0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IC62LV12816LL-70TI

IC62LV12816LL-70TI

  • 厂商:

    ICSI

  • 封装:

  • 描述:

    IC62LV12816LL-70TI - 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM - Integrated Circuit Sol...

  • 数据手册
  • 价格&库存
IC62LV12816LL-70TI 数据手册
IC62LV12816L IC62LV12816LL IC62LV12816L IC62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM .EATURES • High-speed access times: 55, 70, 100 ns • CMOS low power operation -- 60 mW (typical) operating -- 3 µW (typical) CMOS standby • TTL compatible interface levels • Single 2.7V-3.6V Vcc power supply • .ully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP-2 and 48-pin 6*8mm T.-BGA DESCRIPTION The 1+51 IC62LV12816L and IC62LV12816LL are high-speed, 2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using Chip Enable Output and Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IC62LV12816L and IC62LV12816LL are packaged in the JEDEC standare 44-pin 400mil TSOP-2 and 48-pin 6*8mm T.-BGA. .UNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 1 IC62LV12816L IC62LV12816LL PIN CON.IGURATIONS 44-Pin TSOP-2 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 48-Pin T.-BGA 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 1 A B C D E F G H LB I/O8 I/O9 GND Vcc I/O14 I/O15 NC 2 OE UB I/O10 I/O11 I/O12 I/O13 NC A8 3 A0 A3 A5 NC NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 N/C I/O0 I/O2 Vcc GND I/O6 I/O7 NC PIN DESCRIPTIONS A0-A16 I/O0-I/O15 CE OE WE Address Inputs Data Input/Output Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (l/O0-I/O7) Upper-byte Control (l/O8-I/O15) No Connection Power Ground TRUTH TABLE Mode Not Selected WE CE H L L L L L L L L L OE X X H X L L L X X X LB X H X H L H L L H L UB X H X H H L L H L L I/O0/-I/O7 High-Z High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O PIN I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB, ISB ISB, ISB ICC ISB ICC X X Output Disabled H X Read H H H Write L L L ICC 2 Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 IC62LV12816L IC62LV12816LL OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VCC 2.7V - 3.6V 2.7V - 3.6V ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS VCC TSTG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Vcc related to GND Storage Temperature Power Dissipation Value –0.5 to Vcc + 0.5 –40 to +85 –0.3 to +4.0 –65 to +150 1.0 Unit V °C V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1 mA VCC = Min., IOL = 2.1 mA Min. 2.0 — 2.2 –0.2 –1 –1 Max. — 0.4 VCC + 0.2 0.4 1 1 Unit V V V V µA µA GND £ VIN £ VCC GND £ VOUT £ VCC, OUTPUTS DISABLED Notes: 1. VIL(min.) = –2.0V for pulse width less than 10 ns. CAPACITANCE(1) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit p. p. Notes: 1. Tested initially and after any design or process changes that may affect these parameters. Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 3 IC62LV12816L IC62LV12816LL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and .all Times Input and Output Timing and Reference Level Output Load Unit 0.4V to 2.2V 5 ns 1.3V See .igures 1 and 2 AC TEST LOADS 1 TTL OUTPUT 100 pF Including jig and scope OUTPUT 5 pF Including jig and scope 1 TTL .igure 1 .igure 2 IC62LV12816L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) OR ULB Control ISB CMOS Standby Current (CMOS Inputs) OR ULB Control Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL, CE £ VIH, f = 0 Com. Ind. Com. Ind. -55 Min. Max. — — — — 40 45 0.5 1.0 -70 Min. Max. — — — — 30 35 0.5 1.0 -100 Min. Max. — — — — 20 25 0.5 1.0 Unit mA mA VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH VCC = Max., CE ³ VCC – 0.2V, VIN ³ VCC – 0.2V, or VIN £ 0.2V, f = 0 Com. Ind. — — 35 50 — — 35 50 — — 35 50 µA VCC = Max., CE = VIL VIN £ 0.2V, f = 0, UB / LB = VCC – 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 4 Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 IC62LV12816L IC62LV12816LL IC62LV12816LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC ISB Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) OR ULB Control ISB CMOS Standby Current (CMOS Inputs) OR ULB Control Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL, CE ³ VIH, f = 0 Com. Ind. Com. Ind. -55 Min. Max. — — — — 40 45 0.5 1.0 -70 Min. Max. — — — — 30 35 0.5 1.0 -100 Min. Max. — — — — 20 25 0.5 1.0 Unit mA mA VCC = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH VCC = Max., f = 0 CE ³ VCC – 0.2V, VIN ³ VCC – 0.2V, or VIN £ 0.2V, f = 0 Com. Ind. — — 10 15 — — 10 15 — — 10 15 µA VCC = Max., CE = VIL VIN £ 0.2V, f = 0, UB / LB = VCC – 0.2V Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time  Min. 55 — 10 — — — 5 0 10 — 0 0 -55 Max. — 55 — 55 30 20 — 20 — 55 25 — Min. 70 — 10 — — — 5 0 10 — 0 0 -70 Max. — 70 — 70 35 25 — 25 — 70 25 — -100 Min. Max. 100 — 15 — — — 5 0 10 — 0 0 — 100 — 100 50 30 — 30 — 100 35 — Unit ns ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE tDOE tHZOE tLZOE  OE to High-Z Output OE to Low-Z Output tHZCE  CE to High-Z Output tLZCE  CE to Low-Z Output tBA tHZB tLZB LB, UB Access Time LB, UB o High-Z Output LB. UB to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in .igure 1. 2. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 5 IC62LV12816L IC62LV12816LL AC TEST LOADS READ CYCLE NO.1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT PREVIOUS DATA VALID AC WAVE.ORMS READ CYCLE NO. 2(1,3) (CS, OE, AND UB/LB Controlled) tRC ADDRESS tAA tOHA OE tDOE tHZOE CE tLZCE tLZOE tACE tHZCE LB, UB tBA tHZB DATA VALID DOUT HIGH-Z tLZB Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. 6 Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 IC62LV12816L IC62LV12816LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time LB, UB Valid to End of Write WE Pulse Width Data Setup to Write End Data Hold from Write End ! Min. 55 50 50 0 0 45 40 25 0 — 5 -55 Max. — — — — — — — — — 30 — Min. 70 65 65 0 0 60 40 30 0 — 5 -70 Max. — — — — — — — — — 30 — -100 Min. Max 100 80 80 0 0 80 80 40 0 — 5 — — — — — — — — — 40 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE tAW tHA tSA tPWB tPWE" tSD tHD tHZWE WE LOW to High-Z Output tLZWE! WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and output loading specified in .igure 1. 2. The internal write time is defined by the overlap of CE LOW, and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 3. Tested with the load in .igure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 4. Tested with OE HIGH AC WAVE.ORMS WRITE CYCLE NO. 1(1,2) (CS, Controlled, OE = HIGH or LOW) t WC ADDRESS VALID ADDRESS t SA CS t SCS t HA WE t AW t PWE1 t PWE2 t PWB UB, LB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CS) [ (LB) = (UB) ] (WE). Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 7 IC62LV12816L IC62LV12816LL WRITE CYCLE NO. 2 (WE Controlled; OE is HIGH During Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CS LOW t AW t PWE1 WE t SA UB, LB t PWB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID WRITE CYCLE NO. 3 (WE Controlled; OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE CE LOW t HA LOW t AW t PWE2 WE t SA UB, LB t PWB t HZWE DOUT DATA UNDEFINED HIGH-Z t LZWE t SD DIN t HD DATAIN VALID 8 Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 IC62LV12816L IC62LV12816LL WRITE CYCLE NO. 4 (UB / LB Controlled) t WC ADDRESS ADDRESS 1 t WC ADDRESS 2 OE t SA CS LOW WE t HA t SA t PWB t PWB WORD 2 t HA UB, LB WORD 1 t HZWE DOUT HIGH-Z t LZWE t HD DATAIN VALID DATA UNDEFINED t SD DIN t SD DATAIN VALID t HD DATA RETENTION SWITCHING CHARACTERISTICS (L/LL) Symbol Parameter Vcc for Data Retention Data Retention Current Test Condition See Data Retention Waveform Vcc = 2.0V, CE ³ Vcc – 0.2V Com. (-L) Com. (-LL) Ind. (-L) Ind. (-LL) Min. 1.5 — — — — 0 Max. 3.6 20 5 25 7 — — Unit V µA µA µA µA ns ns VDR IDR tSDR tRDR Data Retention Setup Time Recovery Time See Data Retention Waveform See Data Retention Waveform (CE Controlled) Data Retention Mode tRC DATA RETENTION WAVE.ORM tSDR VCC 2.7V tRDR 2.2V VDR CE ≥ VCC - 0.2V CE GND Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001 9 IC62LV12816L IC62LV12816LL ORDERING IN.ORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 55 70 100 IC62LV12816L-55T IC62LV12816L-55B IC62LV12816L-70T IC62LV12816L-70B IC62LV12816L-100T IC62LV12816L-100B Package 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 55 70 100 IC62LV12816L-55TI IC62LV12816L-55BI IC62LV12816L-70TI IC62LV12816L-70BI IC62LV12816L-100TI IC62LV12816L-100BI Package 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA ORDERING IN.ORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 55 70 100 IC62LV12816LL-55T IC62LV12816LL-55B IC62LV12816LL-70T IC62LV12816LL-70B IC62LV12816LL-100T IC62LV12816LL-100B Package 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 55 70 100 IC62LV12816LL-55TI IC62LV12816LL-55BI IC62LV12816LL-70TI IC62LV12816LL-70BI IC62LV12816LL-100TI IC62LV12816LL-100BI Package 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA 400mil TSOP-2 6*8mm T.-BGA HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 .ax: 886-3-5783000 Integrated Circuit Solution Inc. BRANCH O..ICE: 7., NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 .AX: 886-2-26962252 http://www.icsi.com.tw 10 Integrated Circuit Solution Inc. LPSR011-0B 06/06/2001
IC62LV12816LL-70TI 价格&库存

很抱歉,暂时无法提供与“IC62LV12816LL-70TI”相匹配的价格&库存,您可以联系我们找货

免费人工找货