GS1M

M1 • • • • THRU M7 Features For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals 1 Amp Silicon Rectifier 50 to 1000 Volts SMAE A Cathode Band • Operating Temperature: -65 °C to +175°C • Storage Temperature: -65°C to +175°C • Maximum Thermal Resistance; 15 °C/W Junction To Lead Maximum Reccurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum Ratings Device Marking M1 M2 M3 M4 M5 M6 M7 B G C F H E D DIMENSIONS Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 75°C current Peak Forward Surge IFSM 50A 8.3ms, half sine, Current TJ = 150°C Maximum IFM = 1.0A; Instantaneous VF 1.1V TJ = 25°C* Forward Voltage Maximum DC Reverse Current At IR 10µA TJ = 25°C Rated DC Blocking 50µA TJ = 125°C Voltage Maximum Reverse Trr IF=0.5A, IR=1.0A, 1.8µs Recovery Time Irr=0.25A CJ Typical Junction 15pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% DIM A B C D E F G H INCHES MIN 0.157 0.100 0.078 0.194 0.055 0.006 0.030 MAX 0.177 0.110 0.096 0.222 0.071 0.008 0.012 0.060 MM MIN 3.99 2.54 1.98 4.93 1.40 0.152 0.76 MAX 4.50 2.80 2.42 5.56 1.80 0.203 0.305 1.52 NOTE １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ GS1A THRU GS1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 Amps 1.4 1.2 1.0 .8 .6 .4 Resistive or .2 Inductive Load 0 0 20 40 60 80 100 120 140 160 180 200 °C Figure 2 Junction Capacitance Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 25°C 1 10 Cycles 100 Amps 36 30 24 18 12 6 -65°C to +175°C Figure 3 Maximum Overload Surge Current Peak Forward Current - Amperesversus Number of Cycles at 60Hz Figure 4 Forward Derating Curve 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Median Typical Distribution Junction Capacitance - pFversus Reverse Junction Potential (Applied V + 0.7 Volts) - Volts ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ GS1A THRU GS1M Figure 5 Peak Forward Surge Current 1000 600 400 200 Amps 100 60 40 20 10 .01 .02 .06 .1 .2 mS Peak Forward Surge Current - Amperesversus Pulse Duration - Milliseconds (mS) .6 1 2 6 10 Round Lead Process Figure 6 New SMB Assembly ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５