MMBTA14

MMBTA13,14 TRANSISTOR (NPN) FEATURES Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Value 30 30 10 0.3 300 417 150 -55 to +150 Units V V V A mW ℃/W ℃ ℃ SOT-23 Unit : mm 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO* IEBO* hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat)* VBE (sat) * VBE * fT Cob Test conditions IE=0 MIN 30 30 10 0.1 0.1 MMBTA13 MMBTA14 VCE=5V, IC= 100mA MMBTA13 MMBTA14 IC=100mA, IB=0.1mA IC=100mA, IB=0.1mA VCE=5V,IC= 100mA VCE=5V, IC= 10mA 5000 10000 10000 20000 1.5 2 2.0 125 12 V V V MHz pF MAX UNIT V V V IC= 100μA, IC= 100uA, IB=0 IE= 100μA, IC=0 VCB=30 V , IE=0 VEB= 10V , IC=0 μA μA VCE=5V, IC= 10mA f=100MHz VCB=10V,IE=0,f=1MHz * Pulse Test : pulse width≤300μs,duty cycle≤2%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA13,14 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA13,14 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５