KTA1504

KTA1504 TRANSISTOR (PNP) SOT–23 FEATURES  Complementary to KTC3875  Low Noise  Excellent hFE Linearity 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -50 -50 -5 -150 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V,IC=-1mA, VCB=-10V, IE=0, f=1MHz 80 7 70 conditions Min -50 -50 -5 -0.1 -0.1 400 -0.3 V MHz pF Typ Max Unit V V V µA µA IC=-100µA, IE=0 CLASSIFICATION OF hFE RANK RANGE MARKING O 70–140 ASO Y 120–240 ASY GR 200–400 ASG １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５