B5817W

B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Ambient Resistance Junction to Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RθJA TSTG SOD-123 + - B5817W 20 20 14 B5818W 30 30 21 1 9 1.5 500 250 -65~+150 B5819W 40 40 28 Unit V V V A A A mW ℃/W ℃ Storage temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol V(BR) Test IR= 1mA conditions B5817W B5818W B5819W B5817W B5818W B5819W IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A MIN 20 30 40 MAX UNIT V Reverse voltage leakage current IR VR=20V VR=30V VR=40V B5817W B5818W B5819W 1 0.45 0.75 0.55 0.875 0.6 0.9 120 mA V V V Forward voltage VF Diode capacitance CD VR=4V, f=1MHz pF １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ B5817W-5819W Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５