KTC3876

KTC3876 TRANSISTOR (NPN) FEATURES · High hFE · Complementary to KTA1505 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 5 500 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 DC current gain hFE2 Collector-emitter saturation voltage base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE fT Cob Test IC=100μA, IE=0 IC= 1mA, IB=0 IE= 100μA, IC=0 VCB= 35V, IE=0 VEB= 5V, IC=0 VCE=1V, IC= 100mA VCE=6V, IC= 400mA O Y IC=100mA, IB= 10mA VCE=1V, IB= 100mA VCE=6V, IC=20mA 300 7 70 25 40 0.25 1 V V MHz pF conditions MIN 35 30 5 0.1 0.1 400 TYP MAX UNIT V V V μA μA VCB=6V,IE=0,f=1MHZ CLASSIFICATION OF hFE Rank Range Marking O 70-140 WO Y 120-240 WY GR(G) 200-400 WG １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3876 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５