HFP75N08

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 █ APPLICATIONSL Low Voltage high-Speed Switching. TO-220 █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature …………………………… - 55~175 ℃ Tj ——Operating Junction Temperature …………………………150℃ （ …………………173W PD —— Allowable Power Dissipation Tc=25℃） VDSS —— Drain-Source Voltage ………………………………… 80V VGSS — — Gate-Source Voltage … ……………………………… ±20V （ ……………………………………75A ID —— Drain Current Tc=25℃） 1―G 2―D 3―S █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate –Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 80 10 2.0 2600 940 210 30 225 165 155 80 15 32 75 1.5 0.87 ±100 4.0 0.011 0.014 3380 1220 275 70 460 340 320 105 V μA nA V Ω pF pF pF nS nS nS nS nC nC nC ID=250μA ,VGS=0V VDS = 80V，VGS=0 VGS=±20V , VDS =0V VDS = VGS , ID =250μA VGS=10V, ID =37.5A VDS =25V, VGS=0,f=1MHz VDD =40V, ID =75A RG= 25 Ω* VDS =48V VGS=10V ID=50A* IS =75A , VGS=0 Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Continuous Source Current A V ℃/W Diode Forward Voltage Thermal Resistance， Rth j-c） （ Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle≤2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP75N08