MMBTA92

MMBTA92 TRANSISTOR(PNP) SOT-23 FEATURES High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg RӨJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, junction to Ambient Parameter Value -300 -300 -5 -300 300 150 -55-150 410 Units V V V mA mW ℃ ℃ ℃/mW 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Test conditions MIN -300 -300 -5 -0.25 -0.1 60 100 60 -0.2 -0.9 50 V V MHz 200 MAX UNIT V V V IC= -100μA, IE=0 IC= -1mA, IB=0 IE= -100μA, IC=0 VCB=-200V, IE=0 VEB= -5V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC=-10mA VCE= -10V, IC=-30mA IC=-20mA, IB= -2mA IC= -20mA, IB= -2mA VCE=-20V, IC= -10mA μA μA fT f=30MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA92 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５