FMMT4124

FMMT4124 TRANSISTOR (NPN) SOT–23 FEATURES  Switching Application MARKING:ZC MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 200 330 378 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Emitter input capacitance *Pulse test Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO hFE(1) * hFE(2) * VCE(sat)* VBE(sat)* fT Cob CIb Test conditions Min 30 25 5 50 50 120 60 0.3 0.95 300 4 8 V V MHz pF pF 360 Typ Max Unit V V V nA nA IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VEB=3V, IC=0 VCE=1V, IC=2mA VCE=1V, IC=50mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=20V,IC=10mA, f=100MHz VCB=5V, IE=0, f=140KHz VBE=0.5V, IE=0, f=140KHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５