HSB772S

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 1/4 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature .......................................................................................... -55 to +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 750 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage..................................................................................... -30 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ............................................................................................................. -3 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 400 Unit V V V uA uA V V Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification Of hFE2 Rank Range Q 100-200 P 160-320 E 200-400 HSB772S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 2/4 Saturation Voltage & Collector Current 10000 VCE(s at) @ IC=5IB 75 C o 25 C o Saturation Voltage (mV) 1000 75 C 100 o hFE 100 hFE @ VCE=2V 125 C 10 25 C o o 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=10IB Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=20IB Saturation Voltage (mV) Saturation Voltage (mV) 1000 75 C 100 125 C 10 o o 1000 75 C o o 25 C o 100 125 C o 25 C 10 1 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=40IB 1000 75 C o Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=10IB Saturation Voltage (mV) Saturation Voltage (mV) 75 C 1000 25 C o o 100 125 C 25 C o o 10 125 C o 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) HSB772S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 3/4 Cutoff Frequency & Collector Current 1000 1000 Capacitance & Reverse-Biased Voltage Cutoff Frequency (MHz).. . 100 VCE=5V Capacitance (pF) 100 Cob 10 10 1 1 10 100 1000 1 0.1 1 10 100 Collector Current (mA) Reverse-Biased Voltage (V) Safe Operation Area 100 PT=1ms Power Derating 800 700 Collector Current (A ) 10 Power Dissipation-PD (mW) 10 100 PT=100ms 600 500 400 300 200 100 1 PT=1s 0.1 0.01 1 0 0 50 100 o 150 200 Forward Biased Voltage (V) Ambient Temperature-Ta ( C) HSB772S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 4/4 α2 Marking: H SB 772S Rank Control Code α3 C Style: Pin 1.Emitter 2.Collector 3.Base D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB772S HSMC Product Specification