HLB123

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 1/4 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126ML Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)................................................................................................. 30 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC) .................................................................................................................. 1 A IC Collector Current (Pulse) .............................................................................................................. 2 A Electrical Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Ton Tstg Toff Min. 600 400 8 10 10 6 Typ. 0.4 2.4 0.3 Max. 10 10 0.8 0.9 1.2 1.8 50 1.1 4 0.7 Unit V V V uA uA V V V V Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30Ma IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% uS uS uS Classification Of hFE1 Rank Range B1 10-17 B2 13-22 B3 18-27 B4 23-32 B5 28-37 B6 33-42 B7 38-47 B8 43-50 HLB123D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 125 C o Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 2/4 Saturation Voltage & Collector Current 10000 25 C 75 C o o Saturation Voltage (mV) 1000 75 C o hFE 10 100 25 C o 125 C o hFE @ VCE=5V VCE(sat) @ IC=10IB 10 1 1 10 100 1000 10000 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 On Voltage & Collector Current 1000 Saturation Voltage (mV) VBE(on) @ VCE=5V 75 C 1000 25 C o o 125 C VBE(s at) @ IC=10IB 100 1 10 100 1000 10000 o On Voltage (mV) 100 1 10 100 1000 Collector Current IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Volatge 100 10.0 Switching Time & Collector Current VCC=100V, IC=5IB1 =-5IB2 10 Cob Switching Time (us) Tstg Capacitance (pF) 1.0 Tf Ton 1 0.1 1 10 100 0.1 0.1 1.0 Reverse-Biased Voltage (V) Collector Current (A) HLB123D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 3/4 Safe Operating Area 10000 Collector Current (mA) 1000 PT=1ms 100 PT=100ms PT=1s 10 1 10 100 1000 Forward Voltage (V) HLB123D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2002.01.07 Page No. : 4/4 A H LB B B D E F 3 2 I G 1 J M L K O H Date Code 123D Control Code Rank would show on label Style: Pin 1.Emitter 2.Collector 3.Base C N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB123D HSMC Product Specification