H5342

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5342 █ APPLICATIONS Medium power amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………32V V EB O —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………500mA 1―Emitter，E 2―Collector， C 3―Base，B TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO HFE fT Cob 40 32 5 0.1 0.1 70 300 7.0 240 0.25 V V V μA μA V MHz pF IC=100μA，IE=0 IC=1mA，IB=0 IE=10μA，IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=6V, IE=-20mA VCB=6V,IE=0，f=1MHz VCE(sat） Collector- Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacacitance █ hFE Classification O 70—140 Y 120—240 Shantou Huashan Electronic Devices Co.,Ltd. H5342