MMSTA92

MMSTA92 TRANSISTOR(PNP) FEATURES  Small Surface Mount Package  Complementary to MMSTA42  Ideal for Medium Power Amplification and Switching MARKING:K3R MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -310 -305 -5 -300 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Test IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-200V, IE=0 VCE=-200V, IB=0 VCE=-300V, IB=0 VEB=-5V, IC=0 VCE=-10V, IC=-1mA DC current gain hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-20V,IE=-10mA , f=30MHz VCB=-20V, IE=0, f=1MHz 50 6 60 100 60 -0.2 -0.9 V V MHz pF 200 conditions Min -310 -305 -5 -250 -250 -5 -100 Typ Max Unit V V V nA nA µA nA IC=-100µA, IE=0 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５