HSC945

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 1/4 HSC945 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 60 V VCEO Collector to Emitter Voltage ...................................................................................... 50 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current........................................................................................................ 100 mA IB Base Current ................................................................................................................ 50 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 60 50 5 50 135 150 Typ. 0.1 Max. 100 100 0.3 600 600 4 Unit V V V nA nA V Test Conditions IC=100uA, IE=0 IC=1mA. IB=0 IE=10uA. IC=0 VCB=60V, IE=0 VEB=5V, IB=0 IC=100mA, IB=10mA VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification of hFE2 Rank Range Q 135-270 P 200-400 K 300-600 HSC945 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 VCE(sat) @IC=10IB Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 2/4 Saturation Voltage & Collector Current 125 C Saturation Voltage (mV) o hFE 100 75 C o 25 C o 75 C o 125 C o o 25 C hFE @ VCE=6V 100 1 10 100 10 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 On Voltage & Collector Current 1 25 C o Saturation Voltage (mV) VBE(sat) @ IC=10IB 75 C 125 C o o VBE(sat) @ IC=10IB 100 0.1 1 10 100 On Voltage (mV) 0.1 0.1 1 10 100 Collector Current-IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 10 Cutoff Frequency & Collector Current 1000 Cutoff Frequency (MHz).. . Capacitance (Pf) fT @ VCE=5V 100 Cob 1 0.1 1 10 100 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) HSC945 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 3/4 Safe Operating Area 10000 PT=1ms 1000 PT=100ms PD-Ta 300 Power Dissipation-PD (mW) 250 Collector Current (mA ) 200 PT=1s 100 150 100 10 50 1 1 10 100 0 0 50 100 o 150 200 Forward Voltage (mV) Ambient Temperature-Ta( C) HSC945 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6517 Issued Date : 1995.02.11 Revised Date : 2002.12.16 Page No. : 4/4 α2 Marking: H SC 945 Rank Control Code α3 C Style: Pin 1.Emitter 2.Collector 3.Base D H I E F G α1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC945 HSMC Product Specification