H1008

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H1008 █ █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………800mW VCBO——Collector-Base Voltage ………………………………80V VCEO——Collector-Emitter Voltage……………………………60V V EB O —— Emitter-Base Voltage ……………………………… 8V I C —— Collector Current …………………………………… 700mA 1―Emitter，E 2―Base，B 3―Collector， C TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO fT Cob 100 100 40 0.2 0.86 80 60 8 30 50 8 400 0.4 1.1 nA nA V V V V V MHz pF VCB=60V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA IC=500mA, IB=50mA IC=500mA, IB=50mA IC=100μA, IE=0 IC=10mA, IB=0 IE=10μA，IC=0 VCE=10V, IC=50mA VCB=10V, IE=0，f=1MHz Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance █ hFE Classification R 40—80 O 70—140 Y 120—240 GR 240—400 Shantou Huashan Electronic Devices Co.,Ltd. H1008