2SA1611

2SA1 61 1 TRANSISTOR(PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -100 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat) VBE fT Cob Test IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-1mA IC=-100mA, IB=-10mA VCE=-6V, IC=-1mA VCE=-6V,Ic=-10mA VCB=-10V, IE=0, f=1MHz -0.58 180 4.5 90 conditions Min -60 -50 -5 -100 -100 600 -0.3 -0.68 V V MHz pF Typ Max Unit V V V nA nA *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK RANGE MARKING M4 90–180 M4 M5 135–270 M5 M6 200–400 M6 M7 300–600 M7 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５