SI2300

SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S OT-23(PACKAGE) S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10 ° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM TA = 25 C o o 20 ± 12 2.3 8 1.25 0.8 -55 to 150 78 o V A Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) TA = 75 C PD TJ, Tstg RθJA W o C C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SI2300 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Static 3) Symbol Test Condition Min. Typ. Miax. Unit Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic 4) BVDSS VGS = 0V, ID = 250uA RDS(on) VGS = 2.5V, ID = 2.0A RDS(on) VGS = 4.5V, ID = 3.0A VGS(th) VDS =VGS, ID = 250uA IDSS IGSS gfs VDS = 20V, VGS = 0V VGS = ± 12V, VDS = 0V VDS = 5V, ID = 4.2A 20 70.0 60.0 0.6 0.76 1 ±100 5 80.0 70.0 V mΩ V uA nA S Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 10V, ID = 3.6A VGS = 4.5V 5.4 0.65 1. .5 12 10 nC 25 60 60 25 ns VDD = 10V, RG = 6Ω ID = 1A, VGS = 4.5V RL = 5.5 Ω VDS = 10V, VGS = 0V f = 1.0 MHz 36 34 10 340 115 33 pF IS VSD IS = 1.6A, VGS = 0V 1.6 1.2 A V Notes 3) Short duration test pulse used to minimize self-heating effect. 4) Pulse test pulse width