KTD1304

KTD1304 TRANSISTOR (NPN) FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 20 12 0.3 0.2 150 -55-150 Units V V V A W ℃ ℃ SOT-23 1. BASE 2. EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(FOR) DC current gain hFE(REV) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency output capacitance On resistance VCE(sat) VBE(sat) VCE= 2V, IC= 4mA IC= 100mA, IB=10 mA IC= 100mA, IB=10mA VCE=10V, IC= 1mA 60 10 0.6 20 0.25 1 V V MHz Test conditions IE=0 MIN 25 20 12 0.1 0.1 200 1000 TYP MAX UNIT V V V IC=100μA, IC=1mA, IB=0 IE=100μA, IC=0 VCB=25 V, IE=0 VEB=12V, IC=0 VCE=2V, IC=4 mA μA μA fT f=100MHz VCB=10V,IE=0,f=1MHz Vin=0.3V,IB=1mA,f=1KHZ Cob R(on) pF Ω １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTD1304 Typical characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５