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HI3055

HI3055

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HI3055 - NPN EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 数据手册
  • 价格&库存
HI3055 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 1/2 HI3055 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3055 is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 20W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 70 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current ............................................................................................................ 10 A IB Base Current .................................................................................................................... 6 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Min. 70 60 5 20 5 2 Typ. Max. 20 20 50 0.5 1.1 8 1.8 100 Unit V V V uA uA uA mA V V V Test Conditions IC=200mA, IE=0 IC=10mA, IB=0 IE=10mA, IC=0 VCB=70V, IE=0 VCE=70V, VEB(off)=1.5V VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, IB=400mA IC=10A, IB=3.3A VCE=4V, IC=4A VCE=4V, IC=4A VCE=4V, IC=10A VCE=10V, IC=500mA, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% MHz HI3055 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking : HSMC Logo Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 2/2 A B C D Product Series Rank Part Number Date Code Ink Mark F 3 I E K 2 1 G Style : Pin 1.Base 2.Collector 3.Emitter H J 3-Lead TO-251 Plastic Package HSMC Package Code : I *:Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HI3055 HSMC Product Specification
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