VGS=10V
9
ID, Drain-Source Current (A) .
8 7
VGS=8V VGS=6V
6 5 VGS=5V 4 3 2 1 0 0 2 4 6 8 10 VGS=4
0
1
2
3
4
5
6
7
8
9
10
11
12
VDS, Drain-Source Voltage(V)
Drain Current-ID (A)
Drain Current Variation with Gate Voltage & Temperature
6 VDS=10 V 5
Typical On-Resistance & Drain Current
1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8
Tc= 25°C 4
Drain-Source On-Resistance-RDS(ON)
Drain-Source Current-ID (A)
3
VGS=10V
VGS=15V
2
1
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0
1
2
3
4
5
6
7
8
9
10
11
12
Gate-Source Voltage-VGS (V)
Drain Current-ID (A)
On Resistance Variation with Temperature
2.50
VGS=10 V
Capacitance Characteristics
2000
Normalized Drain-Source OnResistance-RDS(ON)
2.00
1500
Capacitance (pF)
Ciss Coss Crss 500
1.50
ID=3A
1000
1.00
0.50
0.00 0 25 50 75 100 o Case Temperature-Tc ( C) 125 150
0 0.1 1 10 100
VDS, Deain-Source Voltage (V)
H07N60E, H07N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A D B E C F
Pb Free Mark
Pb-Free: " . " (Note) Normal: None H
Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 4/5
E
0 7N6 0 Date Code Control Code
H I G Tab P L J M 3 2 1 O N K
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
DIM A B C D E F G H I J K L M N O P
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
*: Typical, Unit: mm
3-Lead TO-220AB Plastic Package HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α1
D
α4
EO C
Pb Free Mark
Pb-Free: " . " (Note) Normal: None H
F
0 7N6 0 Date Code Control Code
α2
α3
α5
I N 3
G
J
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
F
2 K 1 M L
DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3
Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o
*: Typical, Unit: mm
3-Lead TO-220FP Plastic Package HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-2521-2056 Fax: 886-2-2563-2712 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-598-3621~5 Fax: 886-3-598-2931 H07N60E, H07N60F HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 5/5
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly