SK35B

SK32B THRU SK310B • • • • • Features For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals\ High Current Capability With Low Forward Voltage 3 Amp Schottky Rectifier 20 to 100 Volts DO-214AA SMB H Cathode Band • • • Maximum Ratings Device Marking Operating Temperature: -55 °C to +125°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 10°C/W Junction To Lead Catalog Number SK32B SK33B SK34B SK35B SK36B SK38B SK310B Maximum Reccurrent Peak Reverse Voltage 20V 30V 40V 50V 60V 80V 100V Maximum RMS Voltage 14V 21V 28V 35V 42V 56V 70V Maximum DC Blocking Voltage 20V 30V 40V 50V 60V 80V 100V J SK32B SK33B SK34B SK35B SK36B SK38B SK310B A C E F G D B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage SK32B-34B SK35B-36B SK38B-310B DIMENSIONS INCHES MIN .078 .075 .002 ----.035 .065 .205 .160 .130 MM MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30 IF(AV) IFSM 3.0A 100A TJ = 120°C 8.3ms, half sine DIM A B C D E F G H J MAX .116 .089 .008 .02 .055 .091 .224 .180 .155 MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94 NOTE VF .50V .75V .85V IFM = 3.0A; TJ = 25°C* SUGGESTED SOLDER PAD LAYOUT 0.090" Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance IR .5mA 20mA 45pF TJ = 25°C TJ = 100°C Measured at 1.0MHz, VR=4.0V 0.085” CJ *Pulse test: Pulse width 200 µsec, Duty cycle 2% 0.070” １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SK32B THRU SK310B Figure 1 Typical Forward Characteristics 100 60 40 20 SK32B-SK34B 10 6 4 2 Amps 1 .5 .6 .4 .2 .1 .06 .04 .02 .01 .2 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 1000 SK35B-SK310B 600 400 SK32B-34B 200 pF 100 60 40 20 10 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C 1.0 1.2 1.4 25°C 0 Single Phase, Half Wave 60Hz Resistive or Inductive Load 40 60 80 100 °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 120 140 160 1.5 Amps 1.0 SK35B-SK38B 2.0 2.5 SK32B - 34B SK35B-310B 3.0 Figure 2 Forward Derating Curve Junction Capacitance - pFversus Reverse Voltage - Volts ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SK32B THRU SK310B Figure 4 Typical Reverse Characteristics 10 6 4 2 1 .6 75 .4 .2 µ Amps .1 0 .06 .04 .02 .01 .006 .004 .002 .001 20 40 60 80 Volts Instantaneous Reverse Leakage Current - MicroAmperes ersus v Percent Of Rated Peak Reverse Voltage - Volts 100 120 140 SK32B-34B SK35B-310B 1 2 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 Amps 25°C 50 25 Figure 5 Peak Forward Surge Current 150 125 100 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５