83905AMLF

Low Skew, 1:6 Crystal-to- LVCMOS/LVTTL Fanout Buffer ICS83905 DATA SHEET General Description The ICS83905 is a low skew, 1-to-6 LVCMOS / LVTTL Fanout Buffer and a member of the HiPerClockS™ HiPerClockS™ family of High Performance Clock Solutions from IDT. The low impedance LVCMOS/LVTTL outputs are designed to drive 50Ω series or parallel terminated transmission lines. The effective fanout can be increased from 6 to 12 by utilizing the ability of the outputs to drive two series terminated lines. Features • • • • • • Six LVCMOS / LVTTL outputs Outputs able to drive 12 series terminated lines Crystal Oscillator Interface Crystal input frequency range: 10MHz to 40MHz Output skew: 80ps (maximum) RMS phase jitter @ 25MHz, (100Hz – 1MHz): 0.26ps (typical), VDD = VDDO = 2.5V Offset Noise Power 100Hz.................-129.7 dBc/Hz 1kHz ...................-144.4 dBc/Hz 10kHz .................-147.3 dBc/Hz 100kHz ...............-157.3 dBc/Hz ICS The ICS83905 is characterized at full 3.3V, 2.5V, and 1.8V, mixed 3.3V/2.5V, 3.3V/1.8V and 2.5V/1.8V output operating supply mode. Guaranteed output and part-to-part skew characteristics along with the 1.8V output capabilities makes the ICS83905 ideal for high performance, single ended applications that also require a limited output voltage. • • • 5V tolerant enable inputs Synchronous output enables Operating power supply modes: Full 3.3V, 2.5V, 1.8V Mixed 3.3V core/2.5V output operating supply Mixed 3.3V core/1.8V output operating supply Mixed 2.5V core/1.8V output operating supply 0°C to 70°C ambient operating temperature Available in both standard (RoHS 5) and lead-free (RoHS 6) packages XTAL_OUT ENABLE2 ENABLE1 XTAL_IN Pin Assignments ICS83905 20-Lead VFQFN 4mm x 4mm x 0.925mm package body K Package Top View 20 19 18 17 16 GND 1 GND 2 BCLK0 3 VDDO 4 BCLK1 5 6 GND • • 15 BCLK5 14 VDDO 13 BCLK4 12 GND 11 GND 7 GND 8 BCLK2 9 10 BCLK3 VDD nc Block Diagram BCLK0 XTAL_OUT ENABLE2 GND BCLK0 VDDO BCLK1 GND BCLK2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 XTAL_IN ENABLE1 BCLK5 VDDO BCLK4 GND BCLK3 VDD BCLK1 XTAL_IN BCLK2 XTAL_OUT ICS83905 16-Lead SOIC, 150 Mil 3.9mm x 9.9mm x 1.38mm package body M Package Top View 16-Lead TSSOP 4.4mm x 5.0mm x 0.925mm package body G Package Top View BCLK3 BCLK4 ENABLE 1 SYNCHRONIZE BCLK5 ENABLE 2 SYNCHRONIZE ICS83905AM REVISION B JULY 20, 2009 1 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Table 1. Pin Descriptions Name XTAL_OUT XTAL_IN ENABLE1, ENABLE2 BCLK0, BCLK1, BCLK2, BCLK3, BCLK4, BCLK5 GND VDD VDDO nc Type Output Input Input Output Power Power Power Unused Description Crystal oscillator interface. XTAL_OUT is the output. Crystal oscillator interface. XTAL_IN is the input. Clock enable. LVCMOS/LVTTL interface levels. See Table 3. Clock outputs. LVCMOS/LVTTL interface levels. Power supply ground. Power supply pin. Output supply pin. No connect. Table 2. Pin Characteristics Symbol CIN Parameter Input Capacitance VDDO = 3.465V CPD Power Dissipation Capacitance (per output) VDDO = 2.625V VDDO = 2.0V VDDO = 3.3V ± 5% ROUT Output Impedance VDDO = 2.5V ± 5% VDDO = 1.8V ± 0.2V 7 7 10 Test Conditions Minimum Typical 4 19 18 16 Maximum Units pF pF pF pF Ω Ω Ω Function Table Table 3. Clock Enable Function Table Control Inputs ENABLE 1 0 0 1 1 ENABLE2 0 1 0 1 Outputs BCLK[0:4] LOW LOW Toggling Toggling BCLK5 LOW Toggling LOW Toggling BCLK5 BCLK0:4 ENABLE2 ENABLE1 Figure 1. Enable Timing Diagram ICS83905AM REVISION B JULY 20, 2009 2 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Supply Voltage, VDD Inputs, VI Outputs, VO Package Thermal Impedance, θJA 16 Lead SOIC package 16 Lead TSSOP package 20 Lead VFQFN package Storage Temperature, TSTG Rating 4.6V -0.5V to VDD + 0.5V -0.5V to VDDO+ 0.5V 78.8°C/W (0 mps) 100.3°C/W (0 mps) 57.5°C/W (0 mps) -65°C to 150°C DC Electrical Characteristics Table 4A. Power Supply DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 3.135 3.135 Typical 3.3 3.3 Maximum 3.465 3.465 10 5 Units V V mA mA Table 4B. Power Supply DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 2.375 2.375 Typical 2.5 2.5 Maximum 2.625 2.625 8 4 Units V V mA mA Table 4C. Power Supply DC Characteristics, VDD = VDDO = 1.8V ± 0.2V, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 1.6 1.6 Typical 1.8 1.8 Maximum 2.0 2.0 5 3 Units V V mA mA ICS83905AM REVISION B JULY 20, 2009 3 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Table 4D. Power Supply DC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 3.135 2.375 Typical 3.3 2.5 Maximum 3.465 2.625 10 4 Units V V mA mA Table 4E. Power Supply DC Characteristics, 3.3V ± 5%, VDDO = 1.8V ± 0.2V%, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 3.135 1.6 Typical 3.3 1.8 Maximum 3.465 2.0 10 3 Units V V mA mA Table 4F. Power Supply DC Characteristics, VDD = 2.5V ± 5%, VDDO = 1.8V ± 0.2V%, TA = 0°C to 70°C Symbol VDD VDDO IDD IDDO Parameter Power Supply Voltage Output Supply Voltage Power Supply Current Output Supply Current ENABLE [1:2] = 00 ENABLE [1:2] = 00 Test Conditions Minimum 2.375 1.6 Typical 2.5 1.8 Maximum 2.625 2.0 8 3 Units V V mA mA ICS83905AM REVISION B JULY 20, 2009 4 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Table 4G. LVCMOS/LVTTL DC Characteristics, TA = 0°C to 70°C Symbol Parameter ENABLE1, ENABLE2 Test Conditions VDD = 3.3V ± 5% VIH Input High Voltage VDD = 2.5V ± 5% VDD = 1.8V ± 0.2V VDD = 3.3V ± 5% VIL Input Low Voltage ENABLE1, ENABLE2 VDD = 2.5V ± 5% VDD = 1.8V ± 0.2V VDDO = 3.3V ± 5%; NOTE 1 VOH Output High Voltage VDDO = 2.5V ± 5%; IOH = -1mA VDDO = 2.5V ± 5%; NOTE 1 VDDO = 1.8V ± 0.2V; NOTE 1 VDDO = 3.3V ± 5%; NOTE 1 VOL Output Low Voltage; NOTE 1 VDDO = 2.5V ± 5%; IOL = 1mA VDDO = 2.5V ± 5%; NOTE 1 VDDO = 1.8V ± 0.2V; NOTE 1 Minimum 2 1.7 0.65 * VDD -0.3 -0.3 -0.3 2.6 2.0 1.8 VDDO - 0.3 0.5 0.4 0.45 0.35 V V V Typical Maximum VDD + 0.3 VDD + 0.3 VDD + 0.3 0.8 0.7 0.35 * VDD Units V V V V V V V V V NOTE 1: Outputs terminated with 50Ω to VDDO/2. See Parameter Measurement Information, Output Load Test Circuit diagrams. Table 5. Crystal Characteristics Parameter Mode of Oscillation Frequency Equivalent Series Resistance (ESR) Shunt Capacitance Drive Level 10 Test Conditions Minimum Typical Fundamental 40 50 7 1 MHz Maximum Units Ω pF mW ICS83905AM REVISION B JULY 20, 2009 5 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER AC Electrical Characteristics Table 6A. AC Characteristics, VDD = VDDO = 3.3V ± 5%,TA = 0°C to 70°C Symbol fMAX tsk(o) tjit(Ø) tR / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 200 48 ENABLE1 ENABLE2 ENABLE1 ENABLE2 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.13 800 52 4 4 4 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random); NOTE 4 Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 5 Output Disable Time; NOTE 5 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: See phase noise plot. NOTE 5: These parameters are guaranteed by characterization. Not tested in production. Table 6B. AC Characteristics, VDD = VDDO = 2.5V ± 5%,TA = 0°C to 70°C Symbol fMAX tsk(o) tjit tR / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 200 47 ENABLE1 ENABLE2 ENABLE1 ENABLE2 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.26 800 53 4 4 4 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random); NOTE 4 Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 5 Output Disable Time; NOTE 5 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: See phase noise plot. NOTE 5: These parameters are guaranteed by characterization. Not tested in production. ICS83905AM REVISION B JULY 20, 2009 6 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Table 6C. AC Characteristics, VDD = VDDO = 1.8V ± 0.2V,TA = 0°C to 70°C Symbol fMAX tsk(o) tjit(Ø) tR / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 200 47 ENABLE1 ENABLE2 ENABLE1 ENABLE2 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.27 900 53 4 4 4 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random) Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 4 Output Disable Time; NOTE 4 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.. NOTE 4: These parameters are guaranteed by characterization. Not tested in production. Table 6D. AC Characteristics, VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%,TA = 0°C to 70°C Symbol fMAX tsk(o) tjit tR / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 48 200 ENABLE1 ENABLE2 ENABLE1 ENABLE2 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.14 52 800 4 4 4 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random) Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 4 Output Disable Time; NOTE 4 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: These parameters are guaranteed by characterization. Not tested in production. ICS83905AM REVISION B JULY 20, 2009 7 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Table 6E. AC Characteristics, VDD = 3.3V ± 5%, VDDO = 1.8V ± 0.2V,TA = 0°C to 70°C Symbol fMAX tsk(o) tjit t R / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 200 48 ENABLE1 ENABLE2 ENABLE1 ENABLE2 4 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.18 900 52 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random) Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 4 Output Disable Time; NOTE 4 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.. NOTE 4: These parameters are guaranteed by characterization. Not tested in production. Table 6F. AC Characteristics, VDD = 2.5V ± 5%, VDDO = 1.8V ± 0.2V, TA = 0°C to 70°C Symbol fMAX tsk(o) tjit t R / tF odc tEN tDIS Parameter Using External Crystal Output Frequency Using External Clock Source NOTE 1 25MHz, Integration Range: 100Hz – 1MHz 20% to 80% 200 47 ENABLE1 ENABLE2 ENABLE1 ENABLE2 Test Conditions Minimum 10 DC Typical Maximum 40 100 80 0.19 900 53 4 4 4 4 Units MHz MHz ps ps ps % cycles cycles cycles cycles Output Skew; NOTE 2, 3 RMS Phase Jitter (Random) Output Rise/Fall Time Output Duty Cycle Output Enable Time; NOTE 4 Output Disable Time; NOTE 4 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. All parameters measured at ƒ ≤ fMAX using a crystal input unless noted otherwise. Terminated at 50Ω to VDDO/2. NOTE 1: XTAL_IN can be overdriven relative to a signal a crystal would provide. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO/2. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: These parameters are guaranteed by characterization. Not tested in production. ICS83905AM REVISION B JULY 20, 2009 8 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Typical Phase Noise at 25MHz (2.5V Core/2.5V Output) 25MHz RMS Phase Jitter (Random) 100Hz to 1MHz = 0.26ps (typical) Noise Power dBc Hz Offset Frequency (Hz) Typical Phase Noise at 25MHz (3.3VCore/3.3V Output) ➝ Raw Phase Noise Data .25MHz RMS Phase Jitter (Random) 100Hz to 1MHz = 0.13ps (typical) Noise Power dBc Hz Offset Frequency (Hz) ICS83905AM REVISION B JULY 20, 2009 9 ©2009 Integrated Device Technology, Inc. ➝ Raw Phase Noise Data ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Parameter Measurement Information 1.65V±5% 1.25V±5% VDD, VDDO SCOPE Qx VDD, VDDO SCOPE Qx LVCMOS GND LVCMOS GND -1.65V±5% -1.25±5% 3.3V Core/3.3V LVCMOS Output Load AC Test Circuit 2.5V Core/2.5V LVCMOS Output Load AC Test Circuit 0.9V±0.1V 2.05V±5% 1.25V±5% VDD, VDDO SCOPE Qx VDD VDDO SCOPE Qx LVCMOS GND GND LVCMOS -0.9V±0.1V -1.25±5% 1.8V Core/1.8V LVCMOS Output Load AC Test Circuit 3.3V Core/2.5V LVCMOS Output Load AC Test Circuit 2.4V±0.9V 0.9V±0.1V 1.6V±0.025% 0.9V±0.1V VDD VDDO SCOPE Qx VDD VDDO SCOPE Qx GND GND LVCMOS LVCMOS -0.9V±0.1V -0.9V±0.1V 3.31.8V Core/1.8V LVCMOS Output Load AC Test Circuit 2.5V Core/1.8V LVCMOS Output Load AC Test Circuit ICS83905AM REVISION B JULY 20, 2009 10 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Parameter Measurement Information, continued Phase Noise Plot Noise Power Qx VCCO 2 Phase Noise Mask Qy VCCO 2 t sk(b) f1 Offset Frequency f2 RMS Jitter = Area Under the Masked Phase Noise Plot Output Skew RMS Phase Jitter V BCLK[0:5] DD 2 80% 20% tR 80% 20% tF t PW t PERIOD BCLK[0:5] odc = t PW t PERIOD x 100% Output Rise/Fall Time Output Duty Cycle/Pulse Width/Period ICS83905AM REVISION B JULY 20, 2009 11 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Application Information Crystal Input Interface Figure 2 shows an example of ICS83905 crystal interface with a parallel resonant crystal. The frequency accuracy can be fine tuned by adjusting the C1 and C2 values. For a parallel crystal with loading capacitance CL = 18pF, to start with, we suggest C1 = 15pF and C2 = 15pF. These values may be slightly fine tuned further to optimize the frequency accuracy for different board layouts. Slightly increasing the C1 and C2 values will slightly reduce the frequency. Slightly decreasing the C1 and C2 values will slightly increase the frequency. For the oscillator circuit below, R1 can be used, but is not required. For new designs, it is recommended that R1 not be used. XTAL_IN C1 15p X1 18pF Parallel Crystal 0 XTAL_OUT C2 15p R1 (optional) Figure 2. Crystal Input Interface LVCMOS to XTAL Interface The XTAL_IN input can accept a single-ended LVCMOS signal through an AC coupling capacitor. A general interface diagram is shown in Figure 3. The XTAL_OUT pin can be left floating. The input edge rate can be as slow as 10ns. For LVCMOS inputs, it is recommended that the amplitude be reduced from full swing to half swing in order to prevent signal interference with the power rail and to reduce noise. This configuration requires that the output impedance of the driver (Ro) plus the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50Ω applications, R1 and R2 can be 100Ω. This can also be accomplished by removing R1 and making R2 50Ω. By overdriving the crystal oscillator, the device will be functional, but note, the device performance is guaranteed by using a quartz crystal. VCC VCC R1 Ro Rs 50Ω 0.1µf XTAL_IN Zo = Ro + Rs R2 XTAL_OUT Figure 3. General Diagram for LVCMOS Driver to XTAL Input Interface ICS83905AM REVISION B JULY 20, 2009 12 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER VFQFN EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 4. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, please refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadframe Base Package, Amkor Technology. PIN SOLDER EXPOSED HEAT SLUG SOLDER PIN PIN PAD GROUND PLANE THERMAL VIA LAND PATTERN (GROUND PAD) PIN PAD Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale) Recommendations for Unused Input and Output Pins Inputs: LVCMOS Control Pins All control pins have internal pull-ups or pull-downs; additional resistance is not required but can be added for additional protection. A 1kΩ resistor can be used. Outputs: LVCMOS Outputs All unused LVCMOS output can be left floating. There should be no trace attached. ICS83905AM REVISION B JULY 20, 2009 13 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Layout Guideline Figure 5 shows an example of ICS83905 applications schematic. In this example, the device is operated at VDD = 3.3V and VDDO = 3.3V. The decoupling capacitors should be loacted as close as possible to the power pins. The input is driven by an 18pF load resonant quartz crystal. The tuning capacitors (C1, C2) are fairly accurate, but minor adjustments might be required. For the LVCMOS output drivers, two termination examples are shown in the schematic. For additonal termination, examples are shown in the LVCMOS Termination Applications Note. VDDO = 3.3V VDD = 3.3V CL = 18 pf C2 15pf U1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 C1 15pF R2 31 Zo = 50 Ohm LVCMOS ENABLE 2 VDDO XTAL_OUT ENABLE 2 GND BCLK0 VDDO BCLK1 GND BCLK2 XTAL_IN ENABLE 1 BCLK5 VDDO BCLK4 GND BCLK3 VDD ENABLE 1 VDD R3 100 Zo = 50 Ohm ICS83905I R4 100 LVCMOS VDD C3 10uF C4 .1uF VDDO C5 .1uF C6 .1uF Optional Termination Unused outputs can be left floating. There should be no trace attached to unused outputs. Device characterized and specification limits set with all outputs terminated. Figure 5. Schmatic of Recommended Layout ICS83905AM REVISION B JULY 20, 2009 14 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Power Considerations This section provides information on power dissipation and junction temperature for the ICS83905. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS83905 is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. • • • • Power (core)MAX = VDD_MAX * (IDD + IDDO) = 3.465V *(10mA + 5mA) = 51.9mW Output Impedance ROUT Power Dissipation due to Loading 50Ω to VDD/2 Output Current IOUT = VDD_MAX / [2 * (50Ω + ROUT)] = 3.465V / [2 * (50Ω + 7Ω)] = 30.4mA Power Dissipation on the ROUT per LVCMOS output Power (ROUT) = ROUT * (IOUT)2 = 7Ω * (30.4mA)2 = 6.5mW per output Total Power Dissipation on the ROUT Total Power (ROUT) = 6.5mW * 6 = 39mW Dynamic Power Dissipation at 25MHz Power (25MHz) = CPD * Frequency * (VDD)2 = 19pF * 25MHz * (3.465V)2 = 5.70mW per output Total Power (25MHz) = 5.70mW * 6 = 34.2mW Total Power Dissipation • Total Power = Power (core)MAX + Total Power (ROUT) + Total Power (25MHz) = 51.98mW + 39mW + 34.2mW = 125.1mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiPerClockS devices is 125°C. The equation for Tj is as follows: Tj = θJA * Pd_total + TA Tj = Junction Temperature θJA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θJA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 100.3°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 70°C with all outputs switching is: 70°C + 0.125W *100.3°C/W = 82.5°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 7. Thermal Resistance θJA for 16 Lead TSSOP, Forced Convection θJA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 100.3°C/W 1 96.0°C/W 2.5 93.9°C/W ICS83905AM REVISION B JULY 20, 2009 15 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Reliability Information Table 8A. θJA vs. Air Flow Table for a 16 Lead TSSOP θJA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 100.3°C/W 1 96.0°C/W 2.5 93.9°C/W Table 8B. θJA vs. Air Flow Table for a 16 Lead SOIC θJA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 78.8°C/W 1 71.1°C/W 2.5 66.2°C/W Table 8C. θJA vs. Air Flow Table for a 20 Lead VFQFN θJA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 57.5°C/W 1 50.3°C/W 2.5 45.1°C/W Transistor Count The transistor count for ICS83905: 339 Pin compatible to MPC905 ICS83905AM REVISION B JULY 20, 2009 16 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Package Outline and Package Dimensions Package Outline - G Suffix for 16 Lead TSSOP Package Outline - M Suffix for 16 Lead SOIC Table 9A. Package Dimensions for 16 Lead TSSOP All Dimensions in Millimeters Symbol Minimum Maximum N 16 A 1.20 A1 0.5 0.15 A2 0.80 1.05 b 0.19 0.30 c 0.09 0.20 D 4.90 5.10 E 6.40 Basic E1 4.30 4.50 e 0.65 Basic L 0.45 0.75 α 0° 8° aaa 0.10 Reference Document: JEDEC Publication 95, MO-153 Table 9B. Package Dimensions for 16 Lead SOIC All Dimensions in Millimeters Symbol Minimum Maximum N 16 A 1.35 1.75 A1 0.10 0.25 B 0.33 0.51 C 0.19 0.25 D 9.80 10.00 E 3.80 4.00 e 1.27 Basic H 5.80 6.20 h 0.25 0.50 L 0.40 1.27 α 0° 8° Reference Document: JEDEC Publication 95, MS-012 ICS83905AM REVISION B JULY 20, 2009 17 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Package Outline and Package Dimensions Package Outline - K Suffix for 32 Lead VFQFN S eating Plan e Ind ex Area N Anvil Singula tion A1 A3 L N 1 2 E2 (N -1)x e E2 2 (Re f.) (Ref.) (N -1)x e (R ef.) N &N Even e (Ty p.) 2 If N & N are Even OR To p View b A D Chamfer 4x 0.6 x 0.6 max OPTIONAL 0. 08 C C device. The pin count and pinout are shown on the front page. The package dimensions are in Table 9C below. (Ref.) e D2 2 D2 N &N Odd Th er mal Ba se NOTE: The following package mechanical drawing is a generic drawing that applies to any pin count VFQFN package. This drawing is not intended to convey the actual pin count or pin layout of this Table 9C. Package Dimensions JEDEC Variation: VGGD-1/-5 All Dimensions in Millimeters Symbol Minimum Nominal Maximum N 20 A 0.80 1.00 A1 0 0.05 A3 0.25 Ref. b 0.18 0.30 5 ND & NE D&E 4.00 Basic D2 & E2 1.95 2.25 e 0.50 Basic L 0.35 0.75 Reference Document: JEDEC Publication 95, MO-220 ICS83905AM REVISION B JULY 20, 2009 18 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Ordering Information Table 10. Ordering Information Part/Order Number 83905AM 83905AMT 83905AMLF 83905AMLFT 83905AG 83905AGT 83905AGLF 83905AGLFT 83905AK 83905AKT 83905AKLF 83905AKLFT Marking 83905AM 83905AM 83905AML 83905AML 83905AG 83905AG 83905AGL 83905AGL 83905A 83905A 3905AL 3905AL Package 16 Lead SOIC 16 Lead SOIC “Lead-Free” 16 Lead SOIC “Lead-Free” 16 Lead SOIC 16 Lead TSSOP 16 Lead TSSOP “Lead-Free” 16 Lead TSSOP “Lead-Free” 16 Lead TSSOP 20 Lead VFQFN 20 Lead VFQFN “Lead-Free” 20 Lead VFQFN “Lead-Free” 20 Lead VFQFN Shipping Packaging Tube 2500 Tape & Reel Tube 2500 Tape & Reel Tube 2500 Tape & Reel Tube 2500 Tape & Reel Tray 2500 Tape & Reel Tray 2500 Tape & Reel Temperature 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C 0°C to 70°C NOTE: Parts that are ordered with an "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications, such as those requiring extended temperature ranges, high reliability or other extraordinary environmental requirements are not recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. ICS83905AM REVISION B JULY 20, 2009 19 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER Revision History Sheet Rev A B B B T6A - T6F T9 Table Page 2 1 5-7 8 14 11 12 3 11 13 11 12 17 3 12 14 16 15 Description of Change Added Enable Timing Diagram. Features Section - added RMS Phase Jitter bullet. AC Characteristics Tables - added RMS Phase Jitter specs. Added Phase Noise Plot. Ordering Information Table - added TSSOP, non-LF part number. Added Crystal Input Interface in Application Section. Added Schematic layout. Absolute Maximum Ratings - corrected 20 lead VFQFN package Thermal Impedance. Added Recommendations for Unused Input and Output Pins. Corrected Theta JA Air Flow Table for 20 lead VFQFN. Added LVCMOS to XTAL Interface section. Added Thermal Release Path section. AC Characteristics Table - added lead-free marking for 20 lead VFQFN package. Absolute Maximum Ratings - updated TSSOP and VFQFN Thermal Impedance. Updated Thermal Release Path section. Updated TSSOP and VFQFN Thermal Impedance. Added note to VFQFN Package Outline. Added Power Considerations section. Converted datasheet format. Date 3/28/05 4/8/05 4/25/05 5/16/05 B 10/2/06 B T9 7/9/07 B T7B - T7C 1/24/08 B 7/20/09 ICS83905AM REVISION B JULY 20, 2009 20 ©2009 Integrated Device Technology, Inc. ICS83905 Data Sheet LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER 6024 Silver Creek Valley Road San Jose, California 95138 Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com/go/contactIDT Technical Support netcom@idt.com +480-763-2056 DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright 2009. All rights reserved.