MMBT2222A

MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Value 75 40 6 600 250 500 150 -55to+150 Units V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO * Test conditions Min 75 40 6 Typ Max Unit V V V IC= 10μA, IE=0 IC= 10mA, IB=0 IE=10μA, IC=0 VCB=60V, IE=0 VCE=30V,VBE(off)=3V VEB= 3V, IC=0 V(BR)EBO ICBO ICEX IEBO hFE(1) * 0.01 0.01 0.1 100 40 42 1 0.3 2.0 1.2 300 10 25 225 60 300 μA μA μA VCE=10V, IC= 150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA * * DC current gain hFE(2) hFE(3) * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. VCE(sat) VBE(sat) fT td tr tS tf IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA V V MHz nS nS nS nS １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT2222A ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５