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HMJE3055T

HMJE3055T

  • 厂商:

    HSMC

  • 封装:

  • 描述:

    HMJE3055T - NPN EPITAXIAL PLANAR TRANSISTOR - Hi-Sincerity Mocroelectronics

  • 数据手册
  • 价格&库存
HMJE3055T 数据手册
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6737-A Issued Date : 1993.09.24 Revised Date : 1999.08.01 Page No. : 1/3 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperature Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ..................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 75 W Total Power Dissipation (Ta=25°C) ................................................................................... 0.6 W • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage ...................................................................................... 70 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current ........................................................................................................... 10 A IB Base Current .................................................................................................................... 6 A Characteristics (Ta=25°C) Symbol BVCEO BVCBO BVEBO ICBO ICEX ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 fT Min. 60 70 5 20 5 2 Typ. Max. 1. 1. 700 5 1.1 8.0 1.8 100 Unit V V V mA mA uA mA V V V Test Conditions IC=200mA, IB=0 IC=10mA, IE=0 IE=10mA, IC=0 VCB=70V, IE=0 VCE=70V, VEB(off)=1.5V VCE=30V, IB=0 VEB=5V, IC=0 IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=4A, VCE=4V IC=10A, VCE=4V VCE=10V, IC=500mA, f=0.5MHz MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 10000 Spec. No. : HE6737-A Issued Date : 1993.09.24 Revised Date : 1999.08.01 Page No. : 2/3 Saturation Voltage & Collector Current hFE @ VCE=4V Saturation Voltage (mV) 1000 VBE (sat) @ IC=10IB hFE 100 VCE (sat) @ IC=10IB 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 10 Switching Time & Collector Current Switching Times (us) On Voltage (mV) 1 Tstg 1000 Ton 0.1 Tf VBE (on) @ VCE=4V 100 1 10 100 1000 10000 0.01 0.1 1.0 10.0 Collector Current (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 100000 Safe Operating Area 10000 Collector Current-IC (mA) Capacitance (pF) 1000 PT=1 ms 100 PT=100 ms PT=1 s 100 Cob 10 10 0.1 1 10 100 1 1 10 100 1000 Reverse-Biased Voltage (V) Forward Voltage-VCE (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking : A D B E C HSMC Logo Part Number Date Code Spec. No. : HE6737-A Issued Date : 1993.09.24 Revised Date : 1999.08.01 Page No. : 3/3 Product Series Rank H I G 4 P M 3 2 1 N K Style : Pin 1.Base 2.Collector 3.Emitter O 3-Lead TO-220AB Plastic Package HSMC Package Code : E *:Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 - Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 - DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 • Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification
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