BC858B

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value -80 -50 -30 -65 -45 -30 -5 -0.1 200 150 -65-150 V A mW ℃ ℃ Units 1. BASE 2. EMITTER 3. COLLECTOR Collector-Base Voltage BC856 BC857 BC858 Collector-Emitter Voltage V VCEO BC856 BC857 BC858 VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature BC856A=3A; BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L V DEVICE MARKING １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856A,B BC857A, B,C BC858A, B,C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC856 BC857 BC858 Collector-emitter breakdown voltage BC856 BC857 BC858 Emitter-base breakdown voltage Collector cut-off current BC856 BC857 BC858 Collector cut-off current BC856 BC857 BC858 Emitter cut-off current DC current gain BC856A, 857A,858A BC856B, 857B,858B BC857C,BC858C Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector capacitance VCE(sat) VBE(sat) IC=-100mA, IB= -5 mA IC= -100mA, IB= -5mA VCE= -5 V, IC= -10mA hFE VCE= -5V, IC= -2mA IEBO ICEO ICBO VEBO IE= -1μA, IC=0 VCB= -70 V , IE=0 VCB= -45 V , IE=0 VCB= -25 V , IE=0 VCE= -60 V , IB=0 VCE= -40 V , IB=0 VCE= -25 V , IB=0 VEB= -5 V , IC=0 125 220 420 -0.1 250 475 800 -0.5 -1.1 100 4.5 V V MHz pF -0.1 -0.1 VCEO IC= -10mA, IB=0 VCBO IC= -10μA, IE=0 Symbol Test conditions MIN -80 -50 -30 -65 -45 -30 -5 V V V MAX UNIT μA μA μA fT Cob f=100MHz VCB=-10V, f=1MHz ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856A,B BC857A, B,C BC858A, B,C Typical Characteristics ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856A,B BC857A, B,C BC858A, B,C ４　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC856 57 58 88 ５　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５