BFS20

BFS20 TRANSISTOR (NPN) SOT–23 FEATURES  Very Low Feedback Capacitance  Low Current  Low Voltage APPLICATIONS  IF and VHF Applications in Thick and Thin-Film Circuits 1. BASE 2. EMITTER 3. COLLECTOR MARKING:G11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 20 4 25 250 500 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE fT Cob Test conditions Min 30 20 4 0.1 0.1 0.1 40 120 0.3 0.9 275 1 V V MHz pF Typ Max Unit V V V µA µA µA IC=100µA, IE=0 IC=0.1mA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=15V, IB=0 VEB=4V, IC=0 VCE=10V, IC=7mA IC=10mA, IB=1mA VCE=10V, IC=7mA VCE=10V,IC=5mA, f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５