HBC546

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/3 HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features • High Breakdown Voltage: 65V • High DC Current Gain: 110-800 at IC=2mA VCE=5V TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 80 V VCEO Collector to Emitter Voltage ...................................................................................... 65 V VEBO Emitter to Base Voltage .............................................................................................. 6 V IC Collector Current ....................................................................................................... 100 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO VBE(on)1 VBE(on)2 *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE fT Cob Min. 80 65 6 580 110 Typ. 700 900 300 Max. 15 770 700 250 600 800 4.5 Unit V V V nA mV mV mV mV mV mV MHz PF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 IC=10mA, VCE=5V IC=2mA, VCE=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank Range HBC546 A 110-220 B 200-450 C 420-800 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 2/3 Saturation Voltage & Collector Current 125 C o Saturation Voltage (mV) 75 C o 75 C 100 o o hFE 125 C 25 C o 25 C VCE(sat) @ IC=20IB o hFE @ VCE=5V 100 0.1 1 10 100 10 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 25 C o Capacitance & Reverse-Biased Voltage 10 125 C o 75 C o Capacitance (pF) ON Voltage (mV) Cob VBE(ON) @ VCE=5V 100 1 10 100 1 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (V) Safe Operating Area 10000 PT=1ms PD-Ta 700 600 Collector Current-IC (mA) 1000 Power Dissipation-PD (mW) PT=100ms PT=1s 500 400 300 200 100 0 100 10 1 1 10 100 0 50 100 o 150 200 Forward Voltage-VCE (V) Ambient Temperature-Ta ( C) HBC546 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 3/3 α2 Marking: H BC 546 Rank Control Code α3 C Style: Pin 1.Collector 2.Base 3.Emitter D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBC546 HSMC Product Specification