FCX591

FCX591 TRANSISTOR (PNP) SOT-89 FEATURES Power dissipation 1. BASE 2. COLLECTOR 1 2 3 MARKING:P1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -60 -5 -1 0.5 150 -65-150 Units V V V A W ℃ ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector- Emitter cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO ICES Test conditions MIN -80 -60 -5 -0.1 -0.1 -0.1 100 100 80 15 300 MAX UNIT V V V μA μA μA IC=-100μA , IE=0 IC= -10mA , IB=0 IE=-100μA, IC=0 VCB=-60 V , IE=0 VEB=-4 V , IC=0 VCES=-60 V, IE=0 VCE=-5V, VCE=-5V, VCE=-5V, VCE=-5V, IC= -1mA IC= -500mA IC= -1A IC= -2A DC current gain hFE* Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) * VBE(sat) * VBE* fT Cob IC=-500 mA, IB= -50mA IC=-1A, IB= -100mA IC=-1A, IB= -100mA VCE=-5V, IC= -1A 150 -0.3 -0.6 -1.2 -1 V V V MHz VCE= -10V, IC=- 50mA f =100MHz VCB=-10V, f=1MHz 10 pF *Pulse width=300s. Duty cycle 2% １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ FCX591 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５