CXT5551

CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180v) Marking: 1G6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 180 160 6 0.6 0.5 150 -65-150 Units V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTER 1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob NF Test conditions MIN 180 160 6 50 50 80 80 30 0.15 0.2 1 1 100 6 8 V V V V MHz pF dB 300 TYP MAX UNIT V V V nA nA IC=100μ A,IE=0 IC=1mA,IB=0 IE=10 μ A,IC=0 VCB=120V,IE=0 VEB=4V,IC=0 VCE=5V,IC=1mA VCE=5V,IC=10mA VCE=5V,IC=50mA IC=10mA,IB=1mA IC=50mA,IB=5mA IC=10mA,IB=1mA IC=50mA,IB=5mA VCE=10V,IC=10mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Ic=0.2mA, f=10Hzto15.7KHZ,Rs=10Ω Base-emitter voltage Transition frequency Collector output capacitance Noise figure １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ CXT5551 Typical Characteristosc ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５