KTD1302

KTD1302 TRANSISTOR (NPN) FEATURES Small Flat Package Audio Muting Application High Emitter-Base Voltage SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 25 20 12 300 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) (FOR) hFE(2)(REV) VCE(sat) VBE(sat) Cob fT Test conditions Min 25 20 12 100 100 200 20 0.25 1 10 60 V V pF MHz 800 Typ Max Unit V V V nA nA IC=0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=25V,IE=0 VEB=12V,IC=0 VCE=2V, IC=4mA VCE=2V, IC=4mA IC=100mA,IB=10mA IC=100mA,IB=10mA VCB=10V,IE=0, f=1MHz VCE=10V,IC=1mA, f=100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５