BAS40

BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES Low Forward Voltage Fast Switching SOT-23 BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44 Maximum Ratings @TA=25℃ Parameter Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage Forward continuous Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction temperature Storage temperature range Symbol VRRM VRWM VR IFM PD RθJA TJ TSTG 200 200 625 125 -65-125 mA mW ℃/W ℃ ℃ 40 V Limits Unit ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Symbol V(BR) IR VF CD t rr Test IR= 10μA VR=30V IF=1mA IF=40mA VR=0,f=1MHz Irr=1mA, IR=IF=10mA RL=100Ω conditions MIN 40 200 380 1000 5 5 MAX UNIT V nA mV Diode capacitance Reverse Recovery time pF nS １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAS40/-04/-05/-06 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５