2SD602

2SD602 TRANSISTOR (NPN) FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 500 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ SOT–23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * hFE(2) * VCE(sat)* fT Cob Test conditions Min 30 25 5 0.1 0.1 85 40 0.6 200 15 V MHz pF 340 Typ Max Unit V V V µA µA IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=10V, IC=0.15A VCE=10V, IC=0.5A IC=0.3A, IB=0.03A VCE=10V,IC=0.05A, f=200MHz VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK RANGE MARKING Q 85–170 WQ1 R 120–240 WR1 S 170–340 WS1 １　 JinYu semiconductor www.htsemi.com