HIRF840

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 HIRF840 / HIRF840F N-CHANNEL POWER MOSFET HIRF840 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. 2 3 1 Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF840 Series Symbol D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous)(VGS@10V, TC=25oC) Drain to Current (Pulsed) (*1) Gate-to-Source Voltage (Continue) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy (*2) Avalanche Current (*1) Repetitive Avalanche Energy (*1) Peak Diode Recovery (*3) Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Parameter Value 500 8 32 ±20 74 38 0.59 0.3 510 8 13 3.5 -55 to 150 -55 to 150 300 Units V A A V W PD W/°C mJ A mJ V/ns °C °C °C EAS IAR EAR dv/dt Tj Tstg TL *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=14mH, RG=25Ω, IAS=8A *3: ISD≤8A, di/dt≤100A/us, VDD≤V(BR)DSS, TJ≤150°C HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) o Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 2/4 Min. 500 2 4.9 - Typ. 0.78 1300 310 120 14 23 49 20 4.5 7.5 Max. 25 250 100 -100 4 0.85 63 9.3 32 - Unit V V/oC uA uA nA nA V Ω S pF ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25 C, ID=1mA) IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Drain-Source Leakage Current (VDS=500V, VGS=0V) Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=4.8A)(*4) Forward Transconductance (VDS=50V, ID=4.8A)(*4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS=400V, ID=8A, VGS=10V) (*4) (VDD=250V, ID=8A, RG=9.1Ω, RD=31Ω)(*4) VDS=25V, VGS=0V, f=1MHz - ns nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Source Inductance (Measured from the drain lead 0.25” from package to source bond pad) nH nH *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% Source-Drain Diode Symbol Qrr ton trr VSD Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IS=8A, VGS=0V, Tj=25°C (*4) IF=8A, di/dt=100A/us, Tj=25°C (*4) Characteristic Min. Typ. 4.2 ** 460 Max. Units 8.9 970 2 ns V uC **: Negligible, Dominated by circuit inductance HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 3/4 I RF 840 Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α1 D α4 EO C Pb Free Mark Pb-Free: " . " (Note) Normal: None H I RF 840F Date Code Control Code α2 α3 α5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F 2 K 1 M L DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 α3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HIRF840, HIRF840F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly