Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU2N60
█ APPLICATIONSL
High-Speed Switching.
T O-251
█ ABSOLUTE MAXIMUM RATINGS( Ta=25℃)
T stg ——Storage Temperature……………………………-55~150 ℃ T j ——Operating Junction Temperature …………………………150℃ PD —— Allowable Power Dissipation(T c=25℃)…………………44W VDSS —— Drain-Source Voltage ………………………………… 600V VGSS —— Gate-Source Voltage …………………………………± 0V 3 ID —— Drain Current T c=25℃) ( ……………………………………1.8A
1―G 2―D 3―S
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions
BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time
Turn - Off Delay Time
600 2.5
3.8 2.05 180 20 4.3 9 25 24 28 8.5 1.3 4.1
10
V ID=250μA ,VGS=0V μA VDS =600V,VGS=0
±100 nA VGS=±30V , VDS = 0V 4.5 V VDS = VGS , ID =250μ A 5.0 235 25 3 28 60 58 66 12 Ω VGS=10V, ID =1.0A S VDS = 40V , ID =1.0A * pF pF pF nS nS nS nS
nC nC nC
VDS =25V, VGS=0,f=1MHz VDD =300V, ID =2A RG= 25 Ω * VDS =480V VGS=10V ID=2A * IS =1.8A , VGS=0
Fall Time
Total Gate Charge Gate– Source Charge Gate– Drain Charge
Continuous Source Current
1.8 1.4
A V
Diode Forward Voltage Thermal Resistance, Rth j-c) ( Junctio n-to-Case *Pulse Test:Pulse Width≤300μs,Duty Cycle ≤2%
2.87 ℃/W
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU2N60
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFU2N60
很抱歉,暂时无法提供与“HFU2N60”相匹配的价格&库存,您可以联系我们找货
免费人工找货