KTD1898

KTD189 TRANSISTOR (NPN) FEATURES Small Flat Package General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 100 80 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions Min 100 80 5 1 1 70 20 100 400 0.4 V pF MHz Typ Max Unit V V V µA µA IC=0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=80V,IE=0 VEB=4V,IC=0 VCE=3V, IC=500mA IC=500mA,IB=20mA VCB=10V,IE=0, f=1MHz VCE=10V,IC=50mA, f=100MHz CLASSIFICATION OF hFE RANK RANGE MARKING O 70–140 ZO Y 120–240 ZY GR 200–400 ZG １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５