KTA2015

KTA2015 TRANSISTOR (PNP) FEATURES  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -35 -30 -5 -500 100 1250 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCB=-6V,IC=-20mA , VCB=-6V, IE=0, f=1MHz 200 13 70 25 -0.25 -1 V V MHz pF conditions Min -35 -30 -5 -0.1 -0.1 240 Typ Max Unit V V V µA µA CLASSIFICATION OF hFE(1), hFE(2) RANK RANG hFE(1) hFE(2) MARKING ZO ZY O(2) 70–140 Y(4) 120–240 25Min ZO 40Min ZY O Y １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５