HM879

HM879 TRANSISTOR (NPN) FEATURES High Current Low Voltage General Purpose Amplifier Applications SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MARKING:879 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 10 6 3 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Min 30 10 6 100 100 140 0.4 1.5 200 30 V V MHz pF Typ Max Unit V V V nA nA IC=10µA,IE=0 IC=1mA,IB=0 IE=10µA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=2V, IC=3A IC=3A,IB=60mA VCE=1V, IC=2A VCE=10V,IC=50mA VCB=10V, IE=0, f=1KHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５