MMBTA05

MMBTA05 TRANSISTOR(NPN) SOT-23 FEATURES Driver transistor MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 4 0.5 300 150 -55-150 Units V V V A mW ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 DC current gain hFE2 Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE fT VCE=1V, IC= 100mA IC=100mA, IB=10mA VCE=1V, IC= 100mA VCE= 2V, IC=10mA 100 100 0.25 1.2 V V MHz Test conditions MIN 60 60 4 0.1 0.1 0.1 100 400 TYP MAX UNIT V V V IC= 100μA, IE=0 IC= 1mA, IB=0 IE=100μA, IC=0 VCB=60V, IE=0 VCE=60V, IB=0 VEB=3V, IC=0 VCE=1V, IC= 10mA μA μA μA Transition frequency f=100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA05 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５