IC62C1024AL-70WI

IC62C1024AL Document Title 128K x 8 Low Power CMOS SRAM Revision History Revision No 0A History Initial Draft Draft Date May 7,2002 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 1 IC62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW (typical) • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply DESCRIPTION The ICSI IC62C1024AL is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using I CSI 's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IC62C1024L is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 512 x 2048 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. 2 Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 IC62C1024AL PIN CONFIGURATION 32-Pin SOP and DIP NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 PIN CONFIGURATION 32-Pin 8x20mm TSOP-1 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 PIN DESCRIPTIONS A0-A16 CE1 CE2 OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to + 70°C –40°C to + 85°C VCC 5V ± 10% 5V ± 10% TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 3 IC62C1024AL ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to + 7.0 –45 to + 85 –65 to + 150 1.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.4 — 2.2 –0.3 –2 –10 –2 –10 Max. — 0.4 VCC + 0.5 0.8 2 10 2 10 Unit V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC Com. Ind. Com. Ind. Notes: 1. VIL = –3.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. -35 ns Min. Max. — — — — — — 100 110 10 15 500 750 -45 ns Min. Max. — — — — — — 90 100 10 15 500 750 -55 ns Min. Max. — — — — — — 80 90 10 15 500 750 -70 ns Min. Max. — — — — — — 70 80 10 15 500 750 Unit mA mA VCC = Max., Com. VIN = VIH or VIL, CE1 ≥ VIH, Ind. or CE2 ≤ VIL, f = 0 VCC = Max., Com. CE1 ≤ VCC – 0.2V, Ind. CE2 ≤ 0.2V, VIN > VCC – 0.2V, or VIN ≤ 0.2V, f = 0 ISB2 µA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 4 Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 IC62C1024AL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time (2) (2) Min. 35 — 3 — — — 0 0 3 3 0 -35 Max. — 35 — 35 35 10 — 10 — — 10 -45 Min. Max. 45 — 3 — — — 0 0 5 5 0 — 45 — 45 45 20 — 15 — — 15 Min. 55 — 3 — — — 0 0 7 7 0 -55 Max. — 55 — 55 55 25 — 20 — — 20 Min. 70 — 3 — — — 0 0 10 10 0 -70 Max. — 70 — 70 70 35 — 25 — — 25 Unit ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE1 tACE2 tDOE tLZOE tHZOE OE to Low-Z Output OE to High-Z Output CE2 to Low-Z Output CE1 or CE2 to High-Z Output tLZCE1(2) CE1 to Low-Z Output tLZCE2 tHZCE (2) (2) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b AC TEST LOADS 480 Ω 5V 5V 480 Ω OUTPUT 100 pF Including jig and scope 255 Ω OUTPUT 5 pF Including jig and scope 255 Ω Figure 1a. Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 Figure 1b. 5 IC62C1024AL AC WAVEFORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tDOE tHZOE CE1 tACE1/tACE2 tLZOE CE2 tLZCE1/ tLZCE2 HIGH-Z tHZCE DATA VALID DOUT Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. 6 Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 IC62C1024AL WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power) Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time (4) Min. 35 25 25 25 0 0 25 20 0 — 3 -35 Max. — — — — — — — — — 10 — Min. 45 35 35 35 0 0 35 25 0 — 5 -45 Max. — — — — — — — — — 15 — Min. 55 50 50 45 0 0 40 25 0 — 5 -55 Max. — — — — — — — — — 20 — Min. 70 60 60 60 0 0 50 30 0 — 5 -70 Max. — — — — — — — — — 25 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE1 tSCE2 tAW tHA tSA tPWE tSD tHD tHZWE tLZWE (2) (2) WE Pulse Width Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) tWC ADDRESS tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) tSA tHZWE HIGH-Z WE tLZWE DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 7 IC62C1024AL WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2) tWC ADDRESS tSA tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE tLZWE HIGH-Z DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Vcc for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Test Condition See Data Retention Waveform Vcc = 3.0V, CE1 > Vcc – 0.2V See Data Retention Waveform See Data Retention Waveform Com. Ind. Min. 2.0 — — 0 Max. 5.5 250 400 — — Unit V µA ns ns VDR IDR tSDR tRDR tRC DATA RETENTION WAVEFORM (CE1 Controlled) tSDR VCC Data Retention Mode tRDR 5.0V 3.0V VDR CE1 ≥ VCC - 0.2V CE1 GND 8 Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 IC62C1024AL DATA RETENTION WAVEFORM (CE2 Controlled) Data Retention Mode VCC tSDR tRDR 5.0V CE2 3.0V VDR 0.4V GND CE2 ≤ 0.2V ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) 35 35 35 45 45 45 55 55 55 70 70 70 Order Part No. Package ORDERING INFORMATION Industrial Range: –40°C to +85°C Speed (ns) 35 35 35 45 45 45 55 55 55 70 70 70 Order Part No. Package IC62C1024AL-35W 600mil DIP IC62C1024AL-35Q 450mil SOP IC62C1024AL-35T 8*20mm TSOP-1 IC62C1024AL-45W 600mil DIP IC62C1024AL-45Q 450mil SOP IC62C1024AL-45T 8*20mm TSOP-1 IC62C1024AL-55W 600mil DIP IC62C1024AL-55Q 450mil SOP IC62C1024AL-55T 8*20mm TSOP-1 IC62C1024AL-70W 600mil DIP IC62C1024AL-70Q 450mil SOP IC62C1024AL-70T 8*20mm TSOP-1 IC62C1024AL-35WI 600mil DIP IC62C1024AL-35QI 450mil SOP IC62C1024AL-35TI 8*20mm TSOP-1 IC62C1024AL-45WI 600mil DIP IC62C1024AL-45QI 450mil SOP IC62C1024AL-45TI 8*20mm TSOP-1 IC62C1024AL-55WI 600mil DIP IC62C1024AL-55QI 450mil SOP IC62C1024AL-55TI 8*20mm TSOP-1 IC62C1024AL-70WI 600mil DIP IC62C1024AL-70QI 450mil SOP IC62C1024AL-70TI 8*20mm TSOP-1 Integrated Circuit Solution Inc. HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 Fax: 886-3-5783000 BRANCH OFFICE: 7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 FAX: 886-2-26962252 http://www.icsi.com.tw Integrated Circuit Solution Inc. ALSR009-0A 5/7/2002 9