UMF5

UMF5N General purpose transistors (dual transistors) FEATURES 2SA2018 and DTC144E are housed independently in a package. Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. SOT-363 1 Marking: F5 Equivalent circuit (3) (2) (1) DTr2 R2 (4) R1 Tr1 (5) (6) Tr1 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -500 150 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-15V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IE=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz 260 6.5 270 conditions Min -15 -12 -6 -0.1 -0.1 680 -0.25 V MHz pF Typ Max Unit V V V μA μA 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 UMF5N Tr2 Absolute maximum ratings(Ta=25℃) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~+40 30 100 150 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 68 32.9 0.8 47 1 250 61.1 1.2 MHz KΩ 3.0 0.1 0.3 0.18 0.5 Min. Typ Max. 0.5 Unit V V mA μA Conditions VCC=5V, IO=100μA VO=0.3V, IO=2mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V, IO=5mA VCE=10V, IE=-5mA, f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05